SUD50P04-15-E3

SUD50P04-15 New Product Vishay Siliconix P-Channel 40-V (D-S), 175C MOSFET     VDS (V) –40 rDS(on) (
) ID (A) 0.015 @ VGS = –10 V –50 0.023 @ VGS = –4.5 V –45 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50P04-15 D P-Channel MOSFET            Parameter Symbol Limit Drain-Source Voltage VDS –40 Gate-Source Voltage VGS
20 TC = 25C Continuous Drain Currentb TC = 100C Pulsed Drain Current –40 A Maximum Power Dissipationb –150 IS TC = 25C TA = 25C Operating Junction and Storage Temperature Range V –50 ID IDM Continuous Source Current (Diode Conduction) Unit –50 100b PD W 3a TJ, Tstg C –55 to 175      Parameter Maximum Junction-to-Ambienta Symbol t  10 sec. Steady State Maximum Junction-to-Case RthJA RthJC Typical Maximum 15 18 40 50 1.2 1.5 Unit C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See SOA curve for voltage derating. Document Number: 71176 S-00830—Rev. A, 24-Apr-00 www.vishay.com
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Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = –250 mA –40 VGS(th) VDS = VGS, ID = –250 mA –1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = –40 V, VGS = 0 V –1 VDS = –40 V, VGS = 0 V, TJ = 125C –50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = –5 V, VGS = –10 V V –120 VGS = –10 V, ID = –30 A a Drain-Source On-State Resistance D i S O S R i rDS(on) Forward Transconductancea gfs VGS = –10 V, ID = –30 A, TJ = 125C VDS = –15 V, ID = –30 A mA A 0.012 0.015 0.024 VGS = –4.5 V, ID = –20 A nA 0.018 W 0.023 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 5400 VGS = 0 V, VDS = –25 V, f = 1 MHz pF F 640 300 Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) 15 25 tr 380 580 75 115 140 210 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 85 VDS = –20 V, VGS = –10 V, ID = –50 20 V 10 V 50 A 130 nC C 25 15 VDD = –20 20 V V,, RL = 0 0.4 4W ID ^ –50 50 A, A VGEN = –10 10 V V, RG = 2 2.5 5W tf ns Source-Drain Diode Ratings and Characteristic (TC = 25C) Pulsed Current ISM –150 A Diode Forward Voltagea VSD IF = –50 A, VGS = 0 V –1.2 –1.5 V trr IF = –50 A, di/dt = 100 A/ms 40 80 ns Source-Drain Reverse Recovery Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com
FaxBack 408-970-5600 2 Document Number: 71176 S-00830—Rev. A, 24-Apr-00 SUD50P04-15 New Product Vishay Siliconix           Output Characteristics Transfer Characteristics 250 100 7V VGS = 10, 9, 8 V TC = –55C 6V 200 80 I D – Drain Current (A) I D – Drain Current (A) 25C 150 5V 100 4V 50 125C 60 40 20 2, 3 V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 80 0.04 TC = –55C r DS(on) – On-Resistance ( Ω ) g fs – Transconductance (S) 25C 60 125C 40 20 0 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0 0 20 40 60 80 100 0 20 40 ID – Drain Current (A) 80 100 120 ID – Drain Current (A) Capacitance Gate Charge 8000 V GS – Gate-to-Source Voltage (V) 20 Ciss 6000 C – Capacitance (pF) 60 4000 2000 Coss Crss 0 VDS = 20 V ID = 50 A 16 12 8 4 0 0 5 10 15 20 25 VDS – Drain-to-Source Voltage (V) Document Number: 71176 S-00830—Rev. A, 24-Apr-00 30 0 40 80 120 160 Qg – Total Gate Charge (nC) www.vishay.com
FaxBack 408-970-5600 3 SUD50P04-15 New Product Vishay Siliconix         On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 150C TJ = 25C 10 0.5 0 –50 1 –25 0 25 50 75 100 125 150 175 0 TJ – Junction Temperature (C) 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V)     Safe Operating Area 60 500 50 100 I D – Drain Current (A) I D – Drain Current (A) Maximum Drain Current vs. Case Temperature 40 30 20 10 ms 100 ms Limited by rDS(on) 1 ms 10 10 ms 100 ms dc 1 TC = 25C Single Pulse 10 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 40C/W 0.05 Single Pulse 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 0.01 10–4 10–3 www.vishay.com
FaxBack 408-970-5600 4 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 30 Document Number: 71176 S-00830—Rev. A, 24-Apr-00 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1