SUD45P03-09-GE3

SUD45P03-09 Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0087 at VGS = - 10 V - 45d 0.0150 at VGS = - 4.5 V - 32 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 60 APPLICATIONS • Power Switch • Load Switch in High Current Applications • DC/DC Converters TO-252 S G Drain Connected to Tab G D S D Top View Ordering Information: SUD45P03-09-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 Operating Junction and Storage Temperature Range °Cc ID V - 45d - 42.5 IDM - 100 IAS - 35 EAS 61 PD Unit 41.7 A mJ b 2.1 W TJ, Tstg - 55 to 150 °C Symbol Limit Unit RthJA 60 RthJC 3 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 65595 S10-0460-Rev. B, 22-Feb-10 www.vishay.com 1 SUD45P03-09 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = - 250 µA - 30 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS - 2.5 ± 250 VDS = - 30 V, VGS = 0 V 1 VDS = - 30 V, VGS = 0 V, TJ = 125 °C 50 VDS = - 30 V, VGS = 0 V, TJ = 150 °C 250 VDS ≤ - 10 V, VGS = - 10 V ID(on) RDS(on) gfs - 50 V nA µA A VGS = - 10 V, ID = - 20 A 0.0072 0.0087 VGS = - 4.5 V, ID = - 15 A 0.0125 0.0150 VDS = - 15 V, ID = - 20 A 45 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c 445 60 VDS = - 15 V, VGS = - 10 V, ID = - 20 A Turn-On Delay Timec Rise Timec Fall Timec f = 1 MHz td(on) tr c td(off) 90 nC 9.3 15 Rg Gate Resistance pF 515 Qgd Gate-Drain Charge Turn-Off Delay Time 2700 VGS = 0 V, VDS = - 15 V, f = 1 MHz VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω tf Drain-Source Body Diode Ratings and Characteristics TC = 25 °C 0.5 2.5 5 12 20 11 20 40 60 12 20 - 45 Pulsed Current ISM - 100 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Qrr A IF = - 10 A, VGS = 0 V - 0.8 - 1.5 V 27 40 ns IF = - 10 A, dI/dt = 100 A/µs 1.3 2 A 20 30 nC trr IRM(REC) ns b IS Continuous Current Ω Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65595 S10-0460-Rev. B, 22-Feb-10 SUD45P03-09 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.020 I D - Drain Current (A) 60 R DS(on) - On-Resistance (Ω) VGS = 10 V thru 5 V 80 VGS = 4 V 40 20 0.015 VGS = 4.5 V 0.010 VGS = 10 V 0.005 VGS = 3 V 0 0.0 0.000 0.5 1.0 1.5 2.0 2.5 0 20 40 Output Characteristics 4 0.04 R DS(on) - On-Resistance (Ω) 0.05 3 2 TC = 25 °C 1 0.03 0.02 TJ = 150 °C 0.01 TC = 125 °C TJ = 25 °C TC = - 55 °C 0 1 2 3 0.00 2 4 4 6 8 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 10 10 75 ID = 20 A VGS - Gate-to-Source Voltage (V) TC = - 55 °C g fs - Transconductance (S) 100 On-Resistance vs. Drain Current 5 0 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) I D - Drain Current (A) 60 60 TC = 25 °C 45 TC = 125 °C 30 15 8 VDS = 15 V 6 VDS = 8 V VDS = 24 V 4 2 0 0 0 10 Document Number: 65595 S10-0460-Rev. B, 22-Feb-10 20 30 40 50 0 20 40 60 ID - Drain Current (A) Qg - Total Gate Charge (nC) Transconductance Gate Charge 80 www.vishay.com 3 SUD45P03-09 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted - 1.0 100 VGS(th) (V) I S - Source Current (A) - 1.3 TJ = 150 °C 10 TJ = 25 °C ID = 250 µA - 1.6 1 - 1.9 0.1 0.0 0.3 0.6 0.9 - 2.2 - 50 1.2 0 25 50 75 VSD - Source-to-Drain Voltage (V) TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 4000 100 125 150 100 125 150 VDS - Drain-to-Source Voltage (V) - 33 Ciss 3000 C - Capacitance (pF) - 25 2000 1000 Coss Crss 0 0 5 10 15 20 25 ID = 250 µA - 34 - 35 - 36 - 37 - 50 30 - 25 0 25 50 75 VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) Capacitance Drain Source Breakdown vs. Junction Temperature 60 1.8 ID = 20 A I D - Drain Current (A) (Normalized) R DS(on) - On-Resistance VGS = 10 V 1.5 1.2 VGS = 4.5 V www.vishay.com 4 Package Limited 30 15 0.9 0.6 - 50 45 0 - 25 0 25 50 75 100 125 150 0 25 50 75 100 TJ - Junction Temperature (°C) TC - Case Temperature (°C) On-Resistance vs. Junction Temperature Current Derating 125 150 Document Number: 65595 S10-0460-Rev. B, 22-Feb-10 SUD45P03-09 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 100 Limited by RDS(on)* TJ = 25 °C TJ = 150 °C 10 I D - Drain Current (A) I DAV (A) 100 100 µA 10 1 ms 10 ms, 100 ms 1 s, 10 s, DC 1 TA = 25 °C Single Pulse 0.1 1 10-5 10-4 10-3 10-2 10-1 0.01 0.1 1 Time (s) Single Pulse Avalanche Current Capability vs. Time BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65595. Document Number: 65595 S10-0460-Rev. B, 22-Feb-10 www.vishay.com 5 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 Notes • Dimension L3 is for reference only. Revision: 16-May-16 Document Number: 71197 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000