SUD50N03-16P-E3

SUD50N03-16P Vishay Siliconix New Product N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 15 0.024 @ VGS = 4.5 V 12 VDS (V) 30 D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D TO-252 Drain Connected to Tab G D D High-Side DC/DC − Desktop − Server D DDR DC/DC Converter G S Top View S Ordering Information: SUD50N03-16P—E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 TC = 25_C Continuous Drain Currenta TA = 25_C Continuous Source Current (Diode Conduction)a Avalanche Current L = 0.1 0 1 mH Single Pulse Avalanche Energy TC = 25_C Maximum Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range V 37 15 ID TA = 100_C Pulsed Drain Current Unit 10.6 IDM 40 IS 5 IAS 25 EAS 31.25 A mJ 40.8 PD W 6.5a TJ, Tstg −55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Symbol t v 10 sec Steady State RthJA RthJC Typical Maximum 18 23 40 50 3.0 3.7 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 72634 S-40466—Rev. A, 15-Mar-04 www.vishay.com 1 SUD50N03-16P Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 0.016 0.025 VGS = 4.5 V, ID = 10 A Forward Transconductanceb gfs mA A 0.0128 VGS = 10 V, ID = 20 A, TJ = 125_C rDS(on) nA 40 VGS = 10 V, ID = 15 A Drain-Source Drain Source On On-State State Resistanceb V 3.0 0.019 VDS = 15 V, ID = 20 A W 0.024 10 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance 1150 VGS = 0 V, VDS = 25 V, f = 1 MHz 215 8.5 2.7 tr Turn-Off Delay Timec VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W td(off) Fall Timec nC 2.5 td(on) Rise Timec 13 5 VDS = 15 V, VGS = 4.5 V, ID = 50 A Rg Turn-On Delay Timec pF p 70 tf 5.5 8.25 7 15 20 30 25 40 12 20 W ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM Diode Forward Voltageb VSD IF = 20 A, VGS = 0 V 1.0 1.5 V trr IF = 40 A, di/dt = 100 A/ms 25 70 ns Source-Drain Reverse Recovery Time 40 A Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 VGS = 10 thru 5 V 50 I D − Drain Current (A) I D − Drain Current (A) 50 40 4V 30 20 10 40 30 20 TC = 125_C 10 25_C 3V 0 0 0 2 4 6 8 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 −55_C 10 0 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Document Number: 72634 S-40466—Rev. A, 15-Mar-04 SUD50N03-16P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance On-Resistance vs. Drain Current 60 0.05 TC = −55_C r DS(on)− On-Resistance ( W ) g fs − Transconductance (S) 50 25_C 40 125_C 30 20 10 0 0.04 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0.00 0 5 10 15 20 25 30 0 10 20 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) Ciss C − Capacitance (pF) 900 600 Coss Crss 0 60 15 18 VDS = 15 V ID = 50 A 8 6 4 2 0 0 5 10 15 20 25 30 0 3 VDS − Drain-to-Source Voltage (V) 1.8 On-Resistance vs. Junction Temperature 9 12 Source-Drain Diode Forward Voltage 100 VGS = 10 V ID = 15 A 1.5 1.2 0.9 0.6 −50 6 Qg − Total Gate Charge (nC) I S − Source Current (A) 2.1 rDS(on) − On-Resiistance (Normalized) 50 Gate Charge 10 1200 300 40 ID − Drain Current (A) Capacitance 1500 30 −25 0 25 50 75 100 125 TJ − Junction Temperature (_C) Document Number: 72634 S-40466—Rev. A, 15-Mar-04 150 175 TJ = 150_C TJ = 25_C 10 1 0 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) www.vishay.com 3 SUD50N03-16P Vishay Siliconix New Product THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area 100 20 10 ms Limited by rDS(on) 10 I D − Drain Current (A) I D − Drain Current (A) 15 100 ms 10 5 0 0 25 50 75 100 125 150 1 ms 10 ms 100 ms 1 1s 10 s 0.1 TA = 25_C Single Pulse dc, 100 s 0.01 175 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) TA − Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72634 S-40466—Rev. A, 15-Mar-04 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1