SS1FL3-M3/H

SS1FL3 www.vishay.com Vishay General Semiconductor Surface-Mount Schottky Barrier Rectifier eSMP® FEATURES Series • Low profile package Available • Ideal for automated placement • Low forward voltage drop, low power losses • Low leakage current Top view Bottom view J-STD-020, • Wave and reflow solderable SMF (DO-219AB) Cathode • Meets MSL level 1, per LF maximum peak of 260 °C Anode • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Compatible to SOD-123W package case outline LINKS TO ADDITIONAL RESOURCES 3D 3D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS 3D Models For use in high frequency inverters, freewheeling, DC/DC converters, and polarity protection in commercial, industrial, and automotive applications. PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 30 V IFSM 40 A VF at IF = 1.0 A (TA = 125 °C) 0.31 V TJ max. 150 °C Package SMF (DO-219AB) Circuit configuration Single MECHANICAL DATA Case: SMF (DO-219AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Non-repetitive peak forward surge current 8.3 ms single half sine-wave at TJ (init) = 25 °C Operating junction and storage temperature range SS1FL3 UNIT 1L3 VRRM 30 V 1.0 A IFSM 40 A TJ, TSTG -55 to +150 °C IF(AV) (1) Note (1) Free air, mounted on recommended copper pad area Revision: 13-May-2020 Document Number: 87614 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS1FL3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 0.5 A Instantaneous forward voltage IF = 1.0 A IF = 0.5 A IF = 1.0 A Reverse current VR = 30 V Typical junction capacitance 4.0 V, 1 MHz SYMBOL TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TYP. CJ UNIT 0.38 - 0.42 0.48 0.26 - 0.31 0.35 - 200 μA 6 12 mA 130 - pF IR (2) TA = 125 °C MAX. V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 5 ms THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL SS1FL3 RθJA (1)(2)(3) 125 RθJM (2)(3) 22 UNIT °C/W Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J θJA (2) Device mounted on FR4 PCB, 2 oz. standard footprint (3) Thermal resistance R θJA - junction to ambient; RθJM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS1FL3-M3/H 0.015 H 3000 7" diameter plastic tape and reel SS1FL3-M3/I 0.015 I 10 000 13" diameter plastic tape and reel SS1FL3HM3/H (1) 0.015 H 3000 7" diameter plastic tape and reel SS1FL3HM3/I (1) 0.015 I 10 000 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 13-May-2020 Document Number: 87614 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS1FL3 www.vishay.com Vishay General Semiconductor 1.2 100 000 1.1 Instantaneous Reverse Current (μA) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) RthJM = 22 °C/W 1.0 0.9 0.8 0.7 RthJA = 125 °C/W 0.6 0.5 0.4 0.3 0.2 Mounted on recommended areas, FR4 PCB; typical values 0.1 0.0 0 25 50 75 100 125 TJ = 150 °C 10 000 1000 10 TJ = 25 °C 1 0.1 TJ = -40 °C 0.01 0.001 150 10 15 Mount Temperature (°C) 25 30 Fig. 4 - Typical Reverse Leakage Characteristics 1000 D = 0.8 0.6 D = 0.5 0.5 D = 0.3 D = 0.2 0.4 D = 1.0 D = 0.1 0.3 T 0.2 0.1 D = tp/T Junction Capacitance (pF) 0.7 Average Power Loss (W) 20 Reverse Voltage (V) Fig. 1 - Typical Forward Current Derating Curve TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 tp 0.0 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 5 Average Forward Current (A) TJ = 125 °C TJ = 100 °C TJ = 25 °C TJ = -40 °C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Transient Thermal Impedance (°C/W) TJ = 150 °C 0 15 20 25 30 Fig. 5 - Typical Junction Capacitance 10 1 10 Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Instantaneous Forward Current (A) TJ = 100 °C TJ = 125 °C 100 1000 Junction to Ambient 100 10 1 0.001 Mounted on standard footprint ,FR4 PCB 0.1 10 1000 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 13-May-2020 Document Number: 87614 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS1FL3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in millimeters (inches) 0.85 (0.033) 0 (0.000) 0.1 (0.004) 5 5 0.1(0.003) 1.7 (0.067) Detail Z enlarged 1.2 (0.047) 0.8 (0.031) 0.25 (0.010) 1.9 (0.075) 0.35 (0.014) 1.08 (0.043) 2.9 (0.114) 0.88 (0.035) 2.7 (0.106) 3.9 (0.154) 3.5 (0.138) Foot print recommendation: Created - Date: 15. February 2005 Rev. 3 - Date: 13. March 2007 Document no.: S8-V-3915.01-001 (4) 17247 1.3 (0.051) 1.4 (0.055) 1.3 (0.051) 2.9 (0.114) Revision: 13-May-2020 Document Number: 87614 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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