SS26-E3/52T

SS22, SS23, SS24, SS25, SS26 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • • • • • • • Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency Available Low forward voltage drop High surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SMB (DO-214AA) TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 20 V, 30 V, 40 V, 50 V, 60 V IFSM 75 A VF 0.50 V, 0.70 V TJ max. 150 °C Package SMB (DO-214AA) Diode variations Single MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS22 SS23 SS24 SS25 SS26 S2 S3 S4 S5 S6 UNIT Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 V Maximum RMS voltage VRMS 14 21 28 35 42 V Maximum DC blocking voltage VDC 20 30 40 50 60 Max. average forward rectified current at TL (fig. 1) IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 75 A Non-repetitive avalanche energy at TA = 25 °C, IAS = 2.0 A, L = 10 mH EAS 20 mJ Electrostatic discharge capacitor voltage Human body model: C = 100 pF, R = 1.5 kΩ VC 8.0 kV dV/dt 10 000 V/μs TJ -65 to +150 °C TSTG -65 to +150 °C Voltage rate of change (rated VR) Operating junction temperature range Storage temperature range V Revision: 21-Jul-17 Document Number: 88748 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS22, SS23, SS24, SS25, SS26 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage (1) 2.0 A Maximum DC reverse current at rated DC blocking voltage (1) TA = 25 °C SYMBOL SS22 SS23 VF SS25 SS26 0.7 UNIT V 0.4 IR TA = 100 °C SS24 0.5 mA 10 Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance (1) SS22 SS23 SS24 RθJA 75 RθJL 17 SS25 SS26 UNIT °C/W Note PCB mounted with 0.55" x 0.55" (14 mm x 14 mm) copper pad areas (1) ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS26-E3/52T 0.096 52T 750 7" diameter plastic tape and reel SS26-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel SS26HE3_A/H (1) 0.096 H 750 7" diameter plastic tape and reel SS26HE3_A/I (1) 0.096 I 3200 13" diameter plastic tape and reel SS26-M3/52T 0.096 52T 750 7" diameter plastic tape and reel SS26-M3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel 0.096 H 750 7" diameter plastic tape and reel 0.096 I 3200 13" diameter plastic tape and reel SS26HM3_A/H (1) SS26HM3_A/I (1) Note (1) AEC-Q101 qualified 2.5 100 Peak Forward Surge Current (A) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 2.0 1.5 1.0 PCB Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) Copper Pad Area 0.5 SS22 thru SS26 0 0 25 50 75 100 125 150 At Rated TL 8.3 ms Single Half Sine-Wave 80 60 40 20 0 1 10 100 Lead Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Surge Current Revision: 21-Jul-17 Document Number: 88748 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS22, SS23, SS24, SS25, SS26 www.vishay.com Vishay General Semiconductor 1000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 150 °C Pulse Width = 300 ˩s 1 % Duty Cycle 1 TJ = 25 °C 0.1 100 SS22 thru SS24 SS25 and SS26 0.01 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 Reverse Voltage (V) Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Instantaneous Reverse Current (mA) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p SS22 thru SS24 SS25 and SS26 Fig. 5 - Typical Junction Capacitance 1000 SS22 thru SS24 SS25 and SS26 100 TJ = 150 °C 10 1 TJ = 125 °C TJ = 75 °C 0.1 TJ = 25 °C 0.01 0.001 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Current Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155(3.94) 0.130(3.30) 0.086(2.20) 0.077(1.95) 0.086 (2.18) MIN. 0.180(4.57) 0.160(4.06) 0.012(0.305) 0.006(0.152) 0.060 (1.52) MIN. 0.096(2.44) 0.084(2.13) 0.220 REF. 0.008(0.2) 0 (0) 0.060(1.52) 0.030(0.76) 0.220(5.59) 0.205(5.21) Revision: 21-Jul-17 Document Number: 88748 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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