SS1P3, SS1P4
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Vishay General Semiconductor
High Current Density Surface-Mount
Schottky Barrier Rectifiers
FEATURES
eSMP ® Series
•
•
•
•
•
•
Very low profile - typical height of 1.0 mm
Ideal for automated placement
Low forward voltage drop, low power losses
High efficiency
Low thermal resistance
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
SMP (DO-220AA)
Cathode
Anode
TYPICAL APPLICATIONS
LINKS TO ADDITIONAL RESOURCES
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
3D 3D
3D Models
Note
• These devices are not AEC-Q101 qualified
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
30 V, 40 V
IFSM
30 A
EAS
10 mJ
VF
0.40 V, 0.45 V
TJ max.
150 °C
Package
SMP (DO-220AA)
Circuit configuration
Single
MECHANICAL DATA
Case: SMP (DO-220AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS1P3
SS1P4
13
14
Device marking code
UNIT
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 10 ms single half sine-wave superimposed
on rated load
IFSM
30
A
Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 10 mH
Voltage rate of change (rated VR)
Operating junction and storage temperature range
30
40
V
EAS
10
mJ
dV/dt
10 000
V/μs
TJ, TSTG
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
TEST CONDITIONS
IF = 1.0 A
TJ = 125 °C
TJ = 25 °C
Maximum reverse current at rated VR
Typical junction capacitance
TJ = 25 °C
TJ = 125 °C
4.0 V, 1 MHz
SYMBOL
VF (1)
IR (2)
CJ
SS1P3
SS1P4
0.50
0.53
0.40
0.45
UNIT
V
150
μA
15
mA
70
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
Revision: 08-Mar-2022
Document Number: 88935
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS1P3, SS1P4
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
SS1P3
SS1P4
RθJA (1)
105
RθJL (1)
15
RθJC (1)
25
Typical thermal resistance
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 5.0 mm x 5.0 mm copper pad areas. R
θJL is measured
at the terminal of cathode band. RθJC is measured at the top center of the body
ORDERING INFORMATION (Example)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS1P3-M3/84A
PREFERRED P/N
0.024
84A
3000
7" diameter plastic tape and reel
SS1P3-M3/85A
0.024
85A
10 000
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
0.6
D = 0.8
SS1P4
Resistive or Inductive Load
D = 0.5
0.5
1.0
Average Power Loss (W)
Average Forward Rectified Current (A)
1.2
0.8
0.6
0.4
TL Measured
at the Cathode Band Terminal
0.2
D = 0.3
D = 0.2
0.4
D = 1.0
D = 0.1
0.3
T
0.2
0.1
D = tp/T
tp
0
0
0
25
50
75
100
125
0
150
0.2
0.4
0.6
0.8
1.0
1.2
Lead Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Forward Power Loss Characteristics
0.6
40
Average Power Loss (W)
0.5
D = 0.8
D = 0.5
0.4
D = 0.3
D = 0.2
0.3
D = 1.0
D = 0.1
T
0.2
0.1
D = tp/T
tp
0
Peak Forward Surge Current (A)
SS1P3
30
20
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
Average Forward Current (A)
Number of Cycles at 50 Hz
Fig. 2 - Forward Power Loss Characteristics
Fig. 4 - Typical Instantaneous Forward Characteristics
Revision: 08-Mar-2022
Document Number: 88935
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS1P3, SS1P4
www.vishay.com
Vishay General Semiconductor
10000
1000
10
100
1
TJ = 25 °C
TJ = -40 °C
Junction Capacitance (pF)
TJ = 125 °C
10
0.1
0.3
0.5
0.7
0.9
100
10
SS1P3
0.1
1.1
1.3
1
0.1
1.5
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 5 - Typical Instantaneous Forward Characteristics
Fig. 8 - Typical Junction Capacitance
10000
1000
TJ = 150 °C
TJ = 125 °C
1000
1st line
2nd line
10
1
100
TJ = 25 °C
TJ = -40 °C
SS1P4
10
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
Transient Thermal Impedance (°C/W)
100
2nd line
Instantaneous Forward Current (A)
1000
TJ = 150 °C
1st line
2nd line
2nd line
Instantaneous Forward Current (A)
100
Junction to Ambient
100
10
1
0.01
1.5
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 6 - Typical Instantaneous Forward Characteristics
Fig. 9 - Typical Transient Thermal Impedance
Axis Title
10000
100
TJ = 150 °C
10
1
1000
TJ = 125 °C
1st line
2nd line
2nd line
Instantaneous Reverse Current (mA)
1000
0.1
0.01
0.001
100
TJ = 25 °C
0.0001
0.00001
TJ = -40 °C
10
0.000001
10
20
30
40
50
60
70
80
90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 7 - Typical Reverse Leakage Characteristics
Revision: 08-Mar-2022
Document Number: 88935
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS1P3, SS1P4
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMP (DO-220AA)
0.012 (0.30) REF.
Cathode Band
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.142 (3.61)
0.126 (3.19)
0.036 (0.91)
0.024 (0.61)
0.103 (2.60)
0.087 (2.20)
0.032 (0.80)
0.016 (0.40)
0.158 (4.00)
0.146 (3.70)
Mounting pad layout
0.105
(2.67)
0.013 (0.35)
0.004 (0.10)
0.025 0.030
(0.635) (0.762)
0.045 (1.15)
0.033 (0.85)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
0.100
(2.54)
0.050
(1.27)
Revision: 08-Mar-2022
Document Number: 88935
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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Revision: 01-Jan-2022
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Document Number: 91000
