SUD40151EL
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Vishay Siliconix
P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
TO-252
TO
• TrenchFET® Gen IV p-channel power MOSFET
• Maximum 175 °C junction temperature
Drain connected to tab
• 100 % Rg and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
S
S
• Motor drive control
D
G
• LED backlighting
Top View
• Load switch
PRODUCT SUMMARY
VDS (V)
-40
RDS(on) max. () at VGS = 10 V
0.0120
RDS(on) max. () at VGS = 4.5 V
0.0175
Qg typ. (nC)
D
P-Channel MOSFET
74.3
ID (A) d
Configuration
G
• Industrial
-42
Single
ORDERING INFORMATION
Package
TO-252
Lead (Pb)-free and halogen-free
SUD40151EL-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
-40
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C
TC = 125 °C
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
Single pulse avalanche current a
L = 0.1 mH
Single pulse avalanche energy a
Maximum power dissipation
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
ID
-28.6
-100
IS
-41.7
IAS
-25
EAS
31.25
TJ, Tstg
c
V
-42 d
IDM
PD
UNIT
50 b
16.7 b
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient (PCB mount) c
Maximum junction-to-case (drain)
Steady state
SYMBOL
MAXIMUM
RthJA
60
RthJC
3
UNIT
°C/W
Notes
a. Duty cycle 1 %
b. See SOA curve for voltage derating
c. When mounted on 1" square PCB (FR4 material)
d. Package limited
S18-0676-Rev. B, 02-Jul-2018
Document Number: 75668
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SUD40151EL
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = -250 μA
-40
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-1.5
-
-2.5
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
250
nA
VDS = -40 V, VGS = 0 V
-
-
-1
Zero gate voltage drain current
IDSS
VDS = -40 V, VGS = 0 V, TJ = 125 °C
-
-
-150
On-state drain current a
ID(on)
Gate-source threshold voltage
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
μA
VDS = -40 V, VGS = 0 V, TJ = 175 °C
-
-
-5
mA
VDS -10 V, VGS = -10 V
-30
-
-
A
VGS = -10 V, ID = -17.5 A
-
0.0100
0.0120
VGS = -4.5 V, ID = -14.5 A
-
0.0135
0.0175
VDS = -10 V, ID = -17.5 A
-
70
-
-
5340
-
VDS = -20 V, VGS = 0 V, f = 1 MHz
-
335
-
-
303
-
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
-
74.3
112
VDS = -20 V, VGS = -10 V, ID = -17.5 A
-
12.7
-
-
11.1
-
f = 1 MHz
0.86
4.3
8.6
-
15
30
-
10
20
-
75
113
tf
-
75
113
Pulse diode forward current (t = 100 μs)
ISM
-
-
-42
Body diode voltage
VSD
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
VDD = -20 V, RL = 1.4 , ID -14 A,
VGEN = -10 V, Rg = 1
pF
nC
ns
Drain-Source Body Diode Characteristics
-
-0.85
-1.5
V
-
30
45
ns
-
0.02
0.04
μC
-
15.3
-
tb
-
14.7
-
IRM(REC)
-
-
2.8
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
Body diode peak reverse recovery charge
IF = -14 A, VGS = 0 V
A
IF = -14 A, di/dt = 100 A/μs
ns
A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0676-Rev. B, 02-Jul-2018
Document Number: 75668
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD40151EL
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
100
VGS = 10 V thru 5V
80
2nd line
ID - Drain Current (A)
VGS = 4 V
60
40
20
TC = 125 °C
60
40
TC = 25 °C
20
TC = -55 °C
VGS = 3 V
0
0
0
1
2
3
4
0
5
1
2
Output Characteristics
Transfer Characteristics
Axis Title
5
Axis Title
10000
10000
8000
0.02
VGS = 4.5 V
100
VGS = 10 V
0.01
6000
1000
1st line
2nd line
1000
2nd line
C - Capacitance (pF)
Ciss
0.03
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
4
VGS - Gate-to-Source Voltage (V)
2nd line
0.04
4000
100
2000
Coss
0
20
40
60
80
Crss
0
10
0
100
10
0
20
40
ID - Drain Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
Axis Title
10
1.7
VDS = 20 V
8
VDS = 10 V
1000
1st line
2nd line
6
VDS = 34 V
4
100
2
0
10
0
20
40
60
80
2nd line
RDS(on) - On-Resistance (Normalized)
10000
ID = 17.5 A
2nd line
VGS - Gate-to-Source Voltage (V)
3
VDS - Drain-to-Source Voltage (V)
2nd line
10000
VGS = 10 V, Id = 17.5 A
1.5
1000
1.3
VGS = 4.5 V,
Id = 14.5 A
1.1
100
0.9
0.7
10
-50 -25
0
25
50
75 100 125 150 175
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S18-0676-Rev. B, 02-Jul-2018
1st line
2nd line
2nd line
ID - Drain Current (A)
80
Document Number: 75668
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD40151EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
10000
1000
1
TJ = 25 °C
100
0.1
0.01
0.3
0.6
0.9
1000
TJ = 150 °C
0.02
100
0.01
TJ = 25 °C
0
10
0
0.03
1.2
10
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
100
10000
2.4
1st line
2nd line
1000
1.6
100
1.2
0.8
10
0
25
50
80
TC = 25 °C
1000
60
1st line
2nd line
2nd line
gfs - Transconductance (S)
2.0
-50 -25
10000
TC = -55 °C
ID = 250 μA
2nd line
VGS(th) (V)
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
10
TJ = 150 °C
10000
0.04
1st line
2nd line
2nd line
IS - Source Current (A)
100
TC = 125 °C
40
100
20
0
10
0
75 100 125 150 175
5
10
15
TJ - Temperature (°C)
2nd line
ID - Drain Current (A)
2nd line
Threshold Voltage
Transconductance
20
Axis Title
1000
10000
IDM limited
100 μs
10
1 ms
Limited by RDS(on) (1)
1
1000
10 ms
DC, 10 s,
1 s, 100 ms
0.1
1st line
2nd line
2nd line
ID - Drain Current (A)
100
100
0.01
TC= 25 °C
Single pulse
BVDSS limited
0.001
10
0.1
(1)
1
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S18-0676-Rev. B, 02-Jul-2018
Document Number: 75668
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD40151EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
55
10000
1000
33
1st line
2nd line
2nd line
ID - Drain Current (A)
44
22
100
11
0
10
0
25
50
75
100
125
150
175
TC - Case Temperature (°C)
2nd line
Current Derating a
Axis Title
100
10000
ID = 250uA
52
25 °C
48
2nd line
IDAV (A)
1000
50
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
54
10
150 °C
100
46
44
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
1
0.00001
0.0001
0.001
0.01
Time (s)
2nd line
IDAV vs. Time
Note
a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S18-0676-Rev. B, 02-Jul-2018
Document Number: 75668
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD40151EL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
30
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75668.
S18-0676-Rev. B, 02-Jul-2018
Document Number: 75668
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-252AA Case Outline
VERSION 1: FACILITY CODE = Y
E
A
C2
H
D
D1
L3
b3
e
b2
e1
L
gage plane height (0.5 mm)
L4
b
L5
E1
C
A1
MILLIMETERS
DIM.
MIN.
A
2.18
MAX.
2.38
A1
-
0.127
b
0.64
0.88
b2
0.76
1.14
b3
4.95
5.46
C
0.46
0.61
C2
0.46
0.89
D
5.97
6.22
D1
4.10
-
E
6.35
6.73
E1
4.32
-
H
9.40
10.41
e
2.28 BSC
e1
4.56 BSC
L
1.40
1.78
L3
0.89
1.27
L4
-
1.02
L5
1.01
1.52
Note
• Dimension L3 is for reference only
Revision: 16-Dec-2019
Document Number: 71197
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
VERSION 2: FACILITY CODE = N
E
e
A
b3
E1
E1/2
c2
θ
e
L4
L5
L6
H
D
L3
D1
θ
0.25
(3°)
DETAIL "B"
C A B
(3°)
DETAIL "B"
A1
C
L
(L1)
b1
SEATING
C
PLANE
θ
L2
GAUGE
PLANE
H
C
(b)
c1
3x b
2x e
c
2x b2
MILLIMETERS
MILLIMETERS
DIM.
A
MIN.
2.18
MAX.
DIM.
MIN.
2.39
L
1.50
A1
-
0.13
L1
b
0.65
0.89
L2
MAX.
1.78
2.74 ref.
0.51 BSC
b1
0.64
0.79
L3
b2
0.76
1.13
L4
-
1.02
b3
4.95
5.46
L5
1.14
1.49
c
0.46
0.61
L6
0.65
0.85
c1
0.41
0.56
0°
10°
1
0°
15°
2
25°
35°
c2
0.46
0.60
D
5.97
6.22
D1
5.21
-
E
6.35
6.73
E1
4.32
e
H
2.29 BSC
9.94
0.89
1.27
Notes
• Dimensioning and tolerance confirm to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
• Heat sink side flash is max. 0.8 mm
• Radius on terminal is optional
10.34
ECN: E19-0649-Rev. Q, 16-Dec-2019
DWG: 5347
Revision: 16-Dec-2019
Document Number: 71197
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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Revision: 09-Jul-2021
1
Document Number: 91000