SS15P3S-M3/87A

SS15P3S www.vishay.com Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Schottky Rectifier FEATURES eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Guardring for overvoltage protection • Low forward voltage drop, low power losses 1 • High efficiency 2 • Low thermal resistance SMPC (TO-277A) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C K Anode 1 Cathode Anode 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 15 A VRRM 30 V IFSM 280 A EAS 20 mJ VF at IF = 15 A 0.42 V TJ max. 150 °C Package SMPC (TO-277A) Circuit configuration Single Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current (fig. 1) SS15P3S UNIT 153S VRRM IF 30 15 (1) 4.5 (2) V A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 280 A Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C EAS 20 mJ TOP, TSTG -55 to +150 °C TJ ≤ 200 °C Operating junction and storage temperature range Junction temperature in DC forward current without reverse bias, t ≤ 1 h (3) Notes (1) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink (2) Free air, mounted on recommended copper pad area (3) Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test Revision: 07-Apr-2021 Document Number: 89128 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS15P3S www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 7.5 A TA = 25 °C IF = 15 A Instantaneous forward voltage SYMBOL VF (1) IF = 7.5 A TA = 125 °C IF = 15 A TA = 25 °C Reverse current VR = 30 V Typical junction capacitance 4.0 V, 1 MHz TA = 125 °C IR (2) CJ TYP. MAX. 0.43 - 0.50 0.57 0.32 - UNIT V 0.42 0.49 150 1000 μA 59 120 mA 930 - pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL VALUE RθJA (1) 100 RθJM (2) 3 UNIT °C/W Notes (1) Free air, mounted on recommended copper pad area. Thermal resistance R θJA - junction to ambient. (2) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink. Thermal resistance R θJM - junction to mount. ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS15P3S-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel SS15P3S-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel Revision: 07-Apr-2021 Document Number: 89128 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS15P3S www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title TA = 25 °C (2) 12 TA = 25 °C (3) 10 8 TA = 25 °C (4) 6 (5) 4 2 TJ = 150 °C 1000 10 1st line 2nd line 14 (1) 2nd line Instantaneous Forward Current (A) TM = 100 °C 16 TJ = 125 °C TJ = 25 °C 100 1 TJ = -40 °C 0 10 0.1 0 25 50 100 75 125 150 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Ambient Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Maximum Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Notes Axis Title (1) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x (2) Mounted on 30 mm x 30 mm Al PCB (R θJA = 20 °C/W) (3) Mounted on 30 mm x 30 mm x 2 copper pad areas FR4 PCB (RθJA = 30 °C/W) (4) Mounted on 25 mm x 25 mm x 2 copper pad areas FR4 PCB (RθJA = 30 °C/W) (5) Free air, mounted on recommended copper pad area (RθJA = 100 °C/W) 2nd line Instantaneous Reverse Current (mA) 100 mm fin heat sink, TM measured at the terminal of cathode band 1000 10000 TJ = 150 °C 100 10 TJ = 125 °C 1000 1 1st line 2nd line DC Forward Current (A) 10000 100 18 0.1 TJ = 25 °C 0.01 100 0.001 0.0001 0.00001 TJ = -40 °C 10 0.000001 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics 9 10 000 D = 0.8 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.5 7 Junction Capacitance (pF) Average Power Loss (W) 8 D = 0.3 6 D = 0.2 D = 1.0 5 4 D = 0.1 T 3 2 1 D = tp/T 1000 tp 0 100 0 2 4 6 8 10 12 14 16 18 0.1 1 10 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 100 Revision: 07-Apr-2021 Document Number: 89128 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS15P3S www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPC (TO-277A) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC® TO-277A Revision: 07-Apr-2021 Document Number: 89128 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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