SUD50N06-08H-E3

New Product SUD50N06-08H Vishay Siliconix N-Channel 60-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)c Qg (Typ) 60 0.0078 at VGS = 10 V 93 94 TrenchFET® Power MOSFET 175 °C Junction Temperature 100 % Rg Tested High Threshold at High Temperature • • • • RoHS COMPLIANT TO-252 D G Drain Connected to Tab G D S Top View S N-Channel MOSFET Ordering Information: SUD50N06-08H0-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C 54c 100 Continuous Source Current (Diode Conduction) IS 91c Avalanche Current, Single Pulse IAS 50 EAS 125 Avalanche Energy Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C A mJ b 136 PD W 3a TJ, Tstg Operating Junction and Storage Temperature Range V 93c ID IDM Pulsed Drain Current Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case Symbol t ≤ 10 sec Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. See SOA curve for voltage derating. c. Calculate continuous current based on maximum allowable junction temperature when using infinite heat sink. Package limitation current is 50 A. Document Number: 73160 S-71661-Rev. B, 06-Aug-07 www.vishay.com 1 New Product SUD50N06-08H Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typa Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 3.4 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 IDSS 4.5 VDS = 60 V, VGS = 0 V, TJ = 175 °C b On-State Drain Current VDS = 5 V, VGS = 10 V Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 20 A, TJ = 125 °C 0.013 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.0156 50 VGS = 10 V, ID = 20 A gfs nA µA 250 ID(on) Forward Transconductanceb V A 0.0065 VDS = 15 V, ID = 20 A 0.0078 25 Ω S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss c f = 1 MHz Qg Gate-Source Chargec Qgs c pF 450 240 Rg Gate Resistance Total Gate Charge 7000 VGS = 0 V, VDS = 25 V, F = 1 MHz VDS = 30 V, VGS = 10 V, ID = 50 A 0.75 1.5 2.3 94 145 nC 35 Gate-Drain Charge Qgd 20 Turn-On Delay Timec td(on) 28 45 13 20 50 75 10 15 Rise Timec tr Turn-Off Delay Timec td(off) Fall Timec VDD = 30 V, RL = 0.6 Ω ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω tf Ω ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C) ISM Pulsed Current Diode Forward Voltage b Source-Drain Reverse Recovery Time 100 A VSD IF = 50 A, VGS = 0 V 1.0 1.5 V trr IF = 50 A, di/dt = 100 A/µs 45 70 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73160 S-71661-Rev. B, 06-Aug-07 New Product SUD50N06-08H Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100 VGS = 10 thru 6 V 80 I D - Drain Current (A) I D - Drain Current (A) 80 60 40 20 5V 40 TC = 125 °C 20 25 °C - 55 °C 0 0 0 2 4 6 8 0 10 2 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6 0.015 r DS(on) - On-Resistance (Ω) 25 °C TC = - 55 °C 125 125 °C 100 75 50 25 0 0.012 0.009 VGS = 10 V 0.006 0.003 0.000 0 10 20 30 40 50 60 0 20 40 60 80 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 100 20 9000 8000 V GS - Gate-to-Source Voltage (V) Ciss 7000 C - Capacitance (pF) 1 VDS - Drain-to-Source Voltage (V) 150 g fs - Transconductance (S) 60 6000 5000 4000 3000 2000 Crss Coss 1000 VDS = 30 V ID = 50 A 16 12 8 4 0 0 0 10 20 30 40 50 60 0 40 80 120 160 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 73160 S-71661-Rev. B, 06-Aug-07 200 www.vishay.com 3 New Product SUD50N06-08H Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 100 VGS = 10 V ID = 20 A TJ = 150 °C I S - Source Current (A) rDS(on) - On-Resistance (Normalized) 1.7 1.4 1.1 10 TJ = 25 °C 0.8 0.5 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 1 175 0 0.3 0.6 0.9 VSD - Source-to-Drain Voltage (V) 1.2 Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature THERMAL RATINGS 1000 125 100 I D - Drain Current (A) I D - Drain Current (A) 100 75 50 Limited by Package *Limited by rDS(on) 100 µs 10 1 ms 10 ms 100 ms dc 1 TC = 25 °C Single Pulse 25 0.1 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 175 10 µs 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS > minimum V GS at which rDS(on) is specified Maximum Avalanche Drain Current vs. Case Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73160. www.vishay.com 4 Document Number: 73160 S-71661-Rev. B, 06-Aug-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1