SUD45P03-15

SUD45P03-15 Siliconix P-Channel 30-V (D-S), 150C MOSFET Product Summary rDS(on) (
) ID (A)a 0.015 @ VGS = –10 V
13 0.024 @ VGS = –4.5 V
8 VDS (V) –30 30 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-15 D P-Channel MOSFET Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) Parameter Symbol Limit Drain-Source Voltage VDS –30 Gate-Source Voltage VGS
20 TA = 25C Continuous Drain Currentb Pulsed Drain Current Continuous Source Current (Diode Conduction) TC = 25C Maximum Power Dissipationb V
13 ID TA = 100C Unit
8 IDM
100 IS –13 A 70 PD TA = 25C Operating Junction and Storage Temperature Range W 4a TJ, Tstg C –55 to 150 Thermal Resistance Ratings Parameter Symbol Typical Maximum Maximum Junction-to-Ambientb RthJA 30 Maximum Junction-to-Case RthJC 1.8 Unit C/W Notes a. Calculated Rating for TA = 25C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and Typical Characteristics). b. Surface Mounted on FR4 Board, t  10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70267. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054  Phone (408)988-8000  FaxBack (408)970-5600  www.siliconix.com S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 1-51 SUD45P03-15 Siliconix Specifications (TJ = 25C Unless Otherwise Noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = –250 mA –30 VGS(th) VDS = VGS, ID = –250 mA –1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS On State Drain Currentb On-State ID(on) D( ) Typa Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistanceb Forward Transconductance b rDS(on) gfs V "100 VDS = –30 V, VGS = 0 V –1 VDS = –30 V, VGS = 0 V, TJ = 125C –50 VDS = –5 V, VGS = –10 V –50 VDS = –5 V, VGS = –4.5 V –20 mA A VGS = –10 V, ID = –13 A 0.012 0.015 VGS = –10 V, ID = –13 A, TJ = 125C 0.018 0.026 VGS = –4.5 V, ID = –13 A 0.020 0.024 VDS = –15 V, ID = –13 A nA 20 W S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 280 Total Gate Chargec Qg 50 Gate-Source Chargec 3200 VGS = 0 V, VDS = –25 V, F = 1 MHz VDS = –15 V, VGS = –10 V, ID = –45 A Qgs Qgd 6.2 Turn-On Delay Timec td(on) 13 Rise tr Turn-Off Delay Timec Fall Timec td(off) VDD = –15 V, RL = 0.33 W ID ^ –45 A, VGEN = –10 V, RG = 2.4 W tf 125 nC 14 Gate-Drain Chargec Timec pF 800 20 10 20 50 100 20 40 ns Source-Drain Diode Ratings and Characteristic (TC = 25C) Pulsed Current Diode Forward ISM Voltageb Source-Drain Reverse Recovery Time 100 VSD IF = –45 A, VGS = 0 V 1.0 1.5 V trr IF = –45 A, di/dt = 100 A/ms 55 100 ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054  Phone (408)988-8000  FaxBack (408)970-5600  www.siliconix.com S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 1-52 A SUD45P03-15 Siliconix Typical Characteristics (25C Unless Otherwise Noted) Output Characteristics  6V 7V VGS = 10, 9, 8 V TC = –55C I D – Drain Current (A)  I D – Drain Current (A) Transfer Characteristics  5V   4V   25C 125C   3V  2V        VDS – Drain-to-Source Voltage (V) g fs – Transconductance (S) rDS(on) – On-Resistance (
) 25C 125C           
 
 VGS = 10 V 
   VGS – Gate-to-Source Voltage (V) C – Capacitance (pF)     Coss           Gate Charge    Crss  ID – Drain Current (A) Ciss   VGS = 4.5 V   Capacitance   
 ID – Drain Current (A)   On-Resistance vs. Drain Current 
 TC = –55C   VGS – Gate-to-Source Voltage (V) Transconductance    VDS – Drain-to-Source Voltage (V)  VDS = 15 V ID = 45 A         Qg – Total Gate Charge (nC) Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054  Phone (408)988-8000  FaxBack (408)970-5600  www.siliconix.com S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 1-53 SUD45P03-15 Siliconix Typical Characteristics (25C Unless Otherwise Noted) On-Resistance vs. Junction Temperature  VGS = 10 V ID = 45 A I S – Source Current (A)  rDS(on) – On-Resistance ( W ) (Normalized) Source-Drain Diode Forward Voltage 100    

       TJ = 150C TJ = 25C 10 1  0 TJ – Junction Temperature (C) 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Thermal Ratings Maximum Drain Current vs. Ambiemt Temperature  Safe Operating Area 500 100 I D – Drain Current (A) I D – Drain Current (A)   Limited by rDS(on) 10, 100 ms 10 1 ms 10 ms 1   dc        0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1s 0.1 TA – Ambient Temperature (C) 1 100 ms TA = 25C Single Pulse Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 Square Wave Pulse Duration (sec) Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054  Phone (408)988-8000  FaxBack (408)970-5600  www.siliconix.com S-57253—Rev. F, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors 1-54 30 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000