SUD40N04-10A-E3

SUD40N04-10A New Product Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.010 @ VGS = 10 V 40 0.014 @ VGS = 4.5 V 40 V(BR)DSS (V) 40 D TO-252 G Drain Connected to Tab G D S Top View S N-Channel MOSFET Order Number: SUD40N04-10A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Symbol Limit Drain-Source Voltage Parameter VDS 40 Gate-Source Voltage VGS
20 Continuous Drain Current (TJ = 175_C) _ TC = 25_C TC = 100_C Pulsed Drain Current Avalanche Current Unit V 40a ID 40a IDM 100 IAR 30 A Repetitive Avalanche Energyb L = 0.1 mH EAR 45 Power Dissipation TC = 25_C PD 71c W TJ, Tstg –55 to 175 _C Operating Junction and Storage Temperature Range mJ THERMAL RESISTANCE RATINGS Parameter Symbol t  10 sec. Junction-to-Ambientd Junction-to-Case Steady State RthJA RthJC Typical Maximum 15 18 40 50 1.75 2.1 Unit _C/W C/W Notes: a. Package limited. b. Duty cycle  1%. c. See SOA curve for voltage derating. d. Surface mounted on 1” FR4 board. Document Number: 71420 S-03269—Rev. A, 26-Mar-01 www.vishay.com 1 SUD40N04-10A New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 40 VGS(th) VDS = VGS, IDS = 250 mA 1 IGSS VDS = 0 V, VGS =
20 V
100 VDS = 32 V, VGS = 0 V 1 VDS = 32 V, VGS = 0 V, TJ = 125_C 50 VDS = 32 V, VGS = 0 V, TJ = 175_C 150 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS ID(on) rDS(on) gfs VDS = 5 V, VGS = 10 V 3 40 VGS = 10 V, ID = 40 A 0.0075 0.010 0.012 0.016 VGS = 10 V, ID = 40 A, TJ = 175_C 0.015 0.020 VGS = 4.5 V, ID = 10 A 0.011 0.014 VGS = 4.5 V, ID = 10 A, TJ = 125_C 0.018 0.022 VGS = 4.5 V, ID = 10 A, TJ = 175_C 0.022 0.028 20 nA mA m A VGS = 10 V, ID = 40 A, TJ = 125_C VDS = 15 V, ID = 40 A V 40 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 145 Total Gate Chargec Qg 35 Gate-Source Chargec Qgs Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 1700 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 40 A Qgd 370 pF 6 nC 8 td(on) 14 30 tr VDD = 20 V, RL = 0.5 W 7.5 15 td(off) ID  40 A, VGEN = 10 V, RG = 2.5 W 30 60 14 30 tf ns Source-Drain Ciode Ratings and Characteristics (TC = 25_C)b Continuous Current Is 40 Pulsed Current ISM 100 Forward Voltagea VSD IF = 40 A, VGS = 0 V 1.0 1.50 V trr IF = 40 A, di/dt = 100 A/ms 30 60 ns Reverse Recovery Time A Notes: a. Pulse test; pulse width  300 ms, duty cycle  2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71420 S-03269—Rev. A, 26-Mar-01 SUD40N04-10A New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 120 80 5V 90 I D – Drain Current (A) I D – Drain Current (A) VGS = 10 thru 6 V 60 4V 60 40 TC = 125_C 30 20 25_C 3V 0 –55_C 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 0.030 80 r DS(on) – On-Resistance ( Ω ) g fs – Transconductance (S) TC = –55_C 25_C 60 125_C 40 20 0.025 0.020 0.015 VGS = 4.5 V VGS = 10 V 0.010 0.005 0 0.000 0 20 40 60 80 100 0 20 40 80 100 ID – Drain Current (A) VGS – Gate-to-Source Voltage (V) Capacitance Gate Charge 3000 20 V GS – Gate-to-Source Voltage (V) 2500 C – Capacitance (pF) 60 Ciss 2000 1500 1000 Coss 500 Crss 0 0 VGS = 20 V ID = 40 A 16 12 8 4 0 8 16 24 32 VDS – Drain-to-Source Voltage (V) Document Number: 71420 S-03269—Rev. A, 26-Mar-01 40 0 10 20 30 40 50 60 Qg – Total Gate Charge (nC) www.vishay.com 3 SUD40N04-10A New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature 2.5 100 2.0 TJ = 150_C I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 25_C 10 0.5 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0 TJ – Junction Temperature (_C) 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 1000 50 Limited by rDS(on) 100 I D – Drain Current (A) I D – Drain Current (A) 40 30 20 10 0 10 ms 100 ms 10 1 1 ms 10 ms 100 ms dc TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71420 S-03269—Rev. A, 26-Mar-01 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1