SS3P4
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Vishay General Semiconductor
High Current Density Surface Mount Schottky Rectifiers
FEATURES
eSMP ® Series
• Very low profile - typical height of 1.0 mm
Available
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per
LF maximum peak of 260 °C
SMP (DO-220AA)
Cathode
J-STD-020,
• AEC-Q101 qualified
Anode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
DESIGN SUPPORT TOOLS
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Models
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
Available
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
40 V
IFSM
50 A
EAS
11.25 mJ
VF
0.50 V
TJ max.
150 °C
Package
SMP (DO-220AA)
Circuit configuration
Single
Case: SMP (DO-220AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS3P4
Maximum repetitive peak reverse voltage
VRRM
40
V
Maximum average forward rectified current (fig. 1)
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
IFSM
50
A
Device marking code
Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 10 mH
Voltage rate of change (rated VR)
Operating junction and storage temperature range
UNIT
34
EAS
11.25
mJ
dV/dt
10 000
V/μs
TJ, TSTG
-55 to +150
°C
Revision: 13-Aug-2018
Document Number: 88954
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS3P4
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
IF = 3 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
Maximum reverse current at rated VR
TJ = 125 °C
Typical junction capacitance
SYMBOL
VF (1)
TYP.
MAX.
0.55
0.60
0.50
0.55
-
150
μA
7.5
15
mA
IR (2)
4.0 V, 1 MHz
CJ
UNIT
V
130
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
Typical thermal resistance (1)
SYMBOL
SS3P4
RJA (1)
85
RJL (1)
15
RJC (1)
20
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 15 mm x 15 mm copper pad areas. R
JL is measured
at the terminal of cathode band. RJC is measured at the top center of the body
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SS3P4-M3/84A
0.024
84A
3000
7" diameter plastic tape and reel
SS3P4-M3/85A
0.024
85A
10 000
13" diameter plastic tape and reel
SS3P4HM3/84A (1)
0.024
84A
3000
7" diameter plastic tape and reel
SS3P4HM3/85A (1)
0.024
85A
10 000
13" diameter plastic tape and reel
Note
(1) Automotive grade
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified)
50
Peak Forward Surge Current (A)
Average Forward Rectified Current (A)
3.0
2.5
2.0
1.5
1.0
TL Measured
at the Cathode Band Terminal
0.5
40
30
20
10
0
0
80
90
100
110
120
130
140
150
1
10
100
Lead Temperature (°C)
Number of Cycles at 50 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 13-Aug-2018
Document Number: 88954
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS3P4
www.vishay.com
Vishay General Semiconductor
1000
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
1
100
TJ = 125 °C
10
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
0.1
10
100
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
1000
Transient Thermal Impedance (°C/W)
100 000
Instantaneous Reverse Leakage
Current (µA)
1
Instantaneous Forward Voltage (V)
TJ = 150 °C
10 000
TJ = 125 °C
1000
100
TJ = 25 °C
10
1
0.1
10
20
30
40
50
60
70
80
90
100
10
1
0.01
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMP (DO-220AA)
0.012 (0.30) REF.
Cathode Band
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.142 (3.61)
0.126 (3.19)
0.036 (0.91)
0.024 (0.61)
0.103 (2.60)
0.087 (2.20)
0.032 (0.80)
0.016 (0.40)
0.158 (4.00)
0.146 (3.70)
0.105
(2.67)
0.013 (0.35)
0.004 (0.10)
0.025 0.030
(0.635) (0.762)
0.045 (1.15)
0.033 (0.85)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
0.100
(2.54)
0.050
(1.27)
Revision: 13-Aug-2018
Document Number: 88954
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17
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Document Number: 91000