SUD50N03-06P-E3

SUD50N03-06P Vishay Siliconix N-Channel 30-V (D-S) 175 _C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0065 at VGS = 10 V 84b 0.0095 at VGS = 4.5 V 59b VDS (V) 30 D TrenchFETr Power MOSFET D 175 _C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation D 100 % Rg Tested * APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-252 D Drain Connected to Tab G D G S Top View S Ordering Information: SUD50N03-06P SUD50N03-06P–E3 (Lead (Pb)–free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 TC = 25 _C Continuous Drain Currenta TC = 100 _C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current L=0 0.1 1 mH Avalanche Energy TA = 25 _C Operating Junction and Storage Temperature Range V 84b ID 59b IDM 100 IS 25 IAS 45 EAS 101.25 TC = 25 _C Maximum Power Dissipation Unit A mJ 88 PD W 8.3a TJ, Tstg _C –55 to 175 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction Junction-to-Ambient to Ambienta Steady State Maximum Junction-to-Case RthJA RthJC Typical Maximum 15 18 40 50 1.4 1.7 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Based on maximum allowable Junction Temperature, package limitation current is 50 A. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 71844 S-52636—Rev. D, 02-Jan-06 www.vishay.com 1 SUD50N03-06P Vishay Siliconix SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = " 20 V " 100 VDS = 30 V, VGS = 0 V 1 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 125 _C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 3.0 A 0.0053 VGS = 10 V, ID = 20 A, TJ = 125 _C rDS(on) gfs 0.0065 0.0105 VGS = 4.5 V, ID = 20 A Forward Transconductanceb 0.0078 VDS = 15 V, ID = 20 A nA mA 50 VGS = 10 V, ID = 20 A Drain-Source Drain Source On On-State State Resistanceb V W 0.0095 20 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) Rise Timec 3100 VGS = 0 V, VDS = 25 V, f = 1 MHz 1 1.9 3.1 21 30 10 VDS = 15 V, VGS = 4.5 V, ID = 50 A W nC 7.5 VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W td(off) Fall Timec pF p 255 tr Turn-Off Delay Timec 565 tf 12 20 12 20 30 45 10 15 ns Source-Drain Diode Ratings and Characteristic (TC = 25 _C) Pulsed Current ISM Diode Forward Voltageb VSD IF = 100 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 35 70 ns Source-Drain Reverse Recovery Time 100 A Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2 %. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Output Characteristics Transfer Characteristics 200 100 VGS = 10 thru 6 V 5V 80 I D – Drain Current (A) I D – Drain Current (A) 160 120 80 4V 40 60 40 TC = 125 _C 20 25 _C –55 _C 3V 0 0 0 2 4 6 8 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 10 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Document Number: 71844 S-52636—Rev. D, 02-Jan-06 SUD50N03-06P Vishay Siliconix TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Transconductance On-Resistance vs. Drain Current 120 0.0150 TC = –55 _C 0.0125 rDS(on) – On-Resistance (W) g fs – Transconductance (S) 100 25 _C 80 125 _C 60 40 0.0100 VGS = 4.5 V 0.0075 VGS = 10 V 0.0050 20 0.0025 0 0.0000 0 10 20 30 40 50 0 20 40 ID – Drain Current (A) 80 100 40 50 ID – Drain Current (A) Capacitance Gate Charge 10 4000 V GS – Gate-to-Source Voltage (V) Ciss 3500 C – Capacitance (pF) 60 3000 2500 2000 1500 Coss 1000 Crss 500 VDS = 15 V ID = 50 A 8 6 4 2 0 0 0 5 10 15 20 25 30 0 10 VDS – Drain-to-Source Voltage (V) 20 30 Qg – Total Gate Charge (nC) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.0 100 1.5 I S – Source Current (A) rDS(on) – On-Resistance (Normalized) VGS = 10 V ID = 20 A 1.0 0.5 0.0 –50 TJ = 150 _C TJ = 25 _C 10 1 –25 0 25 50 75 100 125 TJ – Junction Temperature (_C) Document Number: 71844 S-52636—Rev. D, 02-Jan-06 150 175 0 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) www.vishay.com 3 SUD50N03-06P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area 1000 30 Limited by rDS(on) 10, 100 ms 100 I D – Drain Current (A) I D – Drain Current (A) 24 18 12 6 10 1 ms 10 ms 100 ms 1 TA = 25 _C Single Pulse 0.1 0 1s 10 s 100 s dc 0.01 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TA – Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71844 S-52636—Rev. D, 02-Jan-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1