SUD50N02-09P-GE3

SUD50N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 20 0.017 @ VGS = 4.5 V 15 APPLICATIONS VDS (V) 20 D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested D D D D D High-Side Synchronous Buck DC/DC Conversion − Desktop − Server G S Top View S Ordering Information: SUD50N02-09P SUD50N02-09P—E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "20 TA = 25_C Continuous Drain Currenta TC= 100_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current L = 0.1 0 1 mH Single Pulse Avalanche Energy TA = 25_C Maximum Power Dissipation TC = 25_C Operating Junction and Storage Temperature Range Unit V 20 ID 14 IDM 100 IS 4.3 IAS 29 EAS A 42 mJ 6.5a PD W 39.5 TJ, Tstg −55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Symbol t v 10 sec Steady State RthJA RthJC Typical Maximum 19 23 40 50 3.1 3.8 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package Document Number: 72034 S-41168—Rev. C, 14-Jun-04 www.vishay.com 1 SUD50N02-09P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max Unit V(BR)DSS VGS = 0 V, ID = 250 mA 20 VGS(th) VDS = VGS, ID = 250 mA 0.8 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 125_C 50 Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 0.0095 0.014 VGS = 4.5 V, ID = 20 A Forward Transconductanceb gfs mA A 0.008 VGS = 10 V, ID = 20 A, TJ = 125_C rDS(on) nA 50 VGS = 10 V, ID = 20 A Drain-Source Drain Source On On-State State Resistanceb V 3.0 0.0135 VDS = 15 V, ID = 20 A W 0.017 15 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance 1300 VGS = 0 V, VDS = 10 V, f = 1 MHz 470 10.5 1.6 tr Turn-Off Delay Timec VDD = 10 V, RL = 0.2 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W td(off) Fall Timec nC 4.0 td(on) Rise Timec 16 4.2 VDS = 10 V, VGS = 4.5 V, ID = 50 A Rg Turn-On Delay Timec pF p 275 tf 4.0 6 8 12 10 15 25 40 12 20 W ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM Diode Forward Voltageb VSD IF = 50 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 35 70 ns Source-Drain Reverse Recovery Time 100 A Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 100 VGS = 10 thru 6 V 80 I D − Drain Current (A) I D − Drain Current (A) TC = −55_C 5V 80 60 4V 40 20 25_C 60 125_C 40 20 3V 0 0 0 2 4 6 8 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 10 0 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Document Number: 72034 S-41168—Rev. C, 14-Jun-04 SUD50N02-09P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance On-Resistance vs. Drain Current 60 0.030 g fs − Transconductance (S) 50 r DS(on)− On-Resistance ( W ) TC = −55_C 25_C 40 125_C 30 20 10 0 0.025 VGS = 4.5 V 0.020 0.015 VGS = 10 V 0.010 0.005 0.000 0 10 20 30 40 50 0 20 40 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) 100 16 20 Gate Charge 10 1600 Ciss 1200 800 Coss 400 Crss 0 VDS = 10 V ID = 50 A 8 6 4 2 0 0 4 8 12 16 20 0 4 VDS − Drain-to-Source Voltage (V) 1.6 8 12 Qg − Total Gate Charge (nC) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 VGS = 10 V ID = 30 A I S − Source Current (A) 1.8 rDS(on) − On-Resiistance (Normalized) 80 ID − Drain Current (A) Capacitance 2000 60 1.4 1.2 1.0 TJ = 150_C TJ = 25_C 10 0.8 0.6 −50 −25 0 25 50 75 100 125 TJ − Junction Temperature (_C) Document Number: 72034 S-41168—Rev. C, 14-Jun-04 150 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) www.vishay.com 3 SUD50N02-09P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Limited by rDS(on) 20 10, 100 ms 100 I D − Drain Current (A) I D − Drain Current (A) Safe Operating Area 1000 25 15 10 5 1 ms 10 10 ms TA = 25_C Single Pulse 0.1 0 0 25 50 75 100 125 150 100 ms 1s 10 s 100 s dc 1 0.01 175 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) TA − Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 1000 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72034 S-41168—Rev. C, 14-Jun-04 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1