ST103S08PFN0

Bulletin I25183 rev. B 03/94 ST103S SERIES Stud Version INVERTER GRADE THYRISTORS Features 105A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters ST103S Units 105 A 85 °C 165 A @ 50Hz 3000 A @ 60Hz 3150 A @ 50Hz 45 KA2s @ 60Hz 41 KA2s 400 to 800 V 10 to 25 µs - 40 to 125 °C IT(AV) @ TC IT(RMS) ITSM I2t V DRM/V RRM tq range TJ Document Number: 93665 case style TO-209AC (TO-94) www.vishay.com 1 ST103S Series Bulletin I25183 rev. B 03/94 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage VDRM /VRRM , maximum VRSM , maximum I DRM /IRRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 04 400 500 08 800 900 Type number ST103S 30 Current Carrying Capability ITM Frequency ITM ITM o 180 el 180oel Units 100µs 50Hz 400Hz 280 310 180 200 440 470 330 300 4730 2500 3630 1850 1000Hz 320 200 480 310 1530 1090 2500Hz 340 210 490 320 840 580 Recovery voltage Vr Voltage before turn-on Vd 50 50 50 50 50 Rise of on-state current di/dt 50 50 - - - - A/µs Case temperature 60 85 60 85 60 85 °C Equivalent values for RC circuit 22Ω / 0.15µF VDRM VDRM 50 V DRM 22Ω / 0.15µF A V 22Ω / 0.15µF On-state Conduction Parameter IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM ST103S Units 105 A 85 °C 165 Max. peak, one half cycle, 3000 non-repetitive surge current 3150 Maximum I2t for fusing DC @ 76°C case temperature A Document Number: 93665 reapplied t = 10ms 100% VRRM t = 8.3ms reapplied Sinusoidal half wave, 45 t = 10ms No voltage Initial TJ = TJ max 41 t = 8.3ms reapplied KA2s 29 Maximum I2√t for fusing No voltage t = 8.3ms 2650 32 I 2 √t 180° conduction, half sine wave t = 10ms 2530 I 2t Conditions 450 KA2 √s t = 10ms 100% VRRM t = 8.3ms reapplied t = 0.1 to 10ms, no voltage reapplied www.vishay.com 2 ST103S Series Bulletin I25183 rev. B 03/94 On-state Conduction Parameter V TM Max. peak on-state voltage V T(TO)1 Low level value of threshold ST103S 1.73 1.32 voltage V T(TO)2 High level value of threshold voltage r t1 Low level value of forward slope resistance V mΩ 600 IL Typical latching current 1000 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > x π x IT(AV)), TJ = TJ max. 1.40 IH Conditions ITM= 300A, TJ = TJ max, tp = 10ms sine wave pulse 1.35 High level value of forward slope resistance Maximum holding current rt 2 Units (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > x π x IT(AV)), TJ = TJ max. 1.30 mA T J = 25°C, I T > 30A T J = 25°C, VA = 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d tq Typical delay time Max. turn-off time ST103S 1000 Units Conditions A/µs TJ = TJ max, VDRM = rated VDRM 0.80 Min 10 Max 25 ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 100A, commutating di/dt = 10A/µs VR = 50V, tp = 200µs, dv/dt: see table in device code Blocking Parameter ST103S Units Conditions TJ = TJ max., linear to 80% V DRM, higher value available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 30 mA ST103S Units TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power PG(AV) Maximum average gate power 5 IGM Max. peak positive gate current 5 +VGM Maximum peak positive gate voltage 20 -V GM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger W TJ = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V T J = TJ max, tp ≤ 5ms 200 mA 3 V T J = 25°C, V A = 12V, Ra = 6Ω IGD Max DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V Document Number: 93665 Conditions 40 T J = TJ max, rated VDRM applied www.vishay.com 3 ST103S Series Bulletin I25183 rev. B 03/94 Thermal and Mechanical Specifications Parameter ST103S Max. junction operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, junction to case 0.195 RthCS Max. thermal resistance, case to heatsink 0.08 T Mounting torque, ± 10% J stg wt Approximate weight Case style Units Conditions °C DC operation K/W 15.5 Nm (137) (Ibf-in) 14 Nm (120) (Ibf-in) 130 g Mounting surface, smooth, flat and greased Non lubricated threads Lubricated threads TO-209AC (TO-94) See Outline Table ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.034 0.025 120° 0.040 0.042 90° 0.052 0.056 60° 0.076 0.079 30° 0.126 0.127 Conditions TJ = TJ max. K/W Ordering Information Table Device Code ST 10 1 2 3 N 0 1 Essential 2 3 -4 5 Thyristor 3 S Voltage = 4Fast Compression code: turn Code number 6 bonding x 100 7 Stud = V8 5partoff 9 RRM q S 08 P 10 -6(See 7 P = Voltage Reapplied Stud Base dv/dt Ratings 1/2" code 20UNF table) (for t -test 8 t condition) -code 9 dv/dt 0 = Eyelet -t terminals (Gate and Aux. Cathode Leads) q 10 F q combinations available dv/dt (V/µs) 20 50 100 10 CN DN EN 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 12 CM DM EM 2 = Flag terminals (For Cathode and Gate Terminals) 15 CL DL EL tq(µs) T 18 CP DP EP - Critical dv/dt: 20 CK DK EK None = 500V/µsec (Standard value) 25 ---L = 1000V/µsec (Special selection) *Standard part number. All other types available only on request. Document Number: 93665 200 FN * FM FL * FP FK -- 400 -HM HL HP HK HJ www.vishay.com 4 ST103S Series Bulletin I25183 rev. B 03/94 Outline Table CERAMIC HOUSING 9.5 20 (0. (0. 37 79) )M MI IN . N. 16.5 (0.65) MAX. 8.5 (0.33) DIA. 2.6 (0.10) MAX. 4.3 (0.17) DIA FLEXIBLE LEAD C.S. 16mm 2 (.025 s.i.) C.S. 0.4 mm 2 RED SILICON RUBBER 170 (6.69) 157 (6.18) (.0006 s.i.) Fast-on Terminals RED CATHODE AMP. 280000-1 REF-250 WHITE GATE 10 (0.39) WHITE SHRINK MAX. 22.5 (0.88) MAX. DIA. 21 (0.83) 12. 5 (0.49) MAX. 29 (1.14) MAX. 70 (2.75) MIN. 215 (8.46) RED SHRINK SW 27 1/2"-20UNF-2A Case Style TO-209AC (TO-94) 29.5 (1.16) All dimensions in millimeters (inches) MAX. CERAMIC HOUSING FLAG TERMINALS 22.5 DIA. 5.2 (0.20) DIA. (0.89) MAX. 10 (0.39) Case Style TO-208AD (TO-83) 29 (1.14) MAX. 10 (0.39) 7.5 (0.30) MAX . MAX. 21(0.83 ) All dimensions in millimeters (inches) 16.5 SW 27 1/2"-20UNF-2A (0.6 5) 1 2.5 (0.49) 49 (1.93) 46 (1.81) 1.5 (0.06) DIA. 2.4 (0.09) 29.5 (1.16) Document Number: 93665 www.vishay.com 5 ST103S Series Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperat ure (°C) Bulletin I25183 rev. B 03/94 130 ST103S Series R thJC (DC) = 0.195 K/W 120 110 Conduction Angle 100 90 30° 60° 90° 120° 180° 80 0 10 20 30 40 50 60 70 80 90 100 110 130 ST103S Series R thJC (DC) = 0.195 K/W 120 110 Conduction Period 100 90 90° 80 60° 180° DC 70 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A) Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Fig. 1 - Current Ratings Characteristics 180 A =0 W K/ .1 K/ W W elt -D K/ W K/ 120 0. 4 0 .5 W K/ 140 S R th 2 0. 180° 120° 90° 60° 30° 160 3 0. a 100 0.8 K/ W RMS Limit 80 1.2 K 60 R Maximum Average On-state Power Loss (W) 120° 30° /W Conduction Angle 40 ST103S Series TJ = 125°C 20 0 0 10 20 30 40 50 60 70 80 90 100110 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 260 DC 180° 120° 90° 60° 30° 240 SA th R 0 .8 Conduction Period W ta 100 RMS Limit 80 60 40 20 el 0.5 120 -D 0 .4 K/ W K/ W K/ 0 .3 1 0. 0. 2 = 220 200 180 160 140 R Maximum Average On-st ate Power Loss (W) Fig. 3 - On-state Power Loss Characteristics K/ W K/ W K /W 1 .2 K /W ST103S Series TJ = 125°C 0 0 20 40 60 80 100 120 140 160 180 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-state Power Loss Characteristics Document Number: 93665 www.vishay.com 6 ST103S Series Peak Half Sine Wave On-state Current (A) 2800 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 2600 2400 2200 2000 1800 1600 1400 ST103S Series 1200 1 10 Peak Half Sine Wave On-state Current (A) Bulletin I25183 rev. B 03/94 100 3000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 2600 Initial TJ = 125°C No Voltage Reapplied 2400 Rated VRRMReapplied 2800 2200 2000 1800 1600 ST103S Series 1400 1200 0.01 0.1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-repetitive Surge Current TJ = 25°C TJ = 125°C 1000 ST103S Series 100 1 2 3 4 5 Fig. 6 - Maximum Non-repetitive Surge Current Transient Thermal Impedance Z thJC (K/W) Instantaneous On-state Current (A) 10000 6 1 Steady State Value R thJ C = 0.195 K/W (DC Operation) 0.1 ST103S Series 0.01 0.001 ST103S Series TJ = 125 °C 300 A 120 200 A 100 100 A 80 60 50 A 40 20 10 20 30 40 50 60 70 80 90 100 Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Recovery Charge - Qrr (µC) 140 0.1 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 7 - On-state Voltage Drop Characteristics I TM = 500 A 0.01 Square Wave Pulse Duration (s) Instantaneous On-state Voltage (V) 160 1 Pulse Train Duration (s) 120 I TM = 500 A 110 100 300 A 90 200 A 80 100 A 70 50 A 60 50 40 ST103S Series TJ = 125 °C 30 20 10 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Rate Of Fall Of Forward Current - di/dt (A/µs) Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics Document Number: 93665 www.vishay.com 7 ST103S Series Bulletin I25183 rev. B 03/94 Peak On-state Current (A) 1E4 Snubber circuit R s = 22 ohms Cs = 0.15 µF V D = 80% V DRM 1E3 10000 5000 2500 1000 200 100 400 tp Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% VDRM 50 Hz 10000 5000 2500 1000 1E2 200 400 100 50 Hz ST103S Series Sinusoidal pulse TC = 60°C tp 1E2 1E1 ST103S Series Sinusoidal pulse TC = 85°C 1E1 1E4 1E41E1 1E3 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics Peak On-state Current (A) 1E4 Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% VDRM ST103S Series Trapezoidal pulse TC = 60°C di/dt = 50A/µs Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% VDRM ST103S Series Trapezoidal pulse TC = 85°C di/dt = 50A/µs tp 1E3 5000 2500 1500 1E2 1E1 1000 400 1E2 200 100 50 Hz 5000 2500 1500 1000 400 1E1 1E4 1E41E1 1E3 1E2 200 100 1E3 50 Hz 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics Peak On-state Current (A) 1E4 Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% VDRM ST103S Series Trapezoidal pulse TC = 60°C di/dt = 100A/µs tp Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% VDRM ST103S Series Trapezoidal pulse TC = 85°C di/dt = 100A/µs tp 1E3 5000 10000 1E2 1E1 2500 1500 1000 1E2 400 200 1E3 100 50 Hz 10000 5000 2500 1500 1000 1E1 1E4 1E41E1 1E2 400 200 1E3 100 50 Hz 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics Document Number: 93665 www.vishay.com 8 ST103S Series Bulletin I25183 rev. B 03/94 1E5 tp di/dt = 50A/µs 1E4 1E3 0.1 0.2 0.5 1 2 3 5 10 20 jo ules per pulse 20 joules per pulse 1 0.5 2 3 5 10 0.2 0.1 1E2 ST103S Series Sinusoidal pulse tp 1E1 1E1 1E2 1E1 1E4 1E41E1 1E3 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-state Energy Power Loss Characteristics 100 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr