SUD50N10-18P-GE3
Vishay Siliconix
N-Channel 100 V (D-S), 150 °C MOSFET
FEATURES
PRODUCT SUMMARY
• TrenchFET® Power MOSFET
VDS (V)
RDS(on) ()
ID (A)a
Qg (Typ.)
100
0.0185 at VGS = 10 V
50
48 nC
TO-252
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
D
• Primary Side Switch
• Isolated DC/DC Converter
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information:
SUD50N10-18P-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
± 20
TC = 100 °C
TA = 25 °C
33.4
ID
7.8b
5b
TA = 100 °C
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
TC = 25 °C
TA = 25 °C
L = 0.1 mH
Avalanche Energy
TC = 100 °C
TA = 25 °C
50a
IS
1.7b
IAS
45
EAS
101
mJ
113.6
45.5
PD
W
2.5b
1b
TA = 100 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
100
TC = 25 °C
Maximum Power Dissipation
V
50a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
°C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Steady State
Maximum Junction-to-Case
Symbol
Typical
Maximum
RthJA
40
50
RthJC
0.85
1.1
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Document Number: 65717
S12-1958-Rev. C, 13-Aug-12
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50N10-18P-GE3
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
100
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
Drain-Source On-State Resistancea
V
110
2.5
5
V
± 100
nA
VDS = 100 V, VGS = 0 V
1
VDS = 100 V, VGS = 0 V, TJ = 125 °C
50
ID(on)
VDS 5 V, VGS = 10 V
RDS(on)
VGS = 10 V, ID = 15 A
0.0150
gfs
VDS = 15 V, ID = 15 A
33
Forward Transconductancea
mV/°C
- 12.5
50
µA
A
0.0185
S
Dynamicb
Input Capacitance
Ciss
2600
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
80
Total Gate Charge
Qg
48
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
VDS = 50 V, VGS = 0 V, f = 1 MHz
VDS = 50 V, VGS = 10 V, ID = 50 A
f = 1 MHz
td(on)
Rise Time
VDD = 50 V, RL = 1
ID 50 A, VGEN = 10 V, Rg = 1
tr
Turn-Off Delay Time
td(off)
Fall Time
pF
75
16
nC
13
Rg
Turn-On Delay Time
230
tf
1.6
2.5
12
20
10
20
18
35
8
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
50
100
IS = 15 A
IF = 50 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.85
1.5
V
80
120
ns
160
240
nC
57
23
ns
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 65717
S12-1958-Rev. C, 13-Aug-12
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50N10-18P-GE3
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
2.0
VGS = 10 V thru 8 V
1.6
I D - Drain Current (A)
I D - Drain Current (A)
80
VGS = 7 V
60
40
20
1.2
0.8
TC = 25 °C
0.4
VGS = 6 V
TC = 125 °C
TC = - 55 °C
0
0.0
0
1
2
3
4
5
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
10
0.036
75
45
R DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
TC = - 55 °C
60
TC = 25 °C
TC = 125 °C
30
15
0.027
VGS = 10 V
0.018
0.009
0.000
0
0
10
20
30
40
0
50
20
40
60
80
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
100
3500
0.10
2800
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
ID = 15 A
0.08
0.06
0.04
TA = 150 °C
Ciss
2100
1400
700
0.02
Coss
TA = 25 °C
0
0.00
4
5
6
7
8
9
10
Crss
0
20
40
60
80
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Capacitance
Document Number: 65717
S12-1958-Rev. C, 13-Aug-12
For technical questions, contact: pmostechsupport@vishay.com
100
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50N10-18P-GE3
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
2.5
ID = 15 A
VDS = 50 V
15
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 20 A
VDS = 80 V
10
5
20
40
60
80
100
1.0
- 25
0
25
50
75
100
125
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
0.7
TJ = 150 °C
0.2
VGS(th) Variance (V)
10
I S - Source Current (A)
1.5
Qg - Total Gate Charge (nC)
100
TJ = 25 °C
1
0.1
- 0.3
ID = 5 mA
- 0.8
ID = 250 µA
- 1.3
0.01
0.001
0.0
VGS = 10 V
0.5
- 50
0
0
2.0
0.2
0.4
0.6
0.8
1.0
- 1.8
- 50
1.2
- 25
0
VSD - Source-to-Drain Voltage (V)
25
50
75
100
125
150
TJ - Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
600
300
500
240
120
Power (W)
Power (W)
400
180
TA = 25 °C
300
200
TC = 25 °C
60
0
0.001
100
0.01
0.1
1
10
100
1000
0
0.001
0.01
Single Pulse Power, Junction-to-Ambient
Document Number: 65717
S12-1958-Rev. C, 13-Aug-12
0.1
1
10
Time (s)
Time (s)
Single Pulse Power, Junction-to-Case
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50N10-18P-GE3
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1000
1000
Limited by R DS(on)*
100 µs
10
1 ms
1
10 ms
100 ms
TA = 25 °C
Single Pulse
0.1
1s
1
10 µs
100 µs
10
1 ms
10 ms
100 ms, DC
1
TC = 25 °C
Single Pulse
0.1
10 s
100 s, DC
BVDSS Limited
0.01
0.1
Limited by R DS(on)*
100
10 µs
I D - Drain Current (A)
I D - Drain Current (A)
100
10
100
BVDSS Limited
0.01
0.1
1000
10
100
1000
Safe Operating Area, Junction-to-Case
Safe Operating Area, Junction-to-Ambient
10
60
50
I D - Drain Current (A)
8
I D - Drain Current (A)
1.0
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
6
4
2
Package Limited
40
30
20
10
0
0
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Current Derating**, Junction-to-Ambient
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating**, Junction-to-Case
** The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65717
S12-1958-Rev. C, 13-Aug-12
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50N10-18P-GE3
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.5
160
3.0
140
120
Power (W)
Power (W)
2.5
2.0
1.5
1.0
100
80
60
40
0.5
20
0
0.0
0
25
50
75
100
125
TA - Ambient Temperature (°C)
Power Derating**, Junction-to-Ambient
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating**, Junction-to-Case
** The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65717
S12-1958-Rev. C, 13-Aug-12
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
6
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50N10-18P-GE3
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 50 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
10 -2
4. Surface Mounted
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65717.
Document Number: 65717
S12-1958-Rev. C, 13-Aug-12
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Revision: 01-Jan-2022
1
Document Number: 91000
