SUD50N03-12P
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
30
a
ID (A)
0.0120 at VGS = 10 V
17.5
0.0175 at VGS = 4.5 V
14.5
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
TO-252
D
G
Drain Connected to Tab
G
D
S
Top View
S
Ordering Information: SUD50N03-12P-E3 (Lead (PB) free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
TA = 25 °C
Continuous Drain Currenta
TA = 100 °C
Pulsed Drain Current
Continuous Source Current (Diode
Conduction)a
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TA = 25 °C
V
17.5
ID
12.4
IDM
40
IS
5
IAS
30
EAS
45
A
mJ
46.8
PD
W
6.5a
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Symbol
a
Maximum Junction-to-Case
t 10 s
Steady State
RthJA
RthJC
Typical
Maximum
18
23
40
50
2.6
3.2
Unit
°C/W
Note:
a. Surface mounted on FR4 board, t 10 s.
Document Number: 72267
S12-0335-Rev. C, 13-Feb-12
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50N03-12P
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min .
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
VDS
VGS(th)
IGSS
30
1
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 125 °C
VDS =5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125 °C
VGS = 4.5 V, ID = 15 A
VDS = 15 V, ID = 20 A
Drain-Source On-State Resistanceb
RDS(on)
Forward Transconductanceb
Dynamica
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gfs
Typ.a
Max.
Unit
V
3
± 100
1
50
nA
µA
40
A
0.0100
0.0120
0.0170
0.0175
0.0138
15
Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss
Crss
Qg
Total Gate Chargec
c
VDS = 15 V, VGS = 10 V, ID = 50 A
Q
Gate-Source Charge
gs
c
Q
Gate-Drain Charge
gd
f = 1 MHz
Gate Resistance
Rg
c
t
Turn-On Delay Time
d(on)
VDD = 15 V, RL = 0.3
tr
Rise Timec
ID 50 A, VGEN = 10 V, RG = 2.5
td(off)
Turn-Off Delay Timec
tf
Fall Timec
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
Pulsed Current
ISM
VSD
IF = 40 A, VGS = 0 V
Diode Forward Voltageb
IF = 50 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
trr
S
0.3
1600
285
140
28
6
5
1.5
9
15
20
12
3.0
15
25
30
20
1.2
25
100
1.5
70
pF
42
nC
ns
A
V
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C unless noted)
80
80
60
60
40
I D - Drain Current (A)
I D - Drain Current (A)
VGS = 10 thru 5 V
4V
20
40
TC = 125 °C
20
25 °C
3V
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
- 55 °C
5
0
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 72267
S12-0335-Rev. C, 13-Feb-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50N03-12P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless noted)
80
0.05
60
R DS(on) - On-Resistance ()
g fs - Transconductance (S)
TC = - 55 °C
25 °C
125 °C
40
20
0
0.04
0.03
VGS = 4.5 V
0.02
VGS = 10 V
0.01
0.00
0
10
20
30
40
50
0
20
Transconductance
80
V GS - Gate-to-Source Voltage (V)
10
2000
Ciss
1500
1000
500
Coss
Crss
0
VDS = 15 V
ID = 50 A
8
6
4
2
0
0
5
10
15
20
25
30
0
6
VDS - Drain-to-Source Voltage (V)
12
24
30
Gate Charge
1.8
100
VGS = 10 V
ID = 15 A
I S - Source Current (A)
1.6
18
Qg - Total Gate Charge (nC)
Capacitance
RDS(on) - On-Resistance (Normalized)
60
On-Resistance vs. Drain Current
2500
C - Capacitance (pF)
40
ID - Drain Current (A)
ID - Drain Current (A)
1.4
1.2
1.0
TJ = 150 °C
TJ = 25 °C
10
0.8
0.6
- 50
1
- 25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: 72267
S12-0335-Rev. C, 13-Feb-12
1.5
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50N03-12P
Vishay Siliconix
THERMAL RATINGS
1000
20
Limited
by R DS(on) *
100
ID - Drain Current (A)
I D - Drain Current (A)
16
12
8
10, 100 µs
10
1 ms
10 ms
100 ms
1
1s
0
0
25
50
75
100
125
TA - Ambient Temperature (°C)
150
0.01
175
10 s
TA = 25 °C
Single Pulse
0.1
4
0.1
DC, 100 s
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Maximum Drain Current vs. Ambient Temperature
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01 10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (sec)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01 10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (sec)
1
10
100
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72267.
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Document Number: 72267
S12-0335-Rev. C, 13-Feb-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T16-0236-Rev. P, 16-May-16
DWG: 5347
Notes
• Dimension L3 is for reference only.
Revision: 16-May-16
Document Number: 71197
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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Revision: 08-Feb-17
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Document Number: 91000