SST5484-E3

2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5484 −0.3 to −3 2N/SST5485 −0.5 to −4 −25 3 1 −25 3.5 2N/SST5486 −2 to −6 4 −25 4 8 FEATURES BENEFITS D Excellent High-Frequency Gain: Gps 13 dB (typ) @ 400 MHz − 5485/6 D Very Low Noise: 2.5 dB (typ) @ 400 MHz − 5485/6 D Very Low Distortion D High AC/DC Switch Off-Isolation D D D D D APPLICATIONS Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION The 2N/SST5484 series consists of n-channel JFETs designed to provide high-performance amplification, especially at high frequencies up to and beyond 400 MHz. The 2N series, TO-226AA (TO-92), and SST series, TO-236 (SOT-23), packages provide low-cost options and are available with tape-and-reel to support automated assembly (see Packaging Information). TO-236 (SOT-23 ) TO-226AA (TO-92) D 1 D 1 S 2 S 2 G 3 3 Top View 2N5484 2N5485 2N5486 G Top View SST5484 (H4)* SST5485 (H5)* SST5486 (H6)* *Marking Code for TO-236 For applications information see AN102 and AN105. Document Number: 70246 S-50148—Rev. G, 24-Jan-05 www.vishay.com 1 2N/SST5484 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 150_C Notes a. Derate 2.8 mW/_C above 25_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW SPECIFICATIONS FOR 2N SERIES (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N5484 Parameter Symbol Test Conditions Typa V(BR)GSS IG = −1
A , VDS = 0 V −35 VGS(off) VDS = 15 V, ID = 10 nA Min −25 Max 2N5485 Min 2N5486 Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating IDSS IGSS Currentc Gate-Source Forward Voltagec −0.3 VDS = 15 V, VGS = 0 V VGS = −20 V, VDS = 0 V TA = 100_C 1 −25 −25 V −3 −0.5 −4 −2 −6 5 4 10 8 20 −0.002 −1 −1 −1 −0.2 −200 −200 −200 mA nA IG VDG = 10 V, ID = 1 mA −20 pA VGS(F) IG = 10 mA , VDS = 0 V 0.8 V Dynamic Common-Source Forward TransconductanceNO TAG gfs Common-Source Output ConductanceNO TAG gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Common-Source Output Capacitance Coss Equivalent Input Noise Voltagec en 3 VDS = 15 V, VGS = 0 V f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 15 V, VGS = 0 V f = 100 Hz 6 3.5 7 4 8 mS
S 50 60 75 2.2 5 5 5 0.7 1 1 1 1 2 2 2 pF nV⁄ √Hz 10 High-Frequency Common-Source Transconductanced Yfs(RE) f (RE) Common-Source Output Conductanced Yos(RE) (RE) Common-Source Input Conductanced Yis(RE) i (RE) C Common-Source S Power P Noise Figure g d Gain G i d VDS = 15 V VGS = 0 V 2 5.5 f = 400 MHz 5.5 f = 100 MHz 45 f = 400 MHz 65 f = 100 MHz 0.05 f = 400 MHz 0.8 VDS = 15 V, ID = 1 mA f = 100 MHz Gps NF VDS = 15 V ID = 4 mA 20 2.5 3 mS 3.5 75 100 100 1 1 0.1 16
S mS 25 f = 100 MHz 21 18 30 18 30 f = 400 MHz 13 10 20 10 20 VDS = 15 V, VGS = 0 V RG = 1 M , f = 1 kHz 0.3 2.5 VDS = 15 V, ID = 1 mA RG = 1 k , f = 100 MHz 2 3 VDS = 15 V ID = 4 mA RG = 1 k www.vishay.com f = 100 MHz 2.5 2.5 f = 100 MHz 1 2 2 f = 400 MHz 2.5 4 4 dB Document Number: 70246 S-50148—Rev. G, 24-Jan-05 2N/SST5484 Series Vishay Siliconix SPECIFICATIONS FOR SST SERIES (TA = 25_C UNLESS OTHERWISE NOTED) Limits SST5484 Parameter Symbol Test Conditions Typb V(BR)GSS IG = −1
A , VDS = 0 V −35 VGS(off) VDS = 15 V, ID = 10 nA Min −25 Max SST5485 Min Max SST5486 Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Gate-Source Forward Voltagec IDSS IGSS −0.3 VDS = 15 V, VGS = 0 V VGS = −20 V, VDS = 0 V 1 −25 −25 V −3 −0.5 −4 −2 −6 5 4 10 8 20 −0.002 −1 −1 −1 −0.2 −200 −200 −200 TA = 100_C mA nA IG VDG = 10 V, ID = 1 mA −20 pA VGS(F) IG = 10 mA , VDS = 0 V 0.8 V Dynamic Common-Source Forward TransconductanceNO TAG gfs Common-Source Output ConductanceNO TAG gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Common-Source Output Capacitance Coss Equivalent Input Noise Voltagec en 3 VDS = 15 V, VGS = 0 V f = 1 kHz 6 50 3.5 7 60 4 8 mS 75
S 2.2 VDS = 15 V, VGS = 0 V f = 1 MHz 0.7 pF 1 VDS = 15 V, VGS = 0 V f = 100 Hz 10 nV⁄ √Hz High-Frequency Common-Source Transconductance Yfs f Common-Source Output Conductance Yos Common-Source Input Conductance Yis i Common-Source Power Gain Noise Figure g VDS = 15 V VGS = 0 V f = 100 MHz 5.5 f = 400 MHz 5.5 f = 100 MHz 45 f = 400 MHz 65 f = 100 MHz 0.05 f = 400 MHz 0.8 VDS = 15 V, ID = 1 mA f = 100 MHz Gps NF VDS = 15 V ID = 4 mA f = 100 MHz 21 f = 400 MHz 13 0.3 VDS = 15 V, ID = 1 mA RG = 1 k , f = 100 MHz 2 f = 100 MHz 1 f = 400 MHz 2.5 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300
s duty cycle v3%. c. This parameter not registered with JEDEC. d. Not a production test.
S mS 20 VDS = 15 V, VGS = 0 V RG = 1 M , f = 1 kHz VDS = 15 V ID = 4 mA RG = 1 k mS dB NH Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 70246 S-50148—Rev. G, 24-Jan-05 www.vishay.com 3 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 10 6 gfs 12 4 8 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 4 2 0 0 0 −2 −4 −6 −8 VGS(off) − Gate-Source Cutoff Voltage (V) IGSS @ 125_C ID = 5 mA 1 mA 10 pA 0.1 mA TA = 25_C 1 pA 200 40 100 20 0 0 gfs − Forward Transconductance (mS) TA = 125_C 100 pA IGSS @ 25_C 0.1 pA −2 −4 −6 −8 VGS(off) − Gate-Source Cutoff Voltage (V) 4 8 12 16 VDG − Drain-Gate Voltage (V) Common-Source Forward Transconductance vs. Drain Current TA = −55_C 6 25_C 4 125_C 2 0.1 1 ID − Drain Current (mA) Output Characteristics 10 Output Characteristics 15 VGS(off) = −2 V VGS(off) = −3 V 8 12 VGS = 0 V ID − Drain Current (mA) ID − Drain Current (mA) VDS = 10 V f = 1 kHz 8 20 10 −0.2 V 6 −0.4 V 4 −0.6 V −0.8 V −1.0 V −1.2 V 2 0 2 4 6 −1.4 V 8 VDS − Drain-Source Voltage (V) www.vishay.com 4 −10 0 0 0 60 gos VGS(off) = −3 V 0.1 mA 1 nA rDS 300 10 1 mA 80 0 ID = 5 mA 10 nA gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 400 −10 Gate Leakage Current 100 nA IG − Gate Leakage rDS(on) − Drain-Source On-Resistance ( Ω ) 8 rDS @ ID = 300
A, VGS = 0 V gos − Output Conductance (µS) IDSS 100 500 gfs − Forward Transconductance (mS) IDSS − Saturation Drain Current (mA) 20 16 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage VGS = 0 V −0.3 V 9 −0.6 V −0.9 V 6 −1.2 V −1.5 V 3 −1.8 V 10 0 0 2 4 6 8 10 VDS − Drain-Source Voltage (V) Document Number: 70246 S-50148—Rev. G, 24-Jan-05 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics Transfer Characteristics 10 10 VGS(off) = −2 V VDS = 10 V VGS(off) = −3 V 8 TA = −55_C ID − Drain Current (mA) ID − Drain Current (mA) 8 25_C 6 125_C 4 TA = −55_C 25_C 6 125_C 4 2 2 0 0 0 −0.4 −0.8 −1.2 −1.6 VGS − Gate-Source Voltage (V) 0 −2 Transconductance vs. Gate-Source Voltage VGS(off) = −2 V VDS = 10 V f = 1 kHz TA = −55_C 25_C 4 −1.2 −1.8 −2.4 VGS − Gate-Source Voltage (V) −3 Transconductance vs. Gate-Source Voltage 8 6 −0.6 10 gfs − Forward Transconductance (mS) gfs − Forward Transconductance (mS) 10 125_C 2 VGS(off) = −3 V VDS = 10 V f = 1 kHz 8 TA = −55_C 6 25_C 4 125_C 2 0 0 0 −0.4 −0.8 −1.2 −1.6 −2 0 VGS − Gate-Source Voltage (V) −0.6 −1.2 −1.8 −2.4 −3 VGS − Gate-Source Voltage (V) On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current 300 100 g fs R L AV + 1 ) R g L os TA = 25_C 240 80 VGS(off) = −2 V AV − Voltage Gain rDS(on) − Drain-Source On-Resistance ( Ω ) VDS = 10 V 180 −3 V 120 60 Assume VDD = 15 V, VDS = 5 V RL + 60 40 10 V ID VGS(off) = −2 V 20 −3 V 0 0.1 Document Number: 70246 S-50148—Rev. G, 24-Jan-05 1 ID − Drain Current (mA) 10 0 0.1 1 ID − Drain Current (mA) 10 www.vishay.com 5 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage 5 3 Crss − Reverse Feedback Capacitance (pF) Ciss − Input Capacitance (pF) f = 1 MHz 4 3 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage VDS = 0 V 2 10 V 1 f = 1 MHz 2.4 1.8 VDS = 0 V 1.2 10 V 0.6 0 0 0 100 −4 −8 −12 −16 VGS − Gate-Source Voltage (V) 0 −20 Input Admittance TA = 25_C VDS = 15 V VGS = 0 V Common Source 10 gfs (mS) gis 1 −bfs 1 0.1 100 200 500 0.1 100 1000 f − Frequency (MHz) TA = 25_C VDS = 15 V VGS = 0 V Common Source 200 500 1000 f − Frequency (MHz) Reverse Admittance 10 −20 TA = 25_C VDS = 15 V VGS = 0 V Common Source bis (mS) −8 −12 −16 VGS − Gate-Source Voltage (V) Forward Admittance 100 10 −4 Output Admittance 10 TA = 25_C VDS = 15 V VGS = 0 V Common Source −brs bos 1 (mS) (mS) 1 −grs 0.1 0.1 0.01 100 www.vishay.com 6 gos 0.01 200 500 f − Frequency (MHz) 1000 100 200 500 f − Frequency (MHz) 1000 Document Number: 70246 S-50148—Rev. G, 24-Jan-05 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 20 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V VGS(off) = −3 V 16 gos − Output Conductance (µS) en − Noise Voltage nV / Hz VGS(off) = −3 V Output Conductance vs. Drain Current 20 12 8 ID = 5 mA 4 VDS = 10 V f = 1 kHz 16 TA = −55_C 12 25_C 8 125_C 4 ID = IDSS 0 0 10 100 1k f − Frequency (Hz) 10 k 100 k 0.1 1 10 ID − Drain Current (mA) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70246. Document Number: 70246 S-50148—Rev. G, 24-Jan-05 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1