SUD09P10-195
Vishay Siliconix
P-Channel 100 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 100
ID (A)
0.195 at VGS = - 10 V
- 8.8
0.210 at VGS = - 4.5 V
- 8.5
Qg (Typ.)
11.7
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Power Switch
• DC/DC Converters
S
TO-252
G
Drain Connected to Tab
G
D
S
D
Top View
Ordering Information: SUD09P10-195-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
IDM
Pulsed Drain Current
Avalanche Current
Single Avalanche Energya
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
ID
L = 0.1 mH
TC = 25 °C
TA = 25 °Cc
V
- 8.8
- 7.1
- 15
IAS
- 18
EAS
16.2
PD
Unit
32.1
A
mJ
b
2.5
W
TJ, Tstg
- 55 to 150
°C
Unit
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Junction-to-Ambient (PCB Mount)c
RthJA
50
Junction-to-Case (Drain)
RthJC
3.9
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
Document Number: 65903
S10-0634-Rev. A, 22-Mar-10
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SUD09P10-195
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VDS = 0 V, ID = - 250 µA
- 100
VGS(th)
VDS = VGS, ID = - 250 µA
-1
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
IGSS
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
IDSS
- 2.5
VDS = 0 V, VGS = ± 20 V
± 250
VDS = - 100 V, VGS = 0 V
-1
VDS = - 100 V, VGS = 0 V, TJ = 125 °C
- 50
VDS = - 100 V, VGS = 0 V, TJ = 150 °C
- 250
VDS ≤ - 10 V, VGS = - 10 V
ID(on)
RDS(on)
gfs
- 15
V
nA
µA
A
VGS = - 10 V, ID = - 3.6 A
0.162
0.195
VGS = - 4.5 V, ID = - 3.4 A
0.175
0.210
VDS = - 15 V, ID = - 3.6 A
12
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
Rise Timec
VDS = - 50 V, VGS = - 10 V, ID = - 3.6 A
VDS = - 50 V, VGS = - 4.5 V, ID = - 3.6 A
Fall Timec
td(off)
23.2
34.8
11.7
17.6
3.5
f = 1 MHz
VDD = - 50 V, RL = 17.2 Ω
ID ≅ - 2.9 A, VGEN = - 10 V, Rg = 1 Ω
tf
Drain-Source Body Diode Ratings and Characteristics TC = 25 °C
1.2
5.7
11.5
7
14
12
18
33
50
9
18
- 8.8
Pulsed Current
ISM
- 15
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = - 2.9 A, VGS = 0 V
- 0.8
IF = - 2.9 A, dI/dt = 100 A/µs
98
trr
IRM(REC)
Qrr
Ω
ns
b
IS
Continuous Current
nC
4.8
td(on)
tr
c
pF
65
41
Rg
Gate Resistance
Turn-Off Delay Time
1055
VGS = 0 V, VDS = - 50 V, f = 1 MHz
A
- 1.5
V
50
75
ns
-4
-6
A
147
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65903
S10-0634-Rev. A, 22-Mar-10
SUD09P10-195
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
0.30
V GS = 10 V thru 5 V
V GS = 4 V
R DS(on) - On-Resistance (Ω)
I D - Drain Current (A)
12
9
6
V GS = 3 V
3
0
0.25
0.20
V GS = 4.5 V
V GS = 10 V
0.15
0.10
0
1
2
3
4
0
3
6
V DS - Drain-to-Source Voltage (V)
12
15
ID - Drain Current (A)
Output Characteristics
On-Resistance vs. Drain Current
2.0
0.60
R DS(on) - On-Resistance (Ω)
1.6
I D - Drain Current (A)
9
1.2
0.8
T C = 25 °C
0.4
0.45
T J = 150 °C
0.30
T J = 25 °C
0.15
T C = 125 °C
T C = - 55 °C
0.0
0.00
0
1
2
3
4
0
V GS - Gate-to-Source Voltage (V)
2
4
6
8
10
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
25
10
VGS - Gate-to-Source Voltage (V)
g fs - Transconductance (S)
ID = 3.6 A
20
T C = - 55 °C
15
T C = 25 °C
10
T C = 125 °C
5
0
8
V DS = 50 V
6
V DS = 25 V
4
V DS = 80 V
2
0
0
3
6
9
ID - Drain Current (A)
Transconductance
Document Number: 65903
S10-0634-Rev. A, 22-Mar-10
12
15
0
5
10
15
20
25
Qg - Total Gate Charge (nC)
Gate Charge
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SUD09P10-195
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
- 1.1
I S - Source Current (A)
- 1.4
T J = 150 °C
ID = 250 μA
VGS(th) (V)
10
- 1.7
T J = 25 °C
1
- 2.0
0.1
0.0
0.3
0.6
0.9
- 2.3
- 50
1.2
0
25
50
75
V SD - Source-to-Drain Voltage (V)
T J - Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
100
125
150
100
125
150
- 100
1200
VDS - Drain-to-Source Voltage (V)
1600
C - Capacitance (pF)
- 25
Ciss
800
400
- 106
ID = 250 μA
- 112
- 118
- 124
Coss
Crss
0
0
20
40
60
80
- 130
- 50
100
- 25
0
25
50
75
V DS - Drain-to-Source Voltage (V)
TJ - Junction Temperature (°C)
Capacitance
Drain Source Breakdown vs. Junction Temperature
2.1
10
V GS = 10 V
ID = 3.6 A
V GS = 4.5 V
1.3
0.9
I D - Drain Current (A)
(Normalized)
R DS(on) - On-Resistance
8
1.7
6
4
2
0.5
- 50
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4
0
- 25
0
25
50
75
100
125
150
0
25
50
75
100
T J - Junction Temperature (°C)
T C - Case Temperature (°C)
On-Resistance vs. Junction Temperature
Current Derating
125
150
Document Number: 65903
S10-0634-Rev. A, 22-Mar-10
SUD09P10-195
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
100
Limited by R DS(on)*
I D - Drain Current (A)
IDAV (A)
10
TJ = 25 °C
TJ = 150 °C
10
100 μs
1 ms
1
10 ms
100 ms
1 s, 10 s, DC
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
1
10-6
10-5
10-4
10-3
10-2
10-1
Time (s)
Single Pulse Avalanche Current Capability vs. Time
0.01
0.1
1
10
100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
10 -4
0.02
Single Pulse
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65903.
Document Number: 65903
S10-0634-Rev. A, 22-Mar-10
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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