ST083S12PFP0

Bulletin I25185 rev. B 03/94 ST083S SERIES Stud Version INVERTER GRADE THYRISTORS Features 85A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters ST083S Units 85 A 85 °C 135 A @ 50Hz 2450 A @ 60Hz 2560 A @ 50Hz 30 KA2s @ 60Hz 27 KA2s V DRM/V RRM 400 to 1200 V tq range (*) 10 to 30 µs - 40 to 125 °C IT(AV) @ TC IT(RMS) ITSM I2t TJ case style TO-209AC (TO-94) (*) t = 10 to 20µs for 400 to 800V devices q t = 15 to 30µs for 1000 to 1200V devices q www.irf.com 1 ST083S Series Bulletin I25185 rev. B 03/94 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM/V RRM, maximum VRSM , maximum I DRM/I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 400 500 Type number 04 ST083S 08 800 900 10 1000 1100 12 1200 1300 30 Current Carrying Capability ITM Frequency ITM ITM 180 el 180 el 50Hz 400Hz 210 200 120 120 1000Hz 150 2500Hz 70 Recovery voltage Vr Voltage before turn-on Vd 50 50 50 Units 100µs o o 330 350 270 210 80 320 190 630 400 25 220 85 250 100 50 50 V DRM 2540 1190 V DRM 1930 810 50 VDRM A V Rise of on-state current di/dt 50 50 - - - - A/µs Case temperature 60 85 60 85 60 85 °C Equivalent values for RC circuit 22Ω / 0.15µF 22Ω / 0.15µF 22Ω / 0.15µF On-state Conduction Parameter IT(AV) ST083S Units Max. average on-state current 85 A @ Case temperature 85 °C IT(RMS) Max. RMS on-state current ITSM 135 Max. peak, one half cycle, 2450 non-repetitive surge current 2560 Maximum I2t for fusing t = 10ms A 100% VRRM t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = TJ max t = 8.3ms reapplied KA2s 19 2 reapplied t = 10ms 30 21 Maximum I2√t for fusing No voltage t = 8.3ms 2160 27 I 2 √t 180° conduction, half sine wave DC @ 77°C case temperature 2060 I 2t Conditions 300 KA2 √s t = 10ms 100% VRRM t = 8.3ms reapplied t = 0.1 to 10ms, no voltage reapplied www.irf.com ST083S Series Bulletin I25185 rev. B 03/94 On-state Conduction Parameter V TM ST083S Max. peak on-state voltage 2.15 V T(TO)1 Low level value of threshold 1.46 voltage V T(TO)2 High level value of threshold voltage r t1 Low level value of forward V mΩ IH 600 IL Typical latching current 1000 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x I T(AV)), TJ = TJ max. 2.32 High level value of forward slope resistance Maximum holding current Conditions ITM= 300A, TJ = TJ max, tp = 10ms sine wave pulse 1.52 slope resistance rt 2 Units (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), T J = TJ max. 2.34 mA T J = 25°C, I T > 30A T J = 25°C, VA = 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt ST083S Max. non-repetitive rate of rise 1000 of turned-on current t t Typical delay time d Conditions A/µs TJ = TJ max, VDRM = rated VDRM Min 10 Max 30 ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp = 1µs 0.80 Max. turn-off time (*) q Units µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 100A, commutating di/dt = 10A/µs VR = 50V, tp = 200µs, dv/dt: see table in device code (*) t = 10 to 20µs for 400 to 800V devices; t = 15 to 30µs for 1000 to 1200V devices. q q Blocking Parameter ST083S Units Conditions TJ = TJ max., linear to 80% V DRM, higher value available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 30 mA ST083S Units TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power PG(AV) Maximum average gate power 5 IGM Max. peak positive gate current 5 +VGM Maximum peak positive gate voltage 20 -V GM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger W T J = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V T J = TJ max, tp ≤ 5ms 200 mA 3 V T J = 25°C, V A = 12V, Ra = 6Ω IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V www.irf.com Conditions 40 T J = TJ max, rated VDRM applied 3 ST083S Series Bulletin I25185 rev. B 03/94 Thermal and Mechanical Specifications Parameter ST083S Units TJ Max. junction operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, junction to case 0.195 RthCS Max. thermal resistance, case to heatsink 0.08 T Mounting torque, ± 10% 15.5 Nm (137) (Ibf-in) wt Approximate weight Case style Conditions °C DC operation K/W 14 Nm (120) (Ibf-in) 130 g Mounting surface, smooth, flat and greased Non lubricated threads Lubricated threads TO-209AC (TO-94) See Outline Table ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.034 0.025 120° 0.041 0.042 90° 0.052 0.056 60° 0.076 0.079 30° 0.126 0.127 Conditions T J = TJ max. K/W Ordering Information Table Device Code ST 08 3 S 12 P F K 0 1 2 3 4 5 6 7 8 9 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - S = Compression bonding Stud 5 - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) 6 - P = Stud Base 1/2" 20UNF 7 - Reapplied dv/dt code (for t q Test Condition) 8 - t q code 9 - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) 10 - Critical dv/dt: None = 500V/µsec (Standard value) L 4 dv/dt - tq combinations available dv/dt (V/µs) 10 q 12 up to 800V 15 18 20 t (µs) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) = 1000V/µsec (Special selection) 10 tq(µs) 15 18 only for 20 1000/1200V 25 30 *Standard part number. All other types available 20 CN CM CL CP CK 50 DN DM DL DP DK 100 EN EM EL EP EK 200 FN * FM * FL FP * FK * 400 HN HM HL HP HK CL CP CK CJ -- -DP DK DJ DH -EP EK EJ EH -FP * FK * FJ FH --HK HJ HH only on request. www.irf.com ST083S Series Bulletin I25185 rev. B 03/94 Outline Table CERAMIC HOUSING 0.7 9) 9.5 C.S. 16mm 2 170 (6.69 ) (.025 s.i.) C.S. 0.4 mm 2 (.0006 s.i.) Fast-on Terminals RED CATHODE AMP. 280000-1 REF-250 WHITE GATE 215 (8.46) RED SHRINK 10 (0.39) WHITE SHRINK MAX. 21 (0.83) 22.5 (0.88) MAX. DIA. 12. 5 (0.49) MAX. 29 (1 .14) MAX. 70 (2.75) MIN. 157 (6.18) 20 ( FLEXIBLE LEAD RED SILICON RUBBER MI N. 2.6 (0.10) MAX. 4.3 (0.17) DIA (0. 37 )M IN . 16.5 (0.65) MAX. 8.5 (0.33) DIA. SW 27 1/2"-20UNF-2A Case Style TO-209AC (TO-94) 29.5 (1.16) All dimensions in millimeters (inches) MAX. CERAMIC HOUSING FLAG TERMINALS 22.5 DIA. 5.2 (0.20) DIA. (0.89) MAX. 10 (0.39 ) Case Style TO-208AD (TO-83) 29 (1. 14) MA X. 10 (0.39) 7.5 (0.30) MAX. M AX. 21(0.83 ) All dimensions in millimeters (inches) 16.5 SW 27 1/2"-20UNF-2A (0.6 5) 1 2.5 (0.49) 49 (1.93) 46 (1.81) 1.5 (0.06) DIA. 2.4 (0.09) 29.5 (1.16) www.irf.com 5 ST083S Series 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Bulletin I25185 rev. B 03/94 ST083S Series R thJC (DC) = 0.195 K/W 120 110 Conduction Angle 100 30° 90 60° 90° 120° 180° 80 0 10 20 30 40 50 60 70 80 90 130 ST083S Series R thJC (DC) = 0.195 K/W 120 110 Conduction Period 100 90 30° 80 90° 120° 180° DC 70 0 20 Average On-state Current (A) 40 60 80 100 120 140 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 180 =0 .1 W K/ /W A W -D K/ W K/ 120 0. 4K 0 .5 W K/ 140 3 0. 180° 120° 90° 60° 30° 160 hS R t 2 0. e lt 100 aR Maximum Average On-state Power Loss (W) 60° 0.8 RMS Limit 80 K/W 1. 2 K 60 Conduction Angle 40 /W ST083S Series TJ = 125°C 20 0 0 10 20 30 40 50 60 70 80 90 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Average On-state Current (A) 250 DC 180° 120° 90° 60° 30° K /W R Conduction Period /W ta el 100 RMS Limit -D 0. 5 W K/ 0.4 K/ W 1 0. 0. 3K = 150 0. 2 SA th 200 R Maximum Average On-state Power Loss (W) Fig. 3 - On-state Power Loss Characteristics K/ W 0. 8 K /W 1. 2 K/W ST083S Series TJ = 125°C 50 0 0 20 40 60 80 100 120 Average On-state Current (A) 140 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-state Power Loss Characteristics 6 www.irf.com ST083S Series Peak Half Sine Wave On-state Current (A) 2200 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 2000 1800 1600 1400 1200 ST083S Series 1000 1 10 Peak Half Sine Wave On-state Current (A) Bulletin I25185 rev. B 03/94 100 2600 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C 2200 No Voltage Reapplied Rated VRRM Reapplied 2000 2400 1800 1600 1400 1200 ST083S Series 1000 0.01 0.1 Fig. 5 - Maximum Non-repetitive Surge Current TJ = 25°C 1000 TJ = 125°C ST083S Series 100 Fig. 6 - Maximum Non-repetitive Surge Current Transient Thermal Impedance Z thJC (K/W) Instantaneous On-state Current (A) 10000 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 1 Steady State Value R = 0.195 K/W thJ C (DC Operation) 0.1 ST083S Series 0.01 0.001 Instantaneous On-state Voltage (V) J 300 A 120 200 A 100 100 A 80 60 50 A 40 20 10 20 30 40 50 60 70 80 90 100 0.1 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristic Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Recovery Charge - Qrr (µC) 140 I TM = 500 A ST083S Series T = 125 °C 0.01 Square Wave Pulse Duration (s) Fig. 7 - On-state Voltage Drop Characteristics 160 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) 120 I TM = 500 A 110 100 300 A 90 200 A 80 100 A 70 50 A 60 50 40 ST083S Series TJ = 125 °C 30 20 10 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Rate Of Fall Of Forward Current - di/dt (A/µs) Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics www.irf.com 7 ST083S Series Bulletin I25185 rev. B 03/94 Peak On-state Current (A) 1E4 Snubber circuit R s = 22 ohms Cs = 0.15 µF V D = 80% V DRM Snubber circuit R s = 22 ohms Cs = 0.15 µF V D = 80% VDRM 1E3 2000 2500 3000 1500 1000 500 400 200 100 50 Hz 1000 400 200 500 1500 100 50 Hz 2000 1E2 2500 ST083S Series Sinusoidal pulse TC = 60°C tp 1E1 1E1 1E2 tp 1E1 1E41E1 1E4 1E3 ST083S Series Sinusoidal pulse TC = 85°C 3000 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics Peak On-stat e Current (A) 1E4 Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% V DRM ST083S Series Trapezoidal pulse TC = 85°C tp Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% VDRM di/dt = 50A/µs 1E3 2000 2500 1E2 1500 1000 200 500 400 500 400 200 100 50 Hz 1000 1500 3000 ST083S Series Trapezoidal pulse TC = 60°C di/dt = 50A/µs tp 1E1 1E1 100 50 Hz 1E2 2000 2500 1E4 1E1 1E41E1 1E3 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics Peak On-state Current (A) 1E4 Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% VDRM ST083S Series Trapezoidal pulse TC = 85°C tp Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% VDRM di/dt = 100A/µs 1E3 1000 500 400 200 100 50 Hz 500 1500 1E2 2000 2500 ST083S Series Trapezoidal pulse T C = 60°C 3000 tp 1E1 1E1 1E2 400 200 100 50 Hz 1000 di/dt = 100A/µs 1E3 1500 2000 2500 1E41E1 1E4 1E1 Pulse Basewidth (µs) 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics 8 www.irf.com ST083S Series Bulletin I25185 rev. B 03/94 1E4 ST083S Series Rectangular pulse 1E3 0.5 1 2 3 5 tp 10 di/dt = 50A/µs 20 joules per pulse 7.5 2 0.3 4 1 0.2 0.5 0.3 0.1 0.2 1E2 0.1 ST083S Series Sinusoidal pulse tp 1E1 1E1 1E2 1E1 1E41E1 1E4 1E3 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-state Energy Power Loss Characteristics 100 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr