SS12P4C
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Vishay General Semiconductor
High Current Density Surface-Mount
Schottky Barrier Rectifier
FEATURES
eSMP ® Series
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
K
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal impedance
1
• Meets MSL level 1, per
LF maximum peak of 260 °C
2
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
SMPC (TO-277A)
K
Cathode
J-STD-020,
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Anode 1
Anode 2
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters and polarity protection
applications.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 6.0 A
VRRM
40 V
IFSM
150 A
EAS
20 mJ
VF at IF = 6.0 A
0.40 V
TJ max.
125 °C
Package
SMPC (TO-277A)
Circuit configuration
Common cathode
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VRRM
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1) (1)
Maximum average forward rectified current (2)
SS12P4C
UNIT
S124C
Device marking code
total device
per diode
total device
Peak forward surge current 10 ms single half sine-wave superimposed on rated load
per diode
IF(AV)
40
V
12
A
6.0
IF(AV)
3.5
A
IFSM
150
A
mJ
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode
EAS
20
Peak repetitive reverse current at tp = 2 μs, 1 kHz, at TJ = 25 °C per diode
IRRM
1.0
A
TJ, TSTG
-55 to +125
°C
Operating junction and storage temperature range
Notes
(1) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink
(2) Free air, mounted on recommended copper pad area
Revision: 24-Apr-2020
Document Number: 89141
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS12P4C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 1 A
IF = 3 A
Instantaneous forward voltage per diode
TA = 25 °C
IF = 6 A
VF (1)
IF = 1 A
IF = 3 A
TA = 100 °C
IF = 6 A
Reverse current per diode
Rated VR
Typical junction capacitance per diode
4.0 V, 1 MHz
TA = 25 °C
TA = 100 °C
IR (2)
CJ
TYP.
MAX.
0.34
-
0.40
-
0.46
0.52
0.24
-
0.31
-
0.40
0.45
UNIT
V
129
500
µA
11.9
25
mA
400
-
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS12P4C
RθJA (1)
100
RθJM (2)
3
Typical thermal resistance
UNIT
°C/W
Notes
(1) Free air, mounted on recommended copper pad area. Thermal resistance R
θJA - junction to ambient
(2) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink. Thermal resistance R
θJM - junction to mount
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS12P4C-M3/86A
0.10
86A
1500
7" diameter plastic tape and reel
SS12P4C-M3/87A
0.10
87A
6500
13" diameter plastic tape and reel
SS12P4CHM3_A/H (1)
0.10
H
1500
7" diameter plastic tape and reel
0.10
I
6500
13" diameter plastic tape and reel
SS12P4CHM3_A/I
(1)
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
14
Notes
• Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x
100 mm fin heat sink, TM measured at the terminal of cathode
band (RθJM = 3 °C/W)
• Free air, mounted on recommended copper pad area
(RθJA = 100 °C/W)
TM = 100 °C (1)
DC Forward Current (A)
12
10
8
6
TA = 25 °C (2)
4
2
0
0
25
50
75
100
125
150
Ambient Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Revision: 24-Apr-2020
Document Number: 89141
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS12P4C
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Vishay General Semiconductor
10 000
D = 0.2 D = 0.3 D = 0.5 D = 0.8
D = 0.1
Junction Capacitance (pF)
Average Power Loss (W)
www.vishay.com
D = 1.0
T
D = tp/T
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
tp
10
0
1
2
3
4
5
6
0.1
7
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Axis Title
100
10000
TJ = 125 °C
10
Transient Impedance (°C/W)
2nd line
Instantaneous Forward Current (A)
100
1000
TJ = 100 °C
1
100
TJ = 25 °C
Junction to Ambient
10
TJ = -40 °C
0.1
1
0.01
10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
0.1
1
10
100
t - Pulse Duration (s)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Axis Title
100
10000
10
TJ = 100 °C
1
1000
0.1
0.01
1st line
2nd line
Instantaneous Reverse Current (mA)
TJ = 125 °C
TJ = 25 °C
0.001
100
0.0001
0.00001
TJ = -40 °C
0.000001
10
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Revision: 24-Apr-2020
Document Number: 89141
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS12P4C
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPC (TO-277A)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC® TO-277A
Revision: 24-Apr-2020
Document Number: 89141
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2023
1
Document Number: 91000
