SS12P2L, SS12P3L
www.vishay.com
Vishay General Semiconductor
High Current Density Surface-Mount
Schottky Barrier Rectifiers
FEATURES
eSMP ® Series
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
K
• Guardring for overvoltage protection
• Low forward voltage drop, low power losses
1
• High efficiency
• Low thermal resistance
2
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMPC (TO-277A)
K
Anode 1
Cathode
Anode 2
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
3D 3D
3D Models
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
12 A
VRRM
20 V, 30 V
IFSM
280 A
EAS
20 mJ
VF at IF = 12 A
0.38 V
TJ max.
150 °C
Package
SMPC (TO-277A)
Circuit configuration
Single
MECHANICAL DATA
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
SS12P2L
SS12P3L
S122
S123
UNIT
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
12
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
280
A
Non-repetitive avalanche energy
at IAS = 2.0 A, TJ = 25 °C
EAS
20
mJ
TJ, TSTG
-55 to +150
°C
Operating junction and storage temperature range
20
30
V
Revision: 24-Apr-2020
Document Number: 89002
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS12P2L, SS12P3L
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 6 A
Maximum instantaneous forward voltage
IF = 12 A
IF = 6 A
IF = 12 A
Maximum reverse current
Rated VR
Typical junction capacitance
4.0 V, 1 MHz
SYMBOL
TYP.
TA = 25 °C
VF (1)
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR (2)
CJ
MAX.
0.41
-
0.48
0.56
0.30
-
UNIT
V
0.38
0.46
150
1000
μA
59
120
mA
930
-
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Typical thermal resistance
SS12P2L
SS12P3L
RθJA (1)
60
RθJL
3
UNIT
°C/W
Note
(1) Units mounted on recommended PCB 1 oz. pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS12P3L-M3/86A
0.10
86A
1500
7" diameter plastic tape and reel
SS12P3L-M3/87A
0.10
87A
6500
13" diameter plastic tape and reel
SS12P3LHM3_A/H (1)
0.10
H
1500
7" diameter plastic tape and reel
0.10
I
6500
13" diameter plastic tape and reel
SS12P3LHM3_A/I
(1)
Note
(1) AEC-Q101 qualified
Revision: 24-Apr-2020
Document Number: 89002
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS12P2L, SS12P3L
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
1000
14
12
10
8
6
4
TL measured
at the Cathode Band Terminal
2
0
100
110
120
130
140
150
10000
TJ = 150 °C
100
10
TJ = 125 °C
1
1000
TJ = 25 °C
0.1
1st line
2nd line
Instantaneous Reverse Current (mA)
Average Forward Current (A)
Resistive or Inductive Load
0.01
0.001
100
0.0001
TJ = -40 °C
0.00001
0.000001
10
10
Lead Temperature (°C)
20
30
40
50
60
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 1 - Maximum Forward Current Derating Curve
7
10 000
D = 0.8
D = 0.3
5
D = 1.0
D = 0.2
4
3
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.5
Junction Capacitance (pF)
6
Average Power Loss (W)
70
D = 0.1
T
2
1
D = tp/T
1000
tp
0
100
0
2
4
6
8
10
12
14
0.1
1
Average Forward Current (A)
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Fig. 2 - Forward Power Loss Characteristics
100
10000
10
TJ = 125 °C
1000
1
100
TJ = 25 °C
0.1
TJ = -40 °C
0.01
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Transient Thermal Impedance (°C/W)
2nd line
Instantaneous Forward Current (A)
100
TJ = 150 °C
Junction to Ambient
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 24-Apr-2020
Document Number: 89002
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS12P2L, SS12P3L
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPC (TO-277A)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC® TO-277A
Revision: 24-Apr-2020
Document Number: 89002
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000