SS1F4HM3/I

SS1F4 www.vishay.com Vishay General Semiconductor Surface-Mount Schottky Barrier Rectifiers eSMP® FEATURES Series • Low profile package Available • Ideal for automated placement • Low forward voltage drop, low power losses • Meets MSL level 1, per LF maximum peak of 260 °C Top view Bottom view • Wave and reflow solderable • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 SMF (DO-219AB) Cathode J-STD-020, Anode LINKS TO ADDITIONAL RESOURCES 3D 3D • Compatible to SOD-123W package case outline • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS 3D Models For use in high frequency inverters, freewheeling, DC/DC converters, and polarity protection in commercial, industrial, and automotive applications. PRIMARY CHARACTERISTICS IF(AV) 1.0 A MECHANICAL DATA VRRM 40 V IFSM 40 A Case: SMF (DO-219AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified VF at IF = 1.0 A (TA = 125 °C) 0.37 V TJ max. (AC mode) 150 °C TJ max. (DC forward current) 175 °C Package SMF (DO-219AB) Circuit configuration Single Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.1) Peak forward surge current 8.3 ms single half sine-wave TJ (init) = 25 °C Operating junction and storage temperature range Junction temperature in DC forward current without reverse bias SS1F4 UNIT 14 VRRM 40 V IF(AV) (1) 1.0 A IFSM 40 A TJ, TSTG -55 to +150 °C TJ 175 °C Note (1) Free air, mounted on recommended copper pad area Revision: 13-May-2020 Document Number: 87729 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS1F4 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 0.7 A Instantaneous forward voltage TA = 25 °C IF = 1.0 A VF (1) IF = 0.7 A TA = 125 °C IF = 1.0 A Reverse current VR = 40 V Typical junction capacitance 4.0 V, 1 MHz SYMBOL TA = 25 °C TA = 125 °C TYP. MAX. 0.43 - 0.46 0.52 0.33 - 0.37 0.43 - 150 μA 7 25 mA 85 - pF IR (2) CJ UNIT V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 5 ms THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL SS1F4 RθJA (1)(2)(3) 125 RθJM (2)(3) 16.5 UNIT °C/W Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT