SUD08P06-155L-GE3
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Vishay Siliconix
P-Channel 60 V (D-S) MOSFET
FEATURES
DPAK (TO-252)
(
• TrenchFET® power MOSFETs
Drain connected to tab
• Material categorization:
for definitions of compliance please
see www.vishay.com/doc?99912
S
S
D
G
G
Top View
PRODUCT SUMMARY
VDS (V)
-60
RDS(on) max. () at VGS = -10 V
0.155
RDS(on) max. () at VGS = -4.5 V
0.280
Qg typ. (nC)
12.5
ID (A)
-8.4
Configuration
D
P-Channel MOSFET
Single
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and halogen-free
SUD08P06-155L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Gate-source voltage
Continuous drain current (TJ = 150 °C)
TC = 25 °C
TC = 100 °C
Pulsed drain current
Continuing source current (diode conduction)
Avalanche current
Single pulse avalanche energy
Maximum power dissipation
L = 0.1 mH
TC = 25 °C
TA = 25 °C
Operating junction and storage temperature range
SYMBOL
LIMIT
UNIT
VGS
± 20
V
-8.2
ID
-5.2
IDM
-18
IS
-8.4
IAS
-12
EAS
A
7.2
mJ
20.8 a
PD
W
1.7 b
TJ, Tstg
-55 to +150
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient b
Junction-to-case
SYMBOL
t 10 s
Steady state
RthJA
RthJC
TYPICAL
MAXIMUM
20
25
62
75
5
6
UNIT
°C/W
Notes
a. See SOA curve for voltage derating
b. Surface mounted on 1" x 1" FR-4 board
S13-0788-Rev. A, 15-Apr-13
Document Number: 62843
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD08P06-155L-GE3
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Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP. a
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate threshold voltage
Gate-body leakage
Zero gate voltage drain current
On-state drain current b
Drain-source on-state resistance b
Forward transconductance b
VDS
VGS = 0 V, ID = -250 μA
-60
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-1
-2
-
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
VDS = -60 V, VGS = 0 V
-
-
-1
VDS = -60 V, VGS = 0 V, TJ = 125 °C
-
-
-50
VDS = -60 V, VGS = 0 V, TJ = 150 °C
-
-
-150
VDS = -5 V, VGS = -10 V
-10
-
-
VGS = -10 V, ID = -5 A
-
0.125
0.155
VGS = -10 V, ID = -5 A, TJ = 125 °C
-
-
0.280
VGS = -10 V, ID = -5 A, TJ = 150 °C
-
-
0.350
VGS = -4.5 V, ID = -2 A
-
0.158
0.280
VDS = -15 V, ID = -5 A
-
8
-
-
450
-
-
65
-
-
40
-
-
12.5
19
-
2.3
-
-
3.2
-
f = 1 MHz
-
8
-
-
5
10
VDD = -30 V, RL = 3.57
ID -8.4 A, VGEN = -10 V, Rg = 2.5
-
14
25
-
15
25
-
7
12
IDSS
ID(on)
RDS(on)
gfs
V
nA
μA
A
S
Dynamic
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay
time c
Rise time c
Turn-off delay time c
Fall time c
VDS = -25 V, VGS = 0 V, f = 1 MHz
VDS = -30 V, VGS = -10 V, ID = -8.4 A
td(on)
tr
td(off)
tf
pF
nC
ns
Source-Drain Diode Ratings and Characteristics (TC = 25 °C) b
Pulsed current
ISM
Forward voltage b
VSD
Reverse recovery time
trr
Reverse recovery time
Qrr
IF = -2 A, VGS = 0 V
IF = -8 A, di/dt = 100 A/μs
-
-
-20
-
-0.9
-1.3
A
V
-
50
80
ns
-
80
120
nC
Notes
a. Guaranteed by design, not subject to production testing
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-0788-Rev. A, 15-Apr-13
Document Number: 62843
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD08P06-155L-GE3
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
20
TC = - 55 °C
VGS = 10 thru 6 V
25 °C
16
ID - Drain Current (A)
I D - Drain Current (A)
24
5V
18
12
4V
6
125 °C
12
8
4
3V
0
0
2
4
6
8
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
10
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.30
12
TC = - 55 °C
0.25
25 °C
R DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
10
125 °C
8
6
4
2
VGS = 4.5 V
0.20
VGS = 10 V
0.15
0.10
0.05
0.00
0
0
2
4
6
8
0
10
4
8
ID - Drain Current (A)
16
20
ID - Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
20
800
V GS - Gate-to-Source Voltage (V)
700
600
C - Capacitance (pF)
12
Ciss
500
400
300
200
Coss
100
Crss
0
0
VDS = 30 V
ID = 8.4 A
16
12
8
4
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
Capacitance
S13-0788-Rev. A, 15-Apr-13
50
60
0
5
10
15
20
25
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 62843
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD08P06-155L-GE3
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
1.7
I S - Source Current (A)
R DS(on) - On-Resistance (Normalized)
2.0
1.4
1.1
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.8
0.001
0.5
- 50
- 25
0
25
50
75
100
125
150
0.0
0.2
TJ - Junction Temperature (°C)
10
100
8
10
6
4
1 ms
10 ms
DC, 10 s,
1 s, 100 ms
0.1
0
0.001
TC = 25 °C
Single Pulse
75
100
125
TC - Case Temperature (°C)
Drain Current vs. Case Temperature
S13-0788-Rev. A, 15-Apr-13
1.0
100 μs
1
0.01
50
0.8
Limited by RDS(on)*
2
25
0.6
Source-Drain Diode Forward Voltage
ID - Drain Current (A)
ID - Drain Current (A)
On-Resistance vs. Junction Temperature
0
0.4
VSD - Source-to-Drain Voltage (V)
150
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Document Number: 62843
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD08P06-155L-GE3
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 5
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (sec)
1
10
100
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62843.
S13-0788-Rev. A, 15-Apr-13
Document Number: 62843
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-252AA Case Outline
VERSION 1: FACILITY CODE = Y
E
A
C2
H
D
D1
L3
b3
e
b2
e1
L
gage plane height (0.5 mm)
L4
b
L5
E1
C
A1
MILLIMETERS
DIM.
MIN.
A
2.18
MAX.
2.38
A1
-
0.127
b
0.64
0.88
b2
0.76
1.14
b3
4.95
5.46
C
0.46
0.61
C2
0.46
0.89
D
5.97
6.22
D1
4.10
-
E
6.35
6.73
E1
4.32
-
H
9.40
10.41
e
2.28 BSC
e1
4.56 BSC
L
1.40
1.78
L3
0.89
1.27
L4
-
1.02
L5
1.01
1.52
Note
• Dimension L3 is for reference only
Revision: 03-Oct-2022
Document Number: 71197
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
VERSION 2: FACILITY CODE = N
E
e
A
b3
E1
E1/2
c2
θ
e
L4
L5
L6
H
D
L3
D1
θ
0.25
(3°)
DETAIL "B"
C A B
(3°)
DETAIL "B"
A1
C
L
(L1)
b1
SEATING
C
PLANE
θ
L2
GAUGE
PLANE
H
C
(b)
c1
3x b
2x e
c
2x b2
MILLIMETERS
MILLIMETERS
DIM.
A
MIN.
2.18
MAX.
DIM.
MIN.
2.39
L
1.50
A1
-
0.13
L1
b
0.65
0.89
L2
MAX.
1.78
2.74 ref.
0.51 BSC
b1
0.64
0.79
L3
b2
0.76
1.13
L4
-
1.02
b3
4.95
5.46
L5
1.14
1.49
c
0.46
0.61
L6
0.65
0.85
c1
0.41
0.56
0°
10°
1
0°
15°
2
25°
35°
c2
0.46
0.60
D
5.97
6.22
D1
5.21
-
E
6.35
6.73
E1
4.32
e
H
2.29 BSC
9.94
0.89
1.27
Notes
• Dimensioning and tolerance confirm to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
• Heat sink side flash is max. 0.8 mm
• Radius on terminal is optional
10.34
ECN: E22-0399-Rev. R, 03-Oct-2022
DWG: 5347
Revision: 03-Oct-2022
Document Number: 71197
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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3
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Revision: 01-Jan-2023
1
Document Number: 91000
