SUD35N10-26P-E3

SUD35N10-26P www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) a 0.0260 at VGS = 10 V 35 0.0375 at VGS = 7 V 31 Qg (TYP.) 31 nC TO-252 TO • TrenchFET® power MOSFET • 100 % UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Drain connected to tab D • Primary side switch G S D G N-Channel MOSFET Top View S Ordering Information: SUD35N10-26P-E3 (lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C Continuous Source-Drain Diode Current 32 ID 12 b, c 10 b, c Avalanche Current Pulse Single Pulse Avalanche Energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C 50 e IS 6.9 b, c IAS 33 EAS 55 mJ 83 58 PD W 8.3 b, c 5.8 b, c TA = 70 °C Operating Junction and Storage Temperature Range A 40 TC = 25 °C Maximum Power Dissipation V 35 TA = 70 °C Pulsed Drain Current UNIT TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient b, d Maximum Junction-to-Case SYMBOL TYPICAL MAXIMUM t ≤ 10 s RthJA 15 18 Steady State RthJC 1.5 1.8 UNIT °C/W Notes a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 50 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 50 A. S15-1599-Rev. B, 06-Jul-15 Document Number: 69796 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD35N10-26P www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 100 - - - V 165 - - -11 - Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 μA mV/°C VGS(th) VDS = VGS, ID = 250 μA 2.5 - 4.4 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance a Dynamic RDS(on) gfs VDS = 100 V, VGS = 0 V - - 1 VDS = 100 V, VGS = 0 V, TJ = 55 °C - - 10 VDS ≥ 5 V, VGS = 10 V 40 - - VGS = 10 V, ID = 12 A - 0.0210 0.0260 VGS = 7 V, ID = 8 A - 0.0285 0.0375 VDS = 15 V, ID = 12 A - 25 - - 2000 - - 180 - μA A Ω S b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 60 - Total Gate Charge Qg - 31 47 - 10 - - 9 - - 1.5 - td(on) - 10 15 tr - 10 15 - 15 25 - 10 15 - - 50 - - 40 - 0.8 1.2 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(off) VDS = 12 V, VGS = 0 V, f = 1 MHz VDS = 50 V, VGS = 10 V, ID = 12 A f = 1 MHz VDD = 50 V, RL = 5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current a ISM Body Diode Voltage VSD TC = 25 °C IS = 10 A A V Body Diode Reverse Recovery Time trr - 50 75 ns Body Diode Reverse Recovery Charge Qrr - 100 150 nC Reverse Recovery Fall Time ta - 38 - Reverse Recovery Rise Time tb - 12 - IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C ns Note a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1599-Rev. B, 06-Jul-15 Document Number: 69796 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD35N10-26P www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 10 TC = - 55 °C 8 30 I D - Drain Current (A) I D - Drain Current (A) VGS = 10 V thru 7 V VGS = 6 V 20 10 6 4 TC = 125 °C 2 VGS = 4 V 0 0.0 TC = 25 °C VGS = 5 V 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.023 2500 Ciss 2000 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 6 0.022 VGS = 10 V 0.021 1500 1000 Coss 500 Crss 0.020 0 0 10 20 ID - Drain Current (A) 30 40 0 20 On-Resistance vs. Drain Current 60 80 100 Capacitance 10 R DS(on) - On-Resistance (Normalized) 2.2 ID = 12 A VGS - Gate-to-Source Voltage (V) 40 VDS - Drain-to-Source Voltage (V) VDS = 50 V 8 6 VDS = 80 V 4 2 0 0 5 10 15 20 25 30 35 2.0 ID = 12 A VGS = 10 V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 - 50 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S15-1599-Rev. B, 06-Jul-15 - 25 150 175 Document Number: 69796 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD35N10-26P www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.08 100 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 12 A TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.06 TA = 125 °C 0.04 TA = 25 °C 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 4 5 6 7 8 9 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage RDS(on) vs. VGS vs. Temperature 10 200 4.5 4.0 ID = 250 µA 150 Power (W) V GS(th) (V) 3.5 3.0 100 2.5 50 2.0 1.5 - 50 - 25 0 25 50 75 100 125 150 0 0.001 175 0.01 0.1 TJ - Temperature (°C) Threshold Voltage 1 Time (s) 10 100 1000 Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on)* 100 µs I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area S15-1599-Rev. B, 06-Jul-15 Document Number: 69796 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD35N10-26P www.vishay.com Vishay Siliconix 40 80 30 60 Power Dissipation (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 10 40 20 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power Derating 125 150 Note a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S15-1599-Rev. B, 06-Jul-15 Document Number: 69796 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD35N10-26P www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 40 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69796. S15-1599-Rev. B, 06-Jul-15 Document Number: 69796 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline VERSION 1: FACILITY CODE = Y E A C2 H D D1 L3 b3 e b2 e1 L gage plane height (0.5 mm) L4 b L5 E1 C A1 MILLIMETERS DIM. MIN. A 2.18 MAX. 2.38 A1 - 0.127 b 0.64 0.88 b2 0.76 1.14 b3 4.95 5.46 C 0.46 0.61 C2 0.46 0.89 D 5.97 6.22 D1 4.10 - E 6.35 6.73 E1 4.32 - H 9.40 10.41 e 2.28 BSC e1 4.56 BSC L 1.40 1.78 L3 0.89 1.27 L4 - 1.02 L5 1.01 1.52 Note • Dimension L3 is for reference only Revision: 03-Oct-2022 Document Number: 71197 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix VERSION 2: FACILITY CODE = N E e A b3 E1 E1/2 c2 θ e L4 L5 L6 H D L3 D1 θ 0.25 (3°) DETAIL "B" C A B (3°) DETAIL "B" A1 C L (L1) b1 SEATING C PLANE θ L2 GAUGE PLANE H C (b) c1 3x b 2x e c 2x b2 MILLIMETERS MILLIMETERS DIM. A MIN. 2.18 MAX. DIM. MIN. 2.39 L 1.50 A1 - 0.13 L1 b 0.65 0.89 L2 MAX. 1.78 2.74 ref. 0.51 BSC b1 0.64 0.79 L3 b2 0.76 1.13 L4 - 1.02 b3 4.95 5.46 L5 1.14 1.49 c 0.46 0.61 L6 0.65 0.85 c1 0.41 0.56  0° 10° 1 0° 15° 2 25° 35° c2 0.46 0.60 D 5.97 6.22 D1 5.21 - E 6.35 6.73 E1 4.32 e H 2.29 BSC 9.94 0.89 1.27 Notes • Dimensioning and tolerance confirm to ASME Y14.5M-1994 • All dimensions are in millimeters. Angles are in degrees • Heat sink side flash is max. 0.8 mm • Radius on terminal is optional 10.34      ECN: E22-0399-Rev. R, 03-Oct-2022 DWG: 5347 Revision: 03-Oct-2022 Document Number: 71197 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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