New Product
SUD50N04-05L
Vishay Siliconix
N-Channel 40-V (D-S), 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
rDS(on) (Ω)
ID (A)c
0.0054 at VGS = 10 V
115
0.0069 at VGS = 4.5 V
102
V(BR)DSS (V)
40
• TrenchFET® Power MOSFETS
• 175 °C Junction Temperature
RoHS
COMPLIANT
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
S
N-Channel MOSFET
Ordering Information: SUD50N04-05L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 100 °C
Single Pulse Avalanche Current
a
L = 0.1 mH
Single Pulse Repetitive Avalanche Energy
Power Dissipation
TC = 25 °C
Operating Junction and Storage Temperature Range
V
115c
ID
81c
IDM
Pulsed Drain Current
Unit
A
100
IAS
50
EAS
125
mJ
PD
136
W
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambientb
Junction-to-Case
Symbol
t ≤ 10 sec
Steady State
RthJA
RthJC
Typical
Maximum
15
18
40
50
0.85
1.1
Unit
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. Surface Mounted on 1" FR4 board.
c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A.
Document Number: 72786
S-71661-Rev. B, 06-Aug-07
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New Product
SUD50N04-05L
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
V(BR)DSS
VGS = 0 V, ID = 250 µA
40
VGS(th)
VDS = VGS, ID = 250 µA
1
IGSS
VDS = 0 V, VGS = ± 20 V
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
± 100
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 125 °C
50
VDS = 40 V, VGS = 0 V, TJ = 175 °C
150
ID(on)
VDS = 5 V, VGS = 10 V
50
VGS = 10 V, ID = 20 A
Drain-Source On-State Resistancea
rDS(on)
Forward Transconductance
0.0083
VGS = 10 V, ID = 20 A, TJ = 175 °C
0.0130
VDS = 15 V, ID = 15 A
0.0055
20
nA
µA
0.0054
VGS = 10 V, ID = 20 A, TJ = 125 °C
gfs
V
A
0.0044
VGS = 4.5 V, ID = 20 A
a
3
Ω
0.0069
80
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reversen Transfer Capacitance
Crss
Total Gate Chargec
5600
VGS = 0 V, VDS = 25 V, f = 1 MHz
365
Qg
c
Gate-Source Charge
c
Qgs
pF
590
90
VDS = 20 V, VGS = 10 V, ID = 50 A
135
nC
19
Gate-Drain Charge
Qgd
19
Gate Resistance
Rg
1.6
td(on)
15
25
20
30
65
100
11
20
Turn-On Delay Time
c
c
tr
Rise Time
Turn-Off Delay Time
c
Fall Timec
td(off)
VDD = 20 V, RL = 0.4 Ω
ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω
tf
Source-Drain Diode Ratings and Characteristics (TC = 25
Ω
ns
°C)b
IS
50
Pulsed Current
ISM
100
Forward Voltagea
VSD
IF = 30 A, VGS = 0 V
0.90
1.50
V
trr
IF = 30 A, di/dt = 100 A/µs
30
45
ns
Continuous Current
Reverse Recovery Time
A
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72786
S-71661-Rev. B, 06-Aug-07
New Product
SUD50N04-05L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
120
120
VGS = 10 thru 5 V
4V
100
I D - Drain Current (A)
I D - Drain Current (A)
100
80
60
40
80
60
40
TC = 125 °C
20
20
25 °C
3V
- 55 °C
0
0.0
0
0
2
4
6
8
10
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
200
4.0
4.5
0.010
TC = - 55 °C
0.008
25 °C
120
r DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
160
125 °C
80
40
0
VGS = 4.5 V
0.006
VGS = 10 V
0.004
0.002
0.000
0
10
20
30
40
50
60
0
40
60
80
100
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
120
10
8000
V GS - Gate-to-Source Voltage (V)
7000
Ciss
C - Capacitance (pF)
20
VGS - Gate-to-Source Voltage (V)
6000
5000
4000
3000
2000
Coss
1000
VDS = 20 V
ID = 50 A
8
6
4
2
Crss
0
0
0
8
16
24
32
40
0
20
40
60
80
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 72786
S-71661-Rev. B, 06-Aug-07
100
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New Product
SUD50N04-05L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
2.0
100
VGS = 10 V
ID = 20 A
I S - Source Current (A)
rDS(on) - On-Resistance
(Normalized)
1.7
1.4
1.1
TJ = 150 °C
TJ = 25 °C
10
0.8
0.5
- 50
- 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
1
175
On-Resistance vs. Junction Temperature
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
1.5
Source-Drain Diode Forward Voltage
THERMAL RATINGS
125
200
Limited by rDS(on)
10 µs
100 µs
100
I D - Drain Current (A)
I D - Drain Current (A)
100
75
50
Limited By Package
25
25
50
75
10 ms
100 ms
dc
1
TC = 25 °C
Single Pulse
0
0
1 ms
10
100
125
150
175
0.1
0.1
TC - Case Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
1
10
VDS - Drain-to-Source Voltage (V)
50
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10- 4
10- 3
10- 2
Square Wave Pulse Duration (sec)
10- 1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72786.
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Document Number: 72786
S-71661-Rev. B, 06-Aug-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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