SS29, SS210
www.vishay.com
Vishay General Semiconductor
High-Voltage Surface Mount Schottky Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
SMB (DO-214AA)
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
1.5 A
VRRM
90 V, 100 V
IFSM
75 A
VF
0.71 V
TJ max.
150 °C
Package
SMB (DO-214AA)
Diode variations
Single
MECHANICAL DATA
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
SS29
SS210
S9
S10
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum RMS voltage
VRMS
63
70
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current (fig. 1)
IF(AV)
1.5
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
75
A
Peak repetitive reverse surge current at tp = 2 μs, 1 kHz
IRRM
1.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/µs
TJ, TSTG
-55 to +150
°C
Operating junction and storage temperature range
Revision: 03-Jul-17
Document Number: 89444
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS29, SS210
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SS29
SS210
IF = 0.1 A
IF = 1.0 A
Maximum instantaneous forward
voltage (1)
0.43
TA = 25 °C
0.75
IF = 3.0 A
IF = 1.5 A
IF = 3.0 A
VF
0.95
V
0.71
TA = 100 °C
0.85
TA = 25 °C
Maximum DC reverse current at rated VR (1)
UNIT
30
µA
5
mA
IR
TA = 100 °C
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum thermal resistance (1)
SS29
SS210
RθJA
85
RθJL
25
UNIT
°C/W
Note
P.C.B. mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
(1)
ORDERING INFORMATION (Example)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS210-M3/52T
0.096
52T
750
7" diameter plastic tape and reel
SS210-M3/5BT
0.096
5BT
3200
13" diameter plastic tape and reel
PREFERRED P/N
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
2.0
2.5
D = 0.8
Average Power Loss (W)
Average Forward Current (A)
Resistive or Inductive Load
1.5
1.0
0.5
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
D = 0.5
2.0
D = 0.3
1.5
D = 1.0
D = 0.2
D = 0.1
1.0
T
0.5
D = tp/T
tp
0
0
0
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
Lead Temperature (°C)
Average Forward Current (A)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 03-Jul-17
Document Number: 89444
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS29, SS210
www.vishay.com
Vishay General Semiconductor
10 000
Instantaneous Reverse Current (µA)
Peak Forward Surge Current (A)
100
75
50
25
0
TJ = 150 °C
1000
TJ = 125 °C
100
10
TJ = 25 °C
1
0.1
1
10
10
100
20
30
40
50
60
70
80
90
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Reverse Leakage Characteristics
1000
TJ = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TJ = 125 °C
10
TJ = 25 °C
1
100
10
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1.4
1
10
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Junction Capacitance
100
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.155(3.94)
0.130(3.30)
0.086(2.20)
0.077(1.95)
0.086 (2.18)
MIN.
0.180(4.57)
0.160(4.06)
0.012(0.305)
0.006(0.152)
0.060 (1.52)
MIN.
0.096(2.44)
0.084(2.13)
0.220 REF.
0.008(0.2)
0 (0)
0.060(1.52)
0.030(0.76)
0.220(5.59)
0.205(5.21)
Revision: 03-Jul-17
Document Number: 89444
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2019
1
Document Number: 91000
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