SQW33N65EF-GE3

SQW33N65EF www.vishay.com Vishay Siliconix E Series Power MOSFET With Fast Body Diode FEATURES D • Fast body diode MOSFET using E series technology TO-247AD • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg G • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr G D S S • 175 °C operating temperature • AEC-Q101 qualified N-Channel MOSFET • Ultra low gate charge (Qg) PRODUCT SUMMARY • Avalanche energy rated (UIS) VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 700 VGS = 10 V 0.095 Qg typ. (nC) 115 Qgs (nC) 26 APPLICATIONS Qgd (nC) 44 • Automotive onboard charger Single • Automotive DC/DC converter Configuration ORDERING INFORMATION Package TO-247AD Lead (Pb)-free and halogen-free SQW33N65EF-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 650 Gate-source voltage VGS ± 30 Continuous drain current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed drain current a ID UNIT V 34 24 A IDM 95 2.5 W/°C Single pulse avalanche energy b EAS 508 mJ Maximum power dissipation PD 375 W TJ, Tstg -55 to +175 °C Linear derating factor Operating junction and storage temperature range Drain-source voltage slope Reverse diode dV/dt dV/dt d Soldering recommendations (peak temperature) c For 10 s 100 50 260 V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 6.0 A c. 1.6 mm from case d. ISD ≤ ID, dI/dt = 160 A/μs, starting TJ = 25 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 40 Maximum junction-to-case (drain) RthJC - 0.4 S21-0365-Rev. A, 26-Apr-2021 UNIT °C/W Document Number: 92382 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQW33N65EF www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage (N) Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance Forward transconductance a VDS VGS = 0 V, ID = 250 μA 650 - - V ΔVDS/TJ Reference to 25 °C, ID = 10 mA - 0.69 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V VGS = ± 20 V - - ± 100 nA μA IGSS IDSS VGS = ± 30 V - - ±1 VDS = 520 V, VGS = 0 V - - 1 VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 500 μA - 0.095 0.109 Ω gfs VDS = 30 V, ID = 16.5 A - 13 - S VGS = 0 V, VDS = 100 V, f = 1 MHz - 3972 - - 163 - - 5 - - 117 - RDS(on) VGS = 10 V ID = 16.5 A Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Effective output capacitance, energy related a Co(er) Effective output capacitance, time related b Co(tr) - 482 - Qg - 115 173 Total gate charge Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time tf Gate input resistance Rg VGS = 0 V, VDS = 0 V to 520 V VGS = 10 V ID = 16.5 A, VDS = 520 V - 26 - - 44 - - 32 64 pF nC VDD = 520 V, ID = 16.5 A Rg = 9.1 Ω, VGS = 10 V - 51 77 - 134 201 - 62 93 f = 1 MHz, open drain 0.4 0.9 1.8 - - 34 S - - 95 TJ = 25 °C, IS = 16.5 A, VGS = 0 V - 0.9 1.2 V - 178 356 ns - 1.4 2.8 μC - 17 - A ns Ω Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current ISM Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IF = IS = 16.5 A, dI/dt = 100 A/μs, VR = 400 V Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS b. Coss(tr) is a fixed capacitance that gives the charging time as Coss while VDS is rising from 0 % to 80 % VDS S21-0365-Rev. A, 26-Apr-2021 Document Number: 92382 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQW33N65EF www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 1000 7V 40 100 6V 20 5V 10 0 0 5 10 15 3.0 2.5 1000 2.0 VGS = 10 V 1.5 100 1.0 0.5 10 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 20 VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Axis Title Axis Title 10000 15 V 14 V 13 V 12 V 11 V 10 V 9V 10 000 7V 6V 1000 20 100 5V Ciss 1000 100 Crss 10 100 1 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd 10 0.1 10 0 5 10 15 10 0.01 0 20 100 200 300 400 500 600 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Axis Title Axis Title 24 10000 100 50 000 80 1000 1st line 2nd line 60 TJ = 175 °C 40 100 20 2nd line Coss - Output Capacitance (pF) TJ = 25 °C 2nd line ID - Drain-to-Source Current (A) 1000 Coss 1st line 2nd line 30 TJ = 175 °C 2nd line C - Capacitance (pF) 40 10000 100 000 1st line 2nd line 2nd line ID - Drain-to-Source Current (A) 50 0 1st line 2nd line 60 8V ID = 16.5 A 18 5000 Coss Eoss 12 500 6 VDS = 24 V 10 0 0 5 10 15 20 50 0 0 100 200 300 400 500 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 6 - Coss and Eoss vs. VDS S21-0365-Rev. A, 26-Apr-2021 Eoss - Output Capacitance Stored Energy (μJ) 2nd line 80 RDS(on) - Drain-to-Source On-Resistance (Normalized) TJ = 25 °C 15 V 14 V 13 V 12 V 11 V 10 V 9V 10000 3.5 1st line 2nd line 2nd line ID - Drain-to-Source Current (A) 100 600 Document Number: 92382 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQW33N65EF www.vishay.com Vishay Siliconix Axis Title Axis Title 40 9 1000 6 100 3 2nd line ID - Drain Current (A) VDS = 520 V VDS = 325 V VDS = 130 V 10 0 0 40 80 120 10000 30 1000 1st line 2nd line 10000 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 12 20 100 10 10 0 25 160 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TC - Case Temperature (°C) Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 10 - Maximum Drain Current vs. Case Temperature Axis Title TJ = 25 °C 100 1 VGS = 0 V 10 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10000 1.2 1.1 ID = 10 mA 1000 1st line 2nd line 1000 10 1st line 2nd line 2nd line ISD - Reverse Drain Current (A) TJ = 175 °C VDS - Drain-to-Source Breakdown Vpltage (normalized) Axis Title 10000 100 1.0 100 0.9 0.8 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) Fig. 8 - Typical Source-Drain Diode Forward Voltage Fig. 11 - Typical Drain-to-Source Voltage vs. Temperature Axis Title 10000 1000 Operation in this area limited by RDS(on) IDM limited BVDSS limited 1000 Limited by RDS(on) a 10 100 μs 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms 100 0.1 10 ms TC = 25 °C, TJ = 175 °C, single pulse 0.01 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) Fig. 9 - Maximum Safe Operating Area S21-0365-Rev. A, 26-Apr-2021 Document Number: 92382 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQW33N65EF www.vishay.com Vishay Siliconix Axis Title 1 10000 0.2 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 0.1 0.05 100 0.02 Single pulse 10 0.01 0.0001 0.001 0.01 0.1 1 Pulse Time (s) Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case RD VDS VDS tp VGS VDD D.U.T. RG + - VDD VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % IAS Fig. 16 - Unclamped Inductive Waveforms Fig. 13 - Switching Time Test Circuit VDS QG 10 V 90 % QGS 10 % VGS QGD VG td(on) td(off) tf tr Charge Fig. 14 - Switching Time Waveforms Fig. 17 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. L Vary tp to obtain required IAS VDS 50 kΩ 12 V D.U.T RG - IAS 10 V tp + 0.01 Ω 0.2 µF 0.3 µF V DD + D.U.T. - VDS VGS 3 mA Fig. 15 - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S21-0365-Rev. A, 26-Apr-2021 Document Number: 92382 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQW33N65EF www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?92382. S21-0365-Rev. A, 26-Apr-2021 Document Number: 92382 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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