SS22S-M3, SS23S-M3, SS24S-M3
www.vishay.com
Vishay General Semiconductor
Surface-Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMA (DO-214AC)
Cathode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Anode
TYPICAL APPLICATIONS
LINKS TO ADDITIONAL RESOURCES
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
3D 3D
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
IF(AV)
2.0 A
VRRM
20 V, 30 V, 40 V
IFSM
40 A
VF at IF = 2.0 A
0.517 V
TJ max.
150 °C
Package
SMA (DO-214AC)
Circuit configuration
Single
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
per
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
SS22S
SS23S
SS24S
22S
23S
24S
20
30
40
UNIT
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
2.0
A
Peak forward surge current 10 ms single half sine-wave superimposed
on rated load
IFSM
40
A
dV/dt
10 000
V/μs
TJ, TSTG
-55 to +150
°C
Voltage rate of change (rated VR)
Operating junction and storage temperature range
V
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Instantaneous forward voltage
TEST CONDITIONS
IF = 1 A
IF = 2 A
Reverse current
Rated VR
Typical junction capacitance
4.0 V, 1 MHz
TJ = 25 °C
TJ = 25 °C
TJ = 100 °C
SYMBOL
VF (1)
IR (2)
CJ
TYP.
MAX.
0.436
-
0.517
0.55
UNIT
V
13
200
μA
1.65
8
mA
130
-
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
Revision: 24-Apr-2020
Document Number: 89407
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS22S-M3, SS23S-M3, SS24S-M3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
SS22S
SS23S
RθJA (1)
75
RθJL (1)
25
SS24S
UNIT
°C/W
Note
(1) PCB mounted with 0.4" x 0.4" (10 mm x 10 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS24S-M3/61T
0.064
61T
1800
7" diameter plastic tape and reel
SS24S-M3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
50
8.3 ms Single Half Sine-Wave
at Rated TL
Resistive or Inductive Load
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
2.4
2.0
1.6
1.2
0.8
P.C.B. Mounted on
0.4" x 0.4" (10 mm x 10 mm)
Copper Pad Areas
0.4
40
30
20
10
0
0
0
25
50
75
100
125
150
0
175
10
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current
Axis Title
1.2
100
Average Power Loss (W)
1.0
2nd line
Instantaneous Forward Current (A)
D = 0.8
D = 0.3 D = 0.5
D = 0.2
D = 0.1
0.8
D = 1.0
0.6
T
0.4
0.2
D = tp/T
tp
0
0
0.5
1.0
1.5
2.0
2.5
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
10000
TJ = 150 °C
10
1000
TJ = 125 °C
1
100
TJ = 25 °C
TJ = -40 °C
0.1
10
0.1
0.3
0.5
0.7
0.9
1.1
1.3
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Instantaneous Forward Characteristics
Revision: 24-Apr-2020
Document Number: 89407
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS22S-M3, SS23S-M3, SS24S-M3
www.vishay.com
Vishay General Semiconductor
Axis Title
10000
1000
10 000
Junction Capacitance (pF)
TJ = 150 °C
TJ = 125 °C
1000
1000
100
1st line
2nd line
Instantaneous Reverse Current (µA)
100 000
TJ = 25 °C
10
1
100
0.1
TJ = -40 °C
0.01
10
0.001
10
20
30
40
50
60
70
80
90
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
100
0.1
1
10
100
Reverse Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 24-Apr-2020
Document Number: 89407
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 01-Jan-2022
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Document Number: 91000