SUD15N15-95
Vishay Siliconix
N-Channel 150 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
150
RDS(on) ()
ID (A)
0.095 at VGS = 10 V
15
0.100 at VGS = 6 V
15
•
•
•
•
TrenchFET® Power MOSFETS
175 °C Junction Temperature
100 % Rg Tested
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Primary Side Switch
TO-252
D
Drain Connected to Tab
G
D
G
S
Top View
S
Ordering Information: SUD15N15-95-E3 (Lead (Pb) free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
150
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C
TC = 125 °C
8.7
25
Continuous Source Current (Diode Conduction)
IS
15
Avalanche Current
IAR
15
EAR
11.3
Repetitive Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TA = 25 °C
62
PD
A
mJ
b
W
2.7a
TJ, Tstg
Operating Junction and Storage Temperature Range
V
15
ID
IDM
Pulsed Drain Current
Unit
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t 10 s
Junction-to-Ambienta
Steady State
Typical
Maximum
16
20
RthJA
RthJC
Junction-to-Case
45
55
2
2.4
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
Document Number: 71641
S13-0104-Rev. D, 21-Jan-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD15N15-95
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
VDS
VGS = 0 V, ID = 250 µA
150
VGS(th)
VDS = VGS, ID = 250 µA
2
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
VDS = 120 V, VGS = 0 V
1
VDS = 120 V, VGS = 0 V, TJ = 125 °C
50
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
V
VDS = 120 V, VGS = 0 V, TJ = 175 °C
VDS =5 V, VGS = 10 V
Forward
RDS(on)
Transconductanceb
gfs
µA
250
25
VGS = 10 V, ID = 15 A
Drain-Source On-State Resistanceb
nA
A
0.077
0.095
VGS = 10 V, ID = 15 A, TJ = 125 °C
0.190
VGS = 10 V, ID = 15 A, TJ = 175 °C
0.250
VGS = 6 V, ID = 10 A
0.081
VDS = 15 V, ID = 15 A
25
VGS = 0 V, VDS = 25 V, f = 1 MHz
115
0.100
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
c
20
VDS = 75 V, VGS = 10 V, ID = 15 A
1
td(on)
Rise Timec
tr
c
td(off)
Fall Timec
25
nC
5.5
7
Rg
Gate Resistance
Turn-On Delay Timec
pF
70
Qgd
Gate-Drain Charge
Turn-Off Delay Time
900
VDD = 75 V, RL = 5
ID 15 A, VGEN = 10 V, RG = 2.5
tf
3.2
8
12
35
55
17
25
30
45
ns
Source-Drain Diode Ratings and Characteristic (TC = 25 °C)
ISM
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
25
A
VSD
IF = 15 A, VGS = 0 V
0.9
1.5
V
trr
IF = 15 A, dI/dt = 100 A/µs
55
85
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 71641
S13-0104-Rev. D, 21-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD15N15-95
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless noted)
25
25
VGS = 10 thru 6 V
20
I D - Drain Current (A)
I D - Drain Current (A)
20
15
5V
10
5
3V
15
10
TC = 125 °C
5
25 °C
4V
- 55 °C
0
0
0
2
4
6
8
10
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.14
40
TC = - 55 °C
25 °C
24
RDS(on)- On-Resistance ()
g fs - Transconductance (S)
0.12
32
125 °C
16
8
0.10
VGS = 6 V
0.08
VGS = 10 V
0.06
0.04
0.02
0.00
0
0
5
10
15
20
0
25
5
10
ID - Drain Current (A)
20
25
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
1500
V GS - Gate-to-Source Voltage (V)
20
1200
C - Capacitance (pF)
15
Ciss
900
600
300
Crss
Coss
0
VDS = 75 V
ID = 15 A
16
12
8
4
0
0
20
40
60
80
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 71641
S13-0104-Rev. D, 21-Jan-13
100
0
8
16
24
32
40
Qg - Total Gate Charge (nC)
Gate Charge
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD15N15-95
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless noted)
100
VGS = 10 V
ID = 15 A
2.4
2.0
I S - Source Current (A)
R DS(on)- On-Resistance (Normalized)
2.8
1.6
1.2
0.8
TJ = 150 °C
10
TJ = 25 °C
0.4
0.0
- 50
- 25
0
25
50
75
100
125
150
1
175
0.3
0
0.6
0.9
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
100
20
I D - Drain Current (A)
I D - Drain Current (A)
10 µs
Limited by R DS(on)*
15
10
5
100 µs
10
1 ms
1
10 ms
100 ms
1 s, DC
TC = 25 °C
Single Pulse
0
0
25
50
75
100
125
TC - Case Temperature (°C)
150
175
0.1
0.1
Maximum Avalanche Drain Current
vs. Case Temperature
1
10
1000
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (sec)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71641.
www.vishay.com
4
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 71641
S13-0104-Rev. D, 21-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-252AA Case Outline
VERSION 1: FACILITY CODE = Y
E
A
C2
H
D
D1
L3
b3
e
b2
e1
L
gage plane height (0.5 mm)
L4
b
L5
E1
C
A1
MILLIMETERS
DIM.
MIN.
A
2.18
MAX.
2.38
A1
-
0.127
b
0.64
0.88
b2
0.76
1.14
b3
4.95
5.46
C
0.46
0.61
C2
0.46
0.89
D
5.97
6.22
D1
4.10
-
E
6.35
6.73
E1
4.32
-
H
9.40
10.41
e
2.28 BSC
e1
4.56 BSC
L
1.40
1.78
L3
0.89
1.27
L4
-
1.02
L5
1.01
1.52
Note
• Dimension L3 is for reference only
Revision: 03-Oct-2022
Document Number: 71197
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
VERSION 2: FACILITY CODE = N
E
e
A
b3
E1
E1/2
c2
θ
e
L4
L5
L6
H
D
L3
D1
θ
0.25
(3°)
DETAIL "B"
C A B
(3°)
DETAIL "B"
A1
C
L
(L1)
b1
SEATING
C
PLANE
θ
L2
GAUGE
PLANE
H
C
(b)
c1
3x b
2x e
c
2x b2
MILLIMETERS
MILLIMETERS
DIM.
A
MIN.
2.18
MAX.
DIM.
MIN.
2.39
L
1.50
A1
-
0.13
L1
b
0.65
0.89
L2
MAX.
1.78
2.74 ref.
0.51 BSC
b1
0.64
0.79
L3
b2
0.76
1.13
L4
-
1.02
b3
4.95
5.46
L5
1.14
1.49
c
0.46
0.61
L6
0.65
0.85
c1
0.41
0.56
0°
10°
1
0°
15°
2
25°
35°
c2
0.46
0.60
D
5.97
6.22
D1
5.21
-
E
6.35
6.73
E1
4.32
e
H
2.29 BSC
9.94
0.89
1.27
Notes
• Dimensioning and tolerance confirm to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
• Heat sink side flash is max. 0.8 mm
• Radius on terminal is optional
10.34
ECN: E22-0399-Rev. R, 03-Oct-2022
DWG: 5347
Revision: 03-Oct-2022
Document Number: 71197
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
www.vishay.com
3
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
1
Document Number: 91000