SUD17N25-165-E3

SUP17N25-165 Vishay Siliconix N-Channel 250-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 250 0.165 at VGS = 10 V 17 • TrenchFET® Power MOSFET • 175 °C Junction Temperature D TO-220AB G G D S S Top View Ordering Information: SUP17N25-165-E3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 250 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C IDM Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ID L = 0.1 mH TC = 25 °C TA = 25 °C Unit V 17 9.8 20 IAS 5 EAS 1.25 A mJ b PD 136 3.75a W TJ, Tstg - 55 to 175 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambienta RthJA 40 Junction-to-Case (Drain) RthJC 1.1 °C/W Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. See SOA curve for voltage derating. Document Number: 72850 S-71599-Rev. B, 30-Jul-07 www.vishay.com 1 SUP17N25-165 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Typa Test Conditions Min Max V(BR)DSS VGS = 0 V, ID = 250 µA 250 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 250 V, VGS = 0 V 1 VDS = 250 V, VGS = 0 V, TJ = 125 °C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) 4.0 VDS = 250 V, VGS = 0 V, TJ = 175 °C VDS = 15 V, VGS = 10 V VGS = 10 V, ID = 14 A Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs nA µA 250 17 A 0.130 0.165 VGS = 10 V, ID = 14 A, TJ = 125 °C 0.347 VGS = 10 V, ID = 14 A, TJ = 175 °C 0.462 VDS = 15 V, ID = 17 A V 36 Ω S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 70 Total Gate Chargec Qg 30 Gate-Source Chargec Gate-Drain Chargec VDS = 125 V, VGS = 10 V, ID = 17 A Qgd c Rise Timec Turn-Off Delay Timec Fall Timec td(off) 45 nC 10 Ω f = 1 MHz 1.6 15 25 VDD = 125 V, RL = 7.35 Ω ID ≅ 17 A, VGEN = 10 V, Rg = 2.5 Ω 130 195 30 45 100 150 td(on) tr pF 160 10 Rg Gate Resistance Turn-On Delay Time Qgs 1950 VGS = 0 V, VDS = 25 V, f = 1 MHz tf ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C) IS 17 Pulsed Current ISM 20 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 17 A, VGS = 0 V trr IRM(REC) Qrr IF = 17 A, di/dt = 100 A/µs A 0.9 1.5 V 115 175 ns 10 15 A 0.58 1.3 µC Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72850 S-71599-Rev. B, 30-Jul-07 SUP17N25-165 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 VGS = 10 thru 6 V 16 16 I D - Drain Current (A) I D - Drain Current (A) 5V 12 8 4 12 8 TC = 125 °C 4 25 °C 4V - 55 °C 0 0 0 4 8 12 16 0 20 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.32 60 TC = - 55 °C 0.28 r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 50 25 °C 40 125 °C 30 20 10 0.20 0.16 VGS = 10 V 0.12 0.08 0.04 0.00 0 0 4 8 12 16 0 20 4 8 12 16 20 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 2100 VGS - Gate-to-Source Voltage (V) 2800 C - Capacitance (pF) 0.24 Ciss 1400 700 Crss Coss VDS = 125 V ID = 17 A 16 12 8 4 0 0 0 40 80 120 160 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 72850 S-71599-Rev. B, 30-Jul-07 200 0 8 16 24 32 40 48 56 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUP17N25-165 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.8 100 VGS = 10 V ID = 17 A I S - Source Current (A) rDS(on) - On-Resistance (Normalized) 2.4 2.0 1.6 1.2 TJ = 150 °C 10 TJ = 25 °C 0.8 0.4 - 50 1 - 25 0 25 50 75 100 125 150 175 0.6 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 325 310 V (BR)DSS (V) 10 I Dav (a) 0.3 0 IAV (A) at TA = 25 °C 1 ID = 10 mA 295 280 0.1 265 IAV (A) at TA = 150 °C 0.01 0.000001 0.00001 0.0001 0.001 0.01 tin (Sec) Avalanche Current vs. Time www.vishay.com 4 0.1 250 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 72850 S-71599-Rev. B, 30-Jul-07 SUP17N25-165 Vishay Siliconix THERMAL RATINGS 20 100 Limited by rDS(on) 10 µs I D - Drain Current (A) I D - Drain Current (A) 16 12 8 10 100 µs 1 ms 1 10 ms TC = 25 °C Single Pulse 4 0 100 ms, DC 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 TC - Case Temperature (°C) VDS - Drain-to-Source Voltage (V) Maximum Avalanche Drain Current vs. Case Temperature Safe Operating Area 1000 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72850. Document Number: 72850 S-71599-Rev. B, 30-Jul-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1