SS3P3LHM3_A/H

SS3P3L, SS3P4L www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP ® Series • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement K • Low forward voltage drop, low power losses • High efficiency 1 • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C 2 SMPC (TO-277A) K Anode 1 Cathode Anode 2 DESIGN SUPPORT TOOLS J-STD-020, • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 click logo to get started TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. Models Available MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 30 V, 40 V IFSM 150 A EAS 20 mJ VF at IF = 3.0 A 0.335 V TJ max. 150 °C Package SMPC (TO-277A) Circuit configuration Single Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified  (“_X” denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS3P3L SS3P4L S33 S34 30 40 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 3.0 A Peak forward surge current 10 ms single half sine-wave  superimposed on rated load IFSM 150 A EAS 20 mJ TJ, TSTG -55 to +150 °C Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C Operating junction and storage temperature range V Revision: 29-Jan-2019 Document Number: 88986 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS3P3L, SS3P4L www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.5 A Maximum instantaneous forward voltage SYMBOL TA = 25 °C IF = 3.0 A VF (1) IF = 1.5 A TA = 125 °C IF = 3.0 A TA = 25 °C Maximum reverse current Rated VR Typical junction capacitance 4.0 V, 1 MHz IR (2) TA = 125 °C CJ TYP. MAX. 0.384 - UNIT 0.427 0.47 0.268 - 0.335 0.38 61.8 250 μA 26.7 40 mA 280 - μA V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL Typical thermal resistance SS3P3L SS3P4L RJA (1) 60 RJL 3 UNIT °C/W Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE SS3P4L-M3/86A PREFERRED P/N 0.10 86A 1500 7" diameter plastic tape and reel SS3P4L-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel SS3P4LHM3_A/H (1) 0.10 H 1500 7" diameter plastic tape and reel SS3P4LHM3_A/I (1) 0.10 I 6500 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 29-Jan-2019 Document Number: 88986 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS3P3L, SS3P4L www.vishay.com Vishay General Semiconductor Instantaneous Reverse Current (mA) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified) Average Forward Rectified Current (A) 3.0 Resistive or Inductive Load 2.5 2.0 1.5 1.0 TL measured at the Cathode Band Terminal 0.5 1000 TJ = 150 °C 100 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0.001 TJ = -40 °C 0.0001 0.00001 0.000001 0 80 90 100 110 120 130 140 10 150 40 50 60 70 80 90 100 Fig. 4 - Typical Reverse Leakage Characteristics Fig. 1 - Forward Current Derating Curve 1000 1.5 D = 0.5 D = 0.8 1.2 D = 0.1 0.9 D = 1.0 0.6 T 0.3 D = tp/T TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Junction Capacitance (pF) D = 0.3 D = 0.2 Average Power Loss (W) 30 Percent of Rated Peak Reverse Voltage (%) Lead Temperature (°C) tp 0 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 100 100 TJ = 150 °C 10 TJ = 125 °C 1 TJ = 25 °C TJ = -40 °C 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 20 Junction to Ambient 10 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 29-Jan-2019 Document Number: 88986 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS3P3L, SS3P4L www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMPC (TO-277A) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC® TO-277A Revision: 29-Jan-2019 Document Number: 88986 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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