SUD19P06-60L
Vishay Siliconix
P-Channel 60-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 60
rDS(on) (Ω)
ID (A)
0.060 at VGS = - 10 V
- 19
0.077 at VGS = - 4.5 V
- 16.8
Qg (Typ)
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
RoHS
26
COMPLIANT
TO-252
S
G
Drain Connected to Tab
G
D
S
Top View
D
P-Channel MOSFET
Ordering Information: SUD19P06-60L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 60
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 125 °C
Pulsed Drain Current
Avalanche Current, Single Pulse
Repetitive Avalanche Energy, Single Pulse
a
Power Dissipation
L = 0.1 mH
TC = 25 °C
TA = 25 °C
V
- 19
ID
- 11
IDM
- 30
IAS
- 22
EAS
24.2
A
mJ
46c
PD
W
2.7b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambientb
Junction-to-Case
Notes:
a. Duty cycle ≤ 1 %.
b. When monuted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
Document Number: 73103
S-71660-Rev. B, 06-Aug-07
Symbol
t ≤ 10 s
Steady State
RthJA
RthJC
Typical
Maximum
Unit
17
45
2.7
21
55
3.25
°C/W
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SUD19P06-60L
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
V(BR)DSS
VGS = 0 V, ID = - 250 µA
- 60
VGS(th)
VDS = VGS, ID = - 250 µA
-1
IGSS
Typ
Max
Unit
-3
V
VDS = 0 V, VGS = ± 20 V
± 100
nA
VDS = - 60 V, VGS = 0 V
-1
VDS = - 60 V, VGS = 0 V, TJ = 125 °C
- 50
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
V
VDS = - 60 V, VGS = 0 V, TJ = 175 ° C
VDS = - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 10 A
Drain-Source On-State Resistancea
a
Forward Transconductance
rDS(on)
gfs
µA
- 150
A
- 30
0.048
0.060
VGS = - 10 V, ID = - 16.8 A, TJ = 125 °C
0.102
VGS = - 10 V, ID = - 16.8 A, TJ = 175 °C
0.129
VGS = - 4.5 V, ID = - 5 A
0.061
VDS = - 15 V, ID = - 10 A
22
Ω
0.077
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
90
Total Gate Charge
Qg
26
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Timec
Rise Timec
Turn-Off Delay
1140
VGS = 0 V, VDS = - 25 V, f = 1 MHz
Fall Timec
VDS = - 30 V, VGS = - 10 V, ID = - 10 A
4.5
f = 1 MHz
7.0
td(on)
8
VDD = - 30 V, RL = 3 Ω
ID ≅ - 19 A, VGEN = - 10 V, Rg = 2.5 Ω
td(off)
tf
Drain-Source Body Diode Characteristics (TC = 25
pF
40
nC
7.0
tr
Timec
1710
130
Ω
15
9
15
65
100
30
45
ns
°C)b
IS
- 30
Pulsed Current
ISM
- 30
Forward Voltagea
VSD
IF = - 19 A, VGS = 0 V
- 1.0
- 1.5
V
trr
IF = - 19 A, di/dt = 100 A/µs
41
61
ns
Continuous Current
Reverse Recovery Time
A
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73103
S-71660-Rev. B, 06-Aug-07
SUD19P06-60L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
VGS = 10 thru 5 V
4V
25
ID - Drain Current (A)
ID - Drain Current (A)
25
20
15
10
3V
5
20
15
10
TC = 125 °C
5
25 °C
- 55 °C
0
0
2
4
6
8
0
0.0
10
0.5
1.0
VDS - Drain-to-Source Voltage (V)
2.5
3.0
3.5
4.0
4.5
Transfer Characteristics
0.12
35
TC = - 55 °C
0.10
rDS(on) - On-Resistance (Ω)
30
g fs - Transconductance (S)
2.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
25 °C
25
125 °C
20
15
10
0.08
VGS = 4.5 V
0.06
VGS = 10 V
0.04
0.02
5
0.00
0
0
5
10
15
20
25
0
30
5
10
15
20
25
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
1800
30
20
VGS - Gate-to-Source Voltage (V)
1500
C - Capacitance (pF)
1.5
Ciss
1200
900
600
300
Coss
Crss
0
0
VDS = 30 V
ID = 10 A
16
12
8
4
0
10
20
30
40
50
60
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 73103
S-71660-Rev. B, 06-Aug-07
50
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3
SUD19P06-60L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.2
40
VGS = 10 V
ID = 10 A
I S - Source Current (A)
rDS(on) - On-Resiistance
(Normalized)
1.9
1.6
1.3
1.0
10
TJ = 150 °C
TJ = 25 °C
0.7
1
0.4
- 50
- 25
0
25
50
75
100
125
150
0.0
175
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
25
100
10 µs
ID − Drain Current (A)
ID - Drain Current (A)
20
15
10
10
100 µs
*Limited
by rDS(on)
1 ms
10 ms
1
100 ms
DC
TC = 25 °C
Single Pulse
5
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Maximum Avalanche Drain Current
vs. Case Temperature
175
0.1
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
*VGS
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73103
S-71660-Rev. B, 06-Aug-07
SUD19P06-60L
Vishay Siliconix
THERMAL RATINGS
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73103
Document Number: 73103
S-71660-Rev. B, 06-Aug-07
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Package Information
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Vishay Siliconix
TO-252AA Case Outline
VERSION 1: FACILITY CODE = Y
E
A
C2
H
D
D1
L3
b3
e
b2
e1
L
gage plane height (0.5 mm)
L4
b
L5
E1
C
A1
MILLIMETERS
DIM.
MIN.
A
2.18
MAX.
2.38
A1
-
0.127
b
0.64
0.88
b2
0.76
1.14
b3
4.95
5.46
C
0.46
0.61
C2
0.46
0.89
D
5.97
6.22
D1
4.10
-
E
6.35
6.73
E1
4.32
-
H
9.40
10.41
e
2.28 BSC
e1
4.56 BSC
L
1.40
1.78
L3
0.89
1.27
L4
-
1.02
L5
1.01
1.52
Note
• Dimension L3 is for reference only
Revision: 03-Oct-2022
Document Number: 71197
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
VERSION 2: FACILITY CODE = N
E
e
A
b3
E1
E1/2
c2
θ
e
L4
L5
L6
H
D
L3
D1
θ
0.25
(3°)
DETAIL "B"
C A B
(3°)
DETAIL "B"
A1
C
L
(L1)
b1
SEATING
C
PLANE
θ
L2
GAUGE
PLANE
H
C
(b)
c1
3x b
2x e
c
2x b2
MILLIMETERS
MILLIMETERS
DIM.
A
MIN.
2.18
MAX.
DIM.
MIN.
2.39
L
1.50
A1
-
0.13
L1
b
0.65
0.89
L2
MAX.
1.78
2.74 ref.
0.51 BSC
b1
0.64
0.79
L3
b2
0.76
1.13
L4
-
1.02
b3
4.95
5.46
L5
1.14
1.49
c
0.46
0.61
L6
0.65
0.85
c1
0.41
0.56
0°
10°
1
0°
15°
2
25°
35°
c2
0.46
0.60
D
5.97
6.22
D1
5.21
-
E
6.35
6.73
E1
4.32
e
H
2.29 BSC
9.94
0.89
1.27
Notes
• Dimensioning and tolerance confirm to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
• Heat sink side flash is max. 0.8 mm
• Radius on terminal is optional
10.34
ECN: E22-0399-Rev. R, 03-Oct-2022
DWG: 5347
Revision: 03-Oct-2022
Document Number: 71197
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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Legal Disclaimer Notice
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 01-Jan-2022
1
Document Number: 91000
