SUD45P04-16P-GE3

SUD45P04-16P Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0162 at VGS = - 10 V - 36 0.0230 at VGS = - 4.5 V - 24 Qg (Typ.) 67 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-252 • Power Switch • Load Switch in High Current Applications • DC/DC Converters S Drain Connected to Tab G D S G Top View Ordering Information: SUD45P04-16P-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed Drain Current (t = 300 µs) Avalanche Current Single Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cc ID V - 36 - 29 IDM - 100 IAS - 32 EAS 51 PD Unit 41.7 A mJ b 2.1 W TJ, Tstg - 55 to 150 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient (PCB Mount)c RthJA 60 Junction-to-Case (Drain) RthJC 3 °C/W Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 63372 S11-1657-Rev. A, 15-Aug-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD45P04-16P Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = - 250 µA - 40 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS - 2.5 ± 250 VDS = - 40 V, VGS = 0 V -1 VDS = - 40 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 40 V, VGS = 0 V, TJ = 150 °C - 250 VDS - 10 V, VGS = - 10 V ID(on) RDS(on) gfs - 50 V nA µA A VGS = - 10 V, ID = - 14 A 0.0135 0.0162 VGS = - 4.5 V, ID = - 12 A 0.0190 0.0230 VDS = - 20 V, ID = - 14 A 40  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge 67 VDS = - 20 V, VGS = - 10 V, ID = - 14 A Rise Timec Fall Timec f = 1 MHz td(on) tr c td(off) 100 nC 13.5 14 Rg Turn-On Delay Timec pF 330 280 Qgd Gate Resistance Turn-Off Delay Time 2765 VGS = 0 V, VDS = - 20 V, f = 1 MHz VDD = - 20 V, RL = 2  ID  - 10 A, VGEN = - 10 V, Rg = 1  tf Drain-Source Body Diode Ratings and Characteristics TC = 25 °C 0.5 2.5 5 10 20 11 20 42 63 12 20 - 36 Pulsed Current ISM - 100 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = - 10 A, VGS = 0 V - 0.8 IF = - 10 A, dI/dt = 100 A/µs 40 trr IRM(REC) Qrr ns b IS Continuous Current  A - 1.5 V 38 57 ns 2.3 3.5 A 60 nC Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 63372 S11-1657-Rev. A, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD45P04-16P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 0.030 VGS = 10 V thru 4 V 0.025 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 30 20 10 VGS = 3 V VGS = 4.5 V 0.020 0.015 VGS = 10 V 0.010 0.005 0 0 0.5 1 1.5 0 2 20 40 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Output Characteristics 80 100 On-Resistance vs. Drain Current 1.0 0.040 ID = 14 A 0.034 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 0.8 0.6 TC = 25 °C 0.4 0.2 TC = 125 °C TC = - 55 °C 0 0 0.7 1.4 2.1 2.8 0.028 0.016 TJ = 25 °C 0.010 2 3.5 4 6 8 10 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 50 10 TC = 25 °C ID = 14 A VGS - Gate-to-Source Voltage (V) TC = - 55 °C 40 g fs - Transconductance (S) TJ = 125 °C 0.022 30 TC = 125 °C 20 10 8 VDS = 20 V 6 VDS = 10 V 4 VDS = 32 V 2 0 0 0 6 12 18 ID - Drain Current (A) Transconductance Document Number: 63372 S11-1657-Rev. A, 15-Aug-11 24 30 0 14 28 42 56 70 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD45P04-16P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.3 100 2.0 TJ = 150 °C 10 VGS(th) (V) IS - Source Current (A) ID = 250 μA 1.7 TJ = 25 °C 1 1.4 1.1 - 50 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 - 25 0 25 50 75 100 VSD - Source-to-Drain Voltage (V) TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 4300 125 150 125 150 51 VDS (V) Drain-to-Source Voltage ID = 250 μA C - Capacitance (pF) 3440 Ciss 2580 1720 860 Coss 49 47 45 Crss 43 - 50 0 0 10 20 30 VDS - Drain-to-Source Voltage (V) 40 - 25 0 25 50 75 100 TJ - Temperature (°C) Capacitance Drain Source Breakdown vs. Junction Temperature 2.2 40 VGS = 10 V 1.9 30 ID - Drain Current (A) RDS(on) - On-Resistance (Normalized) ID = 14 A 1.6 VGS = 4.5 V 1.3 20 10 1.0 0.7 - 50 0 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 50 75 100 TC - Case Temperature (°C) On-Resistance vs. Junction Temperature Current Derating www.vishay.com 4 0 25 125 150 Document Number: 63372 S11-1657-Rev. A, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD45P04-16P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 100 IDAV (A) TJ = 150 °C ID - Drain Current (A) 100 TJ = 25 °C 10 100 μs 10 1 ms Limited by R DS(on)* 10 ms DC, 1 s, 100 ms 1 0.1 1 0.000001 TC = 25 °C Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 0.1 Time (s) Single Pulse Avalanche Current Capability vs. Time BVDSS Limited 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63372. Document Number: 63372 S11-1657-Rev. A, 15-Aug-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 Notes • Dimension L3 is for reference only. Revision: 16-May-16 Document Number: 71197 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000