New Product
SUD50P04-13L
Vishay Siliconix
P-Channel 40-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 40
rDS(on) (Ω)
ID (A)
0.013 at VGS = - 10 V
- 60a
0.022 at VGS = - 4.5 V
- 48
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
RoHS
COMPLIANT
S
TO-252
G
Drain Connected to Tab
G
D
S
Top View
D
Ordering Information: SUD50P04-13L-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 40
Gate-Source Voltage
VGS
± 20
Continuous Drain Currentb
TC = 25 °C
TC = 100 °C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
L = 0.1 mH
Avalanche Energy,
Maximum Power Dissipationb
TC = 25 °C
TA = 25 °C
V
- 60c
ID
- 43
IDM
- 100
IS
- 60c
IAS
- 40
EAS
80
mJ
93.7b
PD
W
3a
TJ, Tstg
Operating Junction and Storage Temperature Range
Unit
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Symbol
t ≤ 10 sec
Steady State
RthJA
RthJC
Maximum Junction-to-Case (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
b. Calculated based on maximum allowed Junction Temperature. Package limitation current is 50 A.
Document Number: 73009
S-71660-Rev. B, 06-Aug-07
Typical
Maximum
Unit
15
40
1.3
18
50
1.8
°C/W
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New Product
SUD50P04-13L
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V(BR)DSS
VGS = 0 V, ID = - 250 µA
- 40
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.0
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
VDS = - 40 V, VGS = 0 V
-1
VDS = - 40 V, VGS = 0 V, TJ = 125 °C
- 50
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 10 V
- 50
VGS = - 10 V, ID = - 30 A
Drain-Source On-State Resistancea
rDS(on)
gfs
VGS = - 10 V, ID = - 30 A, TJ = 125 °C
VDS = - 15 V, ID = - 30 A
V
nA
µA
A
0.0105
0.013
0.020
VGS = - 4.5 V, ID = - 20 A
Forward Transconductancea
- 3.0
0.017
Ω
0.022
15
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Rg
Gate Resistance
Total Gate Charge
c
Gate-Source Chargec
c
3120
VDS = - 25 V, VGS = 0 V, f = 1 MHz
320
f = 1 MHz
Qg
Qgs
pF
440
63
VDS = - 20 V, VGS = - 10 V, ID = - 50 A
Ω
4.3
95
nC
13
Gate-Drain Charge
Qgd
16
Turn-On Delay Timec
td(on)
15
25
18
30
60
90
47
70
Rise
Timec
tr
Turn-Off Delay Timec
Fall Timec
td(off)
VDD = - 20 V, RL = 0.4 Ω
ID ≅ - 50 A, VGEN = - 10 V, Rg = 2.5 Ω
tf
ns
Drain-Source Body Diode Characteristics
Pulse Current
Forward Voltage
ISM
a
Source-Drain Reverse Recovery Time
- 100
VSD
IF = - 50 A, VGS = 0 V
- 1.0
- 1.5
V
trr
IF = - 50 A, di/dT = 100 A/µs
36
55
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73009
S-71660-Rev. B, 06-Aug-07
New Product
SUD50P04-13L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
100
100
VGS = 10 thru 5 V
80
I D - Drain Current (A)
ID - Drain Current (A)
80
60
4V
40
20
60
40
TC = 125 °C
20
2V
25 °C
3V
- 55 °C
0
0
2
4
6
8
0
0.0
10
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
80
0.05
TC = - 55 °C
r DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
70
60
50
25 °C
40
125 °C
30
20
0.04
0.03
VGS = 4.5 V
0.02
VGS = 10 V
0.01
10
0
0.00
0
10
20
30
40
50
0
20
40
VGS - Gate-to-Source Voltage (V)
60
80
100
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
5000
10
V GS - Gate-to-Source Voltage (V)
4500
C - Capacitance (pF)
4000
Ciss
3500
3000
2500
2000
1500
1000
Coss
500
VDS = 20 V
ID = 50 A
8
6
4
2
Crss
0
0
0
8
16
24
32
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 73009
S-71660-Rev. B, 06-Aug-07
40
0
8
16
24
32
40
48
56
64
Qg - Total Gate Charge (nC)
Gate Charge
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New Product
SUD50P04-13L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
1.8
100
VGS = 10 V
ID = 30 A
TJ = 150 °C
I S - Source Current (A)
rDS(on) − On-Resistance
(Normalized)
1.6
1.4
1.2
1.0
TJ = 25 °C
10
0.8
0.6
- 50
1
- 25
0
25
50
75
100
125
150
0
175
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
200
75
Limited by rDS(on)
100
10 µs
100 µs
I D - Drain Current (A)
I D - Drain Current (A)
60
45
Limited By Package
30
10
1 ms
10 ms
100 ms
DC
1
TC = 25 °C
Single Pulse
15
0
0.1
0
25
50
75
100
125
150
175
0.1
TC - Case Temperature (°C)
1
10
100
VDS - Drain-to-Source Voltage (V)
Maximum Avalanche Drain Current
vs. Case Temperature
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
100
1K
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73009
S-71660-Rev. B, 06-Aug-07
SUD50P04-13L
Vishay Siliconix
THERMAL RATINGS
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
1 00
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73009
Document Number: 73009
S-71660-Rev. B, 06-Aug-07
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Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000
