SUD45P03-10-E3

SUD45P03-10 Vishay Siliconix P-Channel 30-V (D-S), MOSFET FEATURES PRODUCT SUMMARY RDS(on) (:) ID (A)a 0.010 at VGS = - 10 V - 15 0.018 at VGS = - 4.5 V - 12 VDS (V) - 30 • TrenchFET® Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to Tab G D S D Top View P-Channel MOSFET Ordering Information: SUD45P03-10-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Currentb TA = 25 °C TA = 100 °C Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25 °C TA = 25 °C V - 15 ID -8 IDM - 100 IS - 15 A 70 PD TJ, Tstg Unit W 4b - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambientb RthJA 30 Maximum Junction-to-Case RthJC 1.8 Unit °C/W Notes: a. Calculated Rating for TA = 25 °C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and Typical Characteristics). b. Surface Mounted on FR4 board, t d 10 s. Document Number: 70766 S-81734-Rev. E, 04-Aug-08 www.vishay.com 1 SUD45P03-10 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 μA - 30 VGS(th) VDS = VGS, ID = - 250 μA - 1.0 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistance a RDS(on) - 3.0 ± 100 VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 125 °C - 50 VDS = -5 V, VGS = - 10 V - 50 VDS = -5 V, VGS = - 4.5 V - 20 VGS = - 10 V, ID = - 15 A 0.010 VGS = - 10 V, ID = - 15 A, TJ = 125 °C 0.015 gfs VDS = - 15 V, ID = - 15 A nA μA A VGS = - 4.5 V, ID = - 15 A Forward Transconductancea V : 0.018 20 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c 6000 VGS = 0 V, VDS = - 25 V, f = 1 MHz pF 1100 700 90 VDS = - 15 V, VGS = - 10 V, ID = - 45 A 150 nC 20 Gate-Drain Charge Qgd 16 Turn-On Delay Timec td(on) 15 25 375 550 100 200 140 250 Rise Timec tr Turn-Off Delay Timec td(off) Fall Timec VDD = - 15 V, RL = 0.33 : ID # - 45 A, VGEN = - 10 V, RG = 2.4 : tf ns Source-Drain Diode Ratings and Characteristic TC = 25 °C ISM Pulsed Current Diode Forward Voltage a Source-Drain Reverse Recovery Time 100 A VSD IF = - 45 A, VGS = 0 V 1.0 1.5 V trr IF = - 45 A, dI/dt = 100 A/μs 55 100 ns Notes: a. Pulse test; pulse width d 300 μs, duty cycle d 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70766 S-81734-Rev. E, 04-Aug-08 SUD45P03-10 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 250 VGS = 10, 9, 8, 7 V 80 200 I D - Drain Current (A) I D - Drain Current (A) 6V 150 5V 100 4V 60 40 TC = 125 °C 20 50 25 °C 3V - 55 °C 0 0 0 2 4 6 8 0 10 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 0.05 80 60 R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 25 °C 125 °C 40 20 0.04 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0.00 0 0 10 20 30 40 0 50 20 40 80 100 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 8000 20 VDS = 15 V ID = 45 A VGS - Gate-to-Source Voltage (V) Ciss 6000 C - Capacitance (pF) 60 4000 Coss 2000 16 12 8 4 Crss 0 0 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 70766 S-81734-Rev. E, 04-Aug-08 25 30 0 30 60 90 120 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUD45P03-10 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 2.0 VGS = 10 V ID = 45 A I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 1.6 1.2 0.8 TJ = 150 °C TJ = 25 °C 10 0.4 0.0 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 1 150 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 1.5 Source-Drain Diode Forward Voltage 20 500 16 100 I D - Drain Current (A) I D - Drain Current (A) THERMAL RATINGS 12 8 10, 100 μs Limited by R DS(on)* 1 ms 10 10 ms 100 ms 1s 1 TA = 25 °C Single Pulse 4 DC 0 0 25 50 75 100 TA - Ambient Temperature (°C) Maximum Drain Current vs. Ambient Temperature 125 150 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 500 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70766. www.vishay.com 4 Document Number: 70766 S-81734-Rev. E, 04-Aug-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000