New Product
SUD50N06-07L
Vishay Siliconix
N-Channel 60-V (D-S), 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
rDS(on) (Ω)
ID (A)c
0.0074 at VGS = 10 V
96
0.0088 at VGS = 4.5 V
88
V(BR)DSS (V)
60
• TrenchFET® Power MOSFETS
• 175 °C Junction Temperature
RoHS
COMPLIANT
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
S
Ordering Information: SUD50N06-07L-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
67c
IDM
Pulsed Drain Current
Single Pulse Avalanche Current
a
Single Pulse Repetitive Avalanche Energy
L = 0.1 mH
Power Dissipation
TC = 25 °C
Operating Junction and Storage Temperature Range
V
96c
ID
TC = 100 °C
Unit
A
100
IAS
45
EAS
101
mJ
PD
136
W
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambientb
Junction-to-Case
Symbol
t ≤ 10 sec
Steady State
RthJA
RthJC
Typical
Maximum
15
18
40
50
0.85
1.1
Unit
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. Surface Mounted on 1" FR4 board.
c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A.
Document Number: 72953
S-71661-Rev. B, 06-Aug-07
www.vishay.com
1
New Product
SUD50N06-07L
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
V(BR)DSS
VGS = 0 V, ID = 250 µA
60
VGS(th)
VDS = VGS, ID = 250 µA
1
IGSS
VDS = 0 V, VGS = ± 20 V
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
± 100
VDS = 60 V, VGS = 0 V
1
VDS = 60 V, VGS = 0 V, TJ = 125 °C
50
VDS = 60 V, VGS = 0 V, TJ = 175 °C
150
ID(on)
VDS = 5 V, VGS = 10 V
50
VGS = 10 V, ID = 20 A
Drain-Source On-State Resistancea
rDS(on)
Forward Transconductance
0.0122
VGS = 10 V, ID = 20 A, TJ = 175 °C
0.0148
VDS = 15 V, ID = 15 A
0.0071
20
nA
µA
0.0074
VGS = 10 V, ID = 20 A, TJ = 125 °C
gfs
V
A
0.0061
VGS = 4.5 V, ID = 20 A
a
3
Ω
0.0088
80
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reversen Transfer Capacitance
Crss
Total Gate Chargec
5800
VGS = 0 V, VDS = 25 V, f = 1 MHz
300
Qg
c
Gate-Source Charge
c
Qgs
pF
450
96
VDS = 30 V, VGS = 10 V, ID = 50 A
144
nC
19
Gate-Drain Charge
Qgd
20
Gate Resistance
Rg
1.5
td(on)
15
25
13
20
62
95
14
25
Turn-On Delay Time
c
c
tr
Rise Time
Turn-Off Delay Time
c
Fall Timec
td(off)
VDD = 30 V, RL = 0.6 Ω
ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω
tf
Source-Drain Diode Ratings and Characteristics (TC = 25
Ω
ns
°C)b
IS
50
Pulsed Current
ISM
100
Forward Voltagea
VSD
IF = 30 A, VGS = 0 V
0.90
1.50
V
trr
IF = 30 A, di/dt = 100 A/µs
37
55
ns
Continuous Current
Reverse Recovery Time
A
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72953
S-71661-Rev. B, 06-Aug-07
New Product
SUD50N06-07L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
120
120
VGS = 10 thru 4 V
100
I D - Drain Current (A)
I D - Drain Current (A)
100
80
60
40
80
60
40
TC = 125 °C
20
20
25 °C
3V
- 55 °C
0
0.0
0
0
1
2
3
4
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
200
4.0
0.015
TC = - 55 °C
25 °C
0.012
r DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
160
125 °C
120
80
40
0
0.009
VGS = 4.5 V
0.006
VGS = 10 V
0.003
0.000
0
10
20
30
40
50
60
0
40
60
80
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
100
10
8000
V GS - Gate-to-Source Voltage (V)
7000
Ciss
C - Capacitance (pF)
20
6000
5000
4000
3000
2000
Coss
1000
Crss
0
0
VDS = 30 V
ID = 50 A
8
6
4
2
0
10
20
30
40
50
60
0
20
40
60
80
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 72953
S-71661-Rev. B, 06-Aug-07
100
www.vishay.com
3
New Product
SUD50N06-07L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
2.0
100
VGS = 10 V
ID = 20 A
I S - Source Current (A)
rDS(on) - On-Resistance
(Normalized)
1.7
1.4
1.1
TJ = 150 °C
TJ = 25 °C
10
0.8
0.5
- 50
1
TJ - Junction Temperature (°C)
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
- 25
0
25
50
75
100
125
150
175
1.5
THERMAL RATINGS
200
125
100
Limited by rDS(on)
10 µs
100 µs
I D - Drain Current (A)
I D - Drain Current (A)
100
75
50
Limited By Package
25
25
50
75
1 ms
10 ms
dc, 100 ms
1
TC = 25 °C
Single Pulse
0
0
10
100
125
150
175
0.1
0.1
TC - Case Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
1
10
VDS - Drain-to-Source Voltage (V)
100
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10- 4
10- 3
10- 2
Square Wave Pulse Duration (sec)
10- 1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72953.
www.vishay.com
4
Document Number: 72953
S-71661-Rev. B, 06-Aug-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
