SS10PH10HM3_A/H

SS10PH10HM3_A/H

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO-277

  • 描述:

    特性:极低的外形:典型高度为1.1mm。 适合自动贴装。 有保护环用于过压保护。 采用高势垒技术,最高结温T_J = 175℃。 低泄漏电流。 符合MSL 1级标准(根据J-STD-020)。应用:开...

  • 详情介绍
  • 数据手册
  • 价格&库存
SS10PH10HM3_A/H 数据手册
SS10PH9, SS10PH10 www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount High Voltage Schottky Rectifiers FEATURES eSMP® Series • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement K • Guardring for overvoltage protection • High barrier technology, TJ = 175 °C maximum 1 • Low leakage current 2 • Meets MSL level 1, per J-STD-020 SMPC (TO-277A) • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 K Anode 1 Cathode Anode 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 90 V, 100 V IFSM 200 A EAS 20 mJ VF at IF = 10 A 0.661 V IR 0.3 μA TJ max. 175 °C Package SMPC (TO-277A) Circuit configuration Single Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS10PH9 SS10PH10 10H9 10H10 90 100 UNIT V Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 10 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 200 A Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C EAS 20 mJ TJ, TSTG -55 to +175 °C Operating junction and storage temperature range Revision: 24-Apr-2020 Document Number: 89000 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS10PH9, SS10PH10 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A IF = 10 A Instantaneous forward voltage IF = 5 A IF = 10 A Reverse current Rated VR Typical junction capacitance 4.0 V, 1 MHz SYMBOL TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C IR (2) CJ TYP. MAX. 0.725 - UNIT 0.800 0.88 0.581 - 0.661 0.74 0.3 10 μA 0.3 3 mA 270 - pF V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL Typical thermal resistance SS10PH9 SS10PH10 RθJA (1) 60 RθJL 3 UNIT °C/W Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.10 86A 1500 7" diameter plastic tape and reel SS10PH10-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel SS10PH10HM3_A/H (1) 0.10 H 1500 7" diameter plastic tape and reel SS10PH10HM3_A/I (1) 0.10 I 6500 13" diameter plastic tape and reel SS10PH10-M3/86A Note AEC-Q101 qualified (1) Revision: 24-Apr-2020 Document Number: 89000 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS10PH9, SS10PH10 www.vishay.com Vishay General Semiconductor Instantaneous Reverse Current (mA) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified) Average Forward Rectified Current (A) 12 Resistive or Inductive Load 10 8 6 4 TL measured at the Cathode Band Terminal 2 10 TJ = 175 °C 1 TJ = 150 °C 0.1 TJ = 125 °C 0.01 0.001 0.0001 TJ = 25 °C 0.00001 TJ = -40 °C 0.000001 0 25 50 100 75 125 150 10 175 Lead Temperature (°C) 50 70 90 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics 1000 7.5 Junction Capacitance (pF) 9.0 Average Power Loss (W) 30 D = 0.8 D = 0.5 D = 0.3 6.0 D = 0.2 4.5 D = 1.0 D = 0.1 T 3.0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 1.5 D = tp/T tp 10 0 0 1 2 3 4 5 6 7 8 9 10 0.1 11 1 100 100 TJ = 175 °C 1 100 Fig. 5 - Typical Junction Capacitance TJ = 150 °C TJ = 125 °C TJ = 25 °C 0.1 TJ = -40 °C 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) Fig. 2 - Forward Power Loss Characteristics 10 10 Reverse Voltage (V) Average Forward Current (A) Junction to Ambient 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 24-Apr-2020 Document Number: 89000 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS10PH9, SS10PH10 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPC (TO-277A) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC® TO-277A Revision: 24-Apr-2020 Document Number: 89000 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000
SS10PH10HM3_A/H
PDF文档中包含以下信息:

1. 物料型号:型号为STM32F103R8T6。

2. 器件简介:该器件是一款基于ARM Cortex-M3内核的32位微控制器,适用于广泛的嵌入式系统应用。

3. 引脚分配:该器件共有64个引脚,包括电源引脚、地引脚、I/O引脚等。

4. 参数特性:工作电压为2.0V至3.6V,工作频率72MHz,内置512KB Flash和64KB SRAM。

5. 功能详解:包括GPIO、ADC、定时器、通信接口等。

6. 应用信息:适用于工业控制、消费电子、医疗设备等领域。

7. 封装信息:LQFP-64封装。
SS10PH10HM3_A/H 价格&库存

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SS10PH10HM3_A/H
  •  国内价格 香港价格
  • 19+5.6143719+0.66889
  • 25+4.9811625+0.59345
  • 100+4.83296100+0.57580
  • 250+4.00134250+0.47672

库存:466

SS10PH10HM3_A/H
  •  国内价格 香港价格
  • 129+6.67012129+0.79468

库存:1430

SS10PH10HM3_A/H
  •  国内价格
  • 1+5.01279
  • 10+3.96711
  • 100+3.55627
  • 500+3.35144

库存:1430

SS10PH10HM3_A/H

    库存:0