SS14HE

Surface Mount Schottky Barrier Rectifiers 1 A, 30 V - 60 V SS13HE, NRVBSS13HE Series www.onsemi.com Features • • • • • • Very Low Profile − Typical Height of 0.68 mm Low Power Loss, High Efficiency Moisture Sensitivity Level 1 per J−STD−020 UL Flammability 94V−0 Classification RoHS Compliant / Green Molding Compound NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 1 Cathode 2 Anode SOD−323EP CASE 477AD MARKING DIAGRAM &Y &Z**&G Band Indicates Cathode &Y &Z ** &G = Binary Calendar Year Coding Scheme = Assembly Plant Code = Specific Device Code = Single Digit Weekly Data Code ORDERING INFORMATION Part Number Device Code Marking Package Shipping Method† SS13HE 1A SOD−323HE 3000 / Tape and Reel SS14HE 1B SOD−323HE 3000 / Tape and Reel SASS14HE 1B SOD−323HE 3000 / Tape and Reel SS16HE 1C SOD−323HE 3000 / Tape and Reel NRVBSS13HE 1A SOD−323HE 3000 / Tape and Reel NRVBSS14HE 1B SOD−323HE 3000 / Tape and Reel NRVBSS16HE 1C SOD−323HE 3000 / Tape and Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 May, 2021 − Rev. 4 1 Publication Order Number: SS13HE/D SS13HE, NRVBSS13HE Series Table 1. ABSOLUTE MAXIMUM RATINGS Values are at TA = 25°C unless otherwise noted. Value SS13HE SS14HE, SASS14HE SS16HE Unit Maximum Repetitive Peak Reverse Voltage 30 40 60 V Reverse Voltage 30 40 60 V Parameter Symbol VRRM VR IF(AV) Maximum Average Forward Rectified Current 1 A IFSM Peak Forward Surge Current: 8.3 ms Single Half Sine−Wave Superimposed on Rated Load 25 A Operating Junction Temperature Range −55 to +150 °C Storage Temperature Range −55 to +150 °C TJ TSTG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 2. THERMAL CHARACTERISTICS (Note 1) Values are at TA = 25°C unless otherwise noted. Parameter Symbol Value Unit YJL Junction−to−Lead Thermal Resistance Thermocouple Soldered to Cathode 21 °C/W RqJA Junction−to−Ambient Thermal Resistance (Note 1) 199 °C/W 1. Per JESD51−3 Recommended Thermal Test Board. Device mounted on FR−4 PCB, board size = 76.2 mm x 114.3 mm Table 3. ELECTRICAL CHARACTERISTICS Values are at TA = 25°C unless otherwise noted. Symbol VF Parameter Instantaneous Forward Voltage (Note 2) Conditions IF = 0.5 A, TJ = 25°C IF = 0.5 A, TJ = 125°C Min SS13HE, SS14HE, SASS14HE IF = 1.0 A, TJ = 25°C IF = 1.0 A, TJ = 125°C IF = 0.5 A, TJ = 25°C IR Reverse Current at Rated VR SS16HE CJ Reverse Recovery Time Junction Capacitance Max Unit V 0.41 0.31 0.46 0.55 0.40 0.50 0.51 IF = 0.5 A, TJ = 125°C 0.45 IF = 1.0 A, TJ = 25°C 0.61 0.68 IF = 1.0 A, TJ = 125°C 0.54 0.60 5.0 50 mA TJ = 125°C SS13HE, SS14HE, SASS14HE 3.0 10 mA TJ = 25°C SS16HE 2.0 50 mA 1.5 10 mA TJ = 25°C TJ = 125°C Trr Typ IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A VR = 4.0 V, f = 1 MHz SS13HE, SS14HE, SASS14HE 5.6 SS16HE 8.3 SS13HE, SS14HE, SASS14HE 55 SS16HE 43 ns pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse test with PW = 300 ms, 1% duty cycle www.onsemi.com 2 SS13HE, NRVBSS13HE Series TYPICAL PERFORMANCE CHARACTERISTICS 1 0.8 0.6 0.4 RESISTIVE OR INDUETIVE LOAD 0.2 0 0 25 50 75 100 125 40 PEAK FORWARD SURAGE CURRENT(A) AVERAGE FORWARD CURRENT (A) 1.2 150 8.3ms Single Half Sine−Wave 30 20 10 0 1 10 Figure 1. Forward Current Derating Curve Figure 2. Maximum Non−Repetitive Forward Surge Current 10 10 o TA = 150 C 1 IF − FORWARD CURRENT (A) IF − FORWARD CURRENT (A) 100 NUMBER OF CYCLES AT 60 Hz LEAD TEMPERATURE (°C) o TA = 125 C o TA = 25 C 0.1 o TA = −40 C o TA = 150 C 1 o TA = 125 C o TA = 25 C 0.1 o TA = −40 C o o TA = −55 C 0.01 0.0 0.2 0.4 0.6 TA = −55 C 0.8 0.01 1.0 0.0 0.2 VF − FORWARD VOLTAGE (V) Figure 3. Typical Forward Characteristics − SS13HE / SS14HE 10000 o TA = 150 C o TA = 125 C 100 10 1 o TA = 25 C o o TA = −40 C 0.01 TA = −55 C 0.001 100 o TA = 25 C 0.01 o TA = −40 C 0.001 1E−5 20 100 o TA = 75 C 1 0.1 1E−4 80 o TA = 125 C o TA = 150 C 10 1E−5 20 60 1.0 1000 1E−4 40 0.8 10000 o TA = 75 C 1000 0.1 0.6 Figure 4. Typical Forward Characteristics − SS16HE IR − LEAKAGE CURRENT (mA) IR − LEAKAGE CURRENT (mA) 100000 0.4 VF − FORWARD VOLTAGE (V) PERCENT OF RATED REVERSE VOLTAGE (%) o TA = −55 C 40 60 80 PERCENT OF RATED REVERSE VOLTAGE (%) Figure 5. Typical Reverse Characteristics − SS13HE / SS14HE Figure 6. Typical Reverse Characteristics − SS16HE www.onsemi.com 3 100 SS13HE, NRVBSS13HE Series TYPICAL PERFORMANCE CHARACTERISTICS CAPACITANCE (pF) 1000 SS13HE/SS14HE 100 SS16HE 10 1 0.1 1 10 100 REVERSE VOLTAGE (V) Figure 7. Typical Junction Capacitance www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−323EP CASE 477AD ISSUE O DATE 31 AUG 2016 2.30 1.75 0.50 1.40 1.15 1.10 1.00 2.00 TOP VIEW 0.80 LAND PATTERN RECOMMENDATION 0.75 0.55 2.70 2.30 FRONT VIEW 1.55 1.10 0.80 0.40 0.95 0.65 0.20 0.10 NOTES: A. THIS PACKAGE DOES NOT CONFORM TO ANY STANDARDS. B. ALL DIMENSIONS ARE IN MILLIMETERS. 0.85 C. DIMENSIONS ARE EXCLUSIVE OF BURRS, 0.45 MOLD FLASH AND TIE BAR PROTRUSIONS. BOTTOM VIEW DOCUMENT NUMBER: DESCRIPTION: 98AON13727G SOD−323EP Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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