SS210-M3/5BT

SS29, SS210 www.vishay.com Vishay General Semiconductor High-Voltage Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SMB (DO-214AA) TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 90 V, 100 V IFSM 75 A VF 0.71 V TJ max. 150 °C Package SMB (DO-214AA) Diode variations Single MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS29 SS210 S9 S10 UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Maximum RMS voltage VRMS 63 70 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current (fig. 1) IF(AV) 1.5 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 75 A Peak repetitive reverse surge current at tp = 2 μs, 1 kHz IRRM 1.0 A Voltage rate of change (rated VR) dV/dt 10 000 V/µs TJ, TSTG -55 to +150 °C Operating junction and storage temperature range Revision: 03-Jul-17 Document Number: 89444 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS29, SS210 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL SS29 SS210 IF = 0.1 A IF = 1.0 A Maximum instantaneous forward voltage (1) 0.43 TA = 25 °C 0.75 IF = 3.0 A IF = 1.5 A IF = 3.0 A VF 0.95 V 0.71 TA = 100 °C 0.85 TA = 25 °C Maximum DC reverse current at rated VR (1) UNIT 30 µA 5 mA IR TA = 100 °C Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum thermal resistance (1) SS29 SS210 RθJA 85 RθJL 25 UNIT °C/W Note P.C.B. mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas (1) ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS210-M3/52T 0.096 52T 750 7" diameter plastic tape and reel SS210-M3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel PREFERRED P/N RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 2.0 2.5 D = 0.8 Average Power Loss (W) Average Forward Current (A) Resistive or Inductive Load 1.5 1.0 0.5 P.C.B. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Areas D = 0.5 2.0 D = 0.3 1.5 D = 1.0 D = 0.2 D = 0.1 1.0 T 0.5 D = tp/T tp 0 0 0 25 50 75 100 125 150 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 Lead Temperature (°C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 03-Jul-17 Document Number: 89444 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS29, SS210 www.vishay.com Vishay General Semiconductor 10 000 Instantaneous Reverse Current (µA) Peak Forward Surge Current (A) 100 75 50 25 0 TJ = 150 °C 1000 TJ = 125 °C 100 10 TJ = 25 °C 1 0.1 1 10 10 100 20 30 40 50 60 70 80 90 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Reverse Leakage Characteristics 1000 TJ = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 125 °C 10 TJ = 25 °C 1 100 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1.4 1 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 4 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Junction Capacitance 100 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155(3.94) 0.130(3.30) 0.086(2.20) 0.077(1.95) 0.086 (2.18) MIN. 0.180(4.57) 0.160(4.06) 0.012(0.305) 0.006(0.152) 0.060 (1.52) MIN. 0.096(2.44) 0.084(2.13) 0.220 REF. 0.008(0.2) 0 (0) 0.060(1.52) 0.030(0.76) 0.220(5.59) 0.205(5.21) Revision: 03-Jul-17 Document Number: 89444 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: SS210-M3/52T SS210-M3/5BT SS29-M3/52T SS29-M3/5BT