SUB75P03-07-E3

SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available TO-263 TO-220AB S G DRAIN connected to TAB D S Top View SUB75P03-07 G G D S Top View SUP75P03-07 Ordering Information: SUB75P03-07 (TO-263) SUB75P03-07-E3 (TO-263, Lead (Pb)-free) SUP75P03-07 (TO-220AB) SUP75P03-07-E3 (TO-220AB, Lead (Pb)-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 125 °C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation L = 0.1 mH TC = 25 °C (TO-220AB and TO-263) TA = 25 °C (TO-263)c Operating Junction and Storage Temperature Range Symbol Limit Unit VGS ± 20 V ID - 75a - 65 IDM - 240 IAR - 60 EAR 180 PD 187d 3.75 A mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mount (TO-263)c Free Air (TO-220AB) Junction-to-Case RthJA RthJC 40 62.5 °C/W 0.8 Notes: a. Package limited. b. Duty cycle  1 %. c. When mounted on 1" square PCB (FR-4 material). d. See SOA curve for voltage derating. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71109 S10-2429-Rev. E, 25-Oct-10 www.vishay.com 1 SUB75P03-07, SUP75P03-07 Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. VDS VGS = 0 V, ID = - 250 µA - 30 VGS(th) VDS = VGS, ID = - 250 µA -1 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V VDS = - 30 V, VGS = 0 V -1 Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 30 V, VGS = 0 V, TJ = 175 °C - 250 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage On-State Drain Currenta ID(on) VDS = -5 V, VGS = - 10 V ± 100 - 120 VGS = - 10 V, ID = - 30 A Drain-Source On-State Resistancea RDS(on) Forward Transconductance VGS = - 10 V, ID = - 30 A, TJ = 125 °C 0.010 0.013 VDS = - 15 V, ID = - 75 A nA µA 0.007 VGS = - 10 V, ID = - 30 A, TJ = 175 °C gfs V A 0.0055 VGS = - 4.5 V, ID = - 20 A a -3 0.008  0.010 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Turn-On Delay Timec td(on) Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and tr td(off) 9000 VGS = 0 V, VDS = - 25 V, f = 1 MHz pF 715 160 VDS = - 15 V, VGS = - 10 V, ID = - 75 A 240 32 nC 30 VDD = - 15 V, RL = 0.2  ID  - 75 A, VGEN = - 10 V, Rg = 2.5  tf Characteristicsb 1565 25 40 225 360 150 240 210 340 (TC = 25 °C) IS - 75 Pulsed Current ISM - 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge ns IF = - 75 A, VGS = 0 V trr IRM(REC) Qrr IF = - 75 A, dI/dt = 100 A/µs A - 1.2 - 1.5 V 55 100 ns 2.5 5 A 0.07 0.25 µC Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71109 S10-2429-Rev. E, 25-Oct-10 SUB75P03-07, SUP75P03-07 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 250 TC = - 55 °C VGS = 10 V thru 6 V 160 I D - Drain Current (A) I D - Drain Current (A) 200 5V 150 100 4V 25 °C 125 °C 120 80 40 50 3V 0 0 0 2 4 6 8 0 10 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6 0.030 150 TC = - 55 °C RDS(on) - On-Resistance () g fs - Transconductance (S) 0.025 120 25 °C 125 °C 90 60 30 0.015 VGS = 4.5 V 0.010 VGS = 10 V 0.005 0 0 0 20 40 60 80 0 100 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 120 20 10 000 VGS - Gate-to-Source Voltage (V) 12 000 C - Capacitance (pF) 0.020 Ciss 8000 6000 4000 Coss 2000 Crss 0 0 VDS = 15 V ID = 75 A 16 12 8 4 0 6 12 18 24 30 0 50 100 150 200 250 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 71109 S10-2429-Rev. E, 25-Oct-10 300 www.vishay.com 3 SUB75P03-07, SUP75P03-07 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.8 100 VGS = 10 V ID = 30 A TJ = 150 °C I S - Source Current (A) 1.2 (Normalized) RDS(on) - On-Resistance 1.5 0.9 0.6 10 TJ = 25 °C 0.3 0 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 45 ID = 250 µA IAV (A) at TA = 25 °C 40 V DS (V) I Dav (a) 100 10 IAV (A) at TA = 150 °C 1 30 0.1 0.00001 0.0001 0.001 0.01 0.1 tin (s) Avalanche Current vs. Time www.vishay.com 4 35 1 25 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 71109 S10-2429-Rev. E, 25-Oct-10 SUB75P03-07, SUP75P03-07 Vishay Siliconix THERMAL RATINGS 1000 90 75 100 µs I D - Drain Current (A) I D - Drain Current (A) 100 60 45 30 Limited by RDS(on)* 10 10 ms 100 ms DC 1 TC = 25 °C Single Pulse 15 0 0 25 50 75 100 125 150 175 0.1 0.1 TC - Case Temperature (°C) 1 * VGS Maximum Avalanche and Drain Current vs. Case Temperature 1 ms 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71109. Document Number: 71109 S10-2429-Rev. E, 25-Oct-10 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000