SUD40N02-08-E3

SUD40N02-08 Vishay Siliconix N-Channel 20-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (
) ID (A)a 0.0085 @ VGS = 4.5 V 40 0.014 @ VGS = 2.5 V 40 VDS (V) 20 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252 Drain Connected to Tab G D G S Top View Order Number: SUD40N02-08 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "12 TC = 25_C Continuous Drain Currenta TC = 100_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range Unit V 40 ID 40 IDM 100 IS 40 A 71 PD W 8.3b, c TJ, Tstg - 55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec. Maximum Junction-to-Ambientb Maximum Junction-to-Case Steady State RthJA RthJC Typical Maximum 15 18 40 50 1.75 2.1 Unit _C/W Notes a. Package Limited b. Surface Mounted on 1” x 1” FR4 Board c. t v 10 sec Document Number: 71422 S-31724—Rev. B, 18-Aug-03 www.vishay.com 1 SUD40N02-08 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 A 20 VGS(th) VDS = VGS, ID = 250 A 0.6 IGSS VDS = 0 V, VGS = "12 V "100 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs VDS = 5 V, VGS = 4.5 V V 40 A A VGS = 4.5 V, ID = 20 A 0.0068 0.0085 VGS = 4.5 V, ID = 20 A, TJ = 125_C 0.0104 0.013 VGS = 2.5 V, ID = 20 A 0.011 0.014 VDS = 5 V, ID = 40 A nA 20
S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec VGS = 0 V, VDS = 20 V, f = 1 MHz 26 pF 35 5 VDS = 10 V,, VGS = 4.5 V,, ID = 40 A nC 7 Rg td(off) 730 375 1 td(on) tr Timec 2660 VDD = 10 V, RL = 0.25
ID ^ 40 A, VGEN = 4.5 V, RG = 2.5
tf 3.7 20 35 120 190 45 70 20 35
ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM 100 A Voltageb VSD IF = 100 A, VGS = 0 V 1.2 1.5 V Source-Drain Reverse Recovery Time trr IF = 40 A, di/dt = 100 A/s 35 70 ns Diode Forward Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 s, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71422 S-31724—Rev. B, 18-Aug-03 SUD40N02-08 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 100 VGS = 4.5 thru 3 V 80 60 I D - Drain Current (A) I D - Drain Current (A) 80 2.5 V 40 2V 20 60 40 TC = 125_C 20 25_C 1, 0.5 V 0 0 2 4 6 8 0 0.0 10 0.5 VDS - Drain-to-Source Voltage (V) 1.0 - 55_C 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 120 0.020 TC = - 55_C r DS(on) - On-Resistance (
) g fs - Transconductance (S) 100 25_C 80 125_C 60 40 20 0 0.015 VGS = 2.5 V 0.010 VGS = 4.5 V 0.005 0.000 0 20 40 60 80 0 100 20 40 VGS - Gate-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) C - Capacitance (pF) Ciss 2700 1800 Coss Crss 100 Gate Charge 12 3600 900 80 ID - Drain Current (A) Capacitance 4500 60 0 VGS = 10 V ID = 40 A 9 6 3 0 0 4 8 12 16 VDS - Drain-to-Source Voltage (V) Document Number: 71422 S-31724—Rev. B, 18-Aug-03 20 0 10 20 30 40 50 60 70 Qg - Total Gate Charge (nC) www.vishay.com 3 SUD40N02-08 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 VGS = 4.5 V ID = 20 A 1.6 I S - Source Current (A) r DS(on) - On-Resistance (
) (Normalized) 2.0 1.2 0.8 0.4 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ = 150_C TJ = 25_C 10 1 175 0 0.3 TJ - Junction Temperature (_C) 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature Safe Operating Area 200 50 100 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 s Limited by rDS(on) 100 s 10 1 ms 10 ms 100 ms dc TC = 25_C Single Pulse 10 0 1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TC - Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71422 S-31724—Rev. B, 18-Aug-03 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1