SUD42N03-3M9P-GE3

SUD42N03-3m9P Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) Qg (Typ.) d 0.0039 at VGS = 10 V 107 0.0045 at VGS = 4.5 V 103d 67 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters - Synchronous Buck Low Side TO-252 D G Drain Connected to Tab G D S Top View S N-Channel MOSFET Ordering Information: SUD42N03-3m9P-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 ID 85d Pulsed Drain Current (t = 300 µs) IDM 120 Avalanche Current IAS 45 TC = 70 °C (Silicon Limited) TC = 25 °C (Package Limited) Single Avalanche Energya L = 0.1 mH TC = 25 °C Maximum Power Dissipationa TA = 25 °Cc Operating Junction and Storage Temperature Range V 107d TC = 25 °C (Silicon Limited) Continuous Drain Current Unit 42 EAS PD 101 73.5b 2.5 A mJ W TJ, Tstg - 55 to 150 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) Junction-to-Case (Drain) c RthJA 50 RthJC 1.7 °C/W Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 42 A. Document Number: 66824 S10-2006-Rev. A, 06-Sep-10 www.vishay.com 1 SUD42N03-3m9P Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. VDS VDS = 0 V, ID = 250 µA 30 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V ± 250 VDS = 30 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS 2.5 VDS = 30 V, VGS = 0 V, TJ = 125 °C 50 VDS = 30 V, VGS = 0 V, TJ = 150 °C 250 ID(on) RDS(on) gfs VDS 10 V, VGS = 10 V 50 V nA µA A VGS = 10 V, ID = 22 A 0.0032 0.0039 VGS = 4.5 V, ID = 20 A 0.0037 0.0045 VDS = 15 V, ID = 20 A 110  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 3535 VGS = 0 V, VDS = 15 V, f = 1 MHz tr pF 400 67 VDS = 15 V, VGS = 10 V, ID = 20 A 100 10.5 nC 12.2 f = 1 MHz td(on) td(off) 680 VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  tf 0.3 1.4 2.8 11 20 10 20 35 53 10 20  ns Drain-Source Body Diode Ratings and Characteristicsb TC = 25 °C IS 42 Pulsed Current ISM 120 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 10 A, VGS = 0 V trr IRM(REC) Qrr IF = 10 A, dI/dt = 100 A/µs A 0.83 1.5 V 41 62 ns 2 3 A 40 60 nC Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 66824 S10-2006-Rev. A, 06-Sep-10 SUD42N03-3m9P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 120 0.0045 I D - Drain Current (A) R DS(on) - On-Resistance (Ω) VGS = 10 V thru 4 V 100 VGS = 3 V 80 60 40 0.0040 VGS = 4.5 V 0.0035 VGS = 10 V 0.0030 20 0 0.0025 0 0.5 1.0 1.5 2.0 0 20 40 VDS - Drain-to-Source Voltage (V) 4 0.012 R DS(on) - On-Resistance (Ω) I D - Drain Current (A) 0.015 3 2 TC = 25 °C 1 0.009 TJ = 150 °C 0.006 0.003 TC = 125 °C TJ = 25 °C TC = - 55 °C 0 1.2 100 On-Resistance vs. Drain Current 5 0.6 80 ID - Drain Current (A) Output Characteristics 0 60 1.8 2.4 0 3.0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 10 10 300 VGS - Gate-to-Source Voltage (V) g fs - Transconductance (S) ID = 20 A TC = - 55 °C 240 180 TC = 25 °C 120 TC = 125 °C 60 8 VDS = 15 V 6 VDS = 8 V VDS = 24 V 4 2 0 0 0 12 Document Number: 66824 S10-2006-Rev. A, 06-Sep-10 24 36 48 60 0 20 40 60 I D - Drain Current (A) Qg - Total Gate Charge (nC) Transconductance Gate Charge 80 www.vishay.com 3 SUD42N03-3m9P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.1 100 I S - Source Current (A) 1.8 ID = 250 µA TJ = 150 °C VGS(th) (V) 10 TJ = 25 °C 1.5 1.2 1 0.9 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0.6 - 50 1.2 0 25 50 75 TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 5000 100 125 150 100 125 150 VDS - Drain-to-Source Voltage (V) 41 Ciss 4000 C - Capacitance (pF) - 25 VSD - Source-to-Drain Voltage (V) 3000 2000 Coss 1000 39 ID = 250 µA 37 35 Crss 0 0 5 10 15 20 25 33 - 50 30 - 25 0 25 50 75 VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) Capacitance Drain Source Breakdown vs. Junction Temperature 1.8 160 1.5 120 I D - Drain Current (A) (Normalized) R DS(on) - On-Resistance ID = 20 A 1.2 0.9 VGS = 10 V 0.6 - 50 0 25 0 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 4 Package Limited 40 VGS = 4.5 V - 25 80 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating Document Number: 66824 S10-2006-Rev. A, 06-Sep-10 SUD42N03-3m9P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 100 Limited by RDS(on)* TJ = 25 °C TJ = 150 °C 10 I D - Drain Current (A) I D_AV (A) 100 100 µs 10 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 TC = 25 °C Single Pulse 0.1 1 10-5 10-4 10-3 10-2 10-1 Time (s) Single Pulse Avalanche Current Capability vs. Time 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 100 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66824. Document Number: 66824 S10-2006-Rev. A, 06-Sep-10 www.vishay.com 5 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 Notes • Dimension L3 is for reference only. Revision: 16-May-16 Document Number: 71197 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000