SUD50P06-15-GE3

SUD50P06-15 Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A) 0.015 at VGS = - 10 V - 50d 0.020 at VGS = - 4.5 V - 50d • TrenchFET® Power MOSFET • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS TO-252 • Load Switch S G Drain Connected to Tab D G S Top View Ordering Information SUD50P06-15-GE3 (Lead (Pb)-free and Halogen-free) SUD50P06-15-T4-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Pulse Avalanche Energy TC = 25 °C Power Dissipation TA = 25 °C V - 50d ID - 27.5 IDM - 80 IAS - 50 EAS A 125 mJ 113c PD W 2.5b, c TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol t  10 s Junction-to-Ambientb Steady State RthJA RthJC Junction-to-Case Typical Maximum 15 18 40 50 0.82 1.1 Unit °C/W Notes: a. Duty cycle  1 %. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Package limited. Document Number: 68940 S12-2439 Rev. C, 15-Oct-12 For technical questions, contact: pmostechsupport@vishay.comm www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD50P06-15 Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage IDSS Zero Gate Voltage Drain Current On-State Drain Currenta ± 100 VDS = - 60 V, VGS = 0 V -1 VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 150 °C - 100 ID(on) VDS = -5 V, VGS = - 10 V - 50 VGS = - 10 V, ID = - 17 A Drain-Source On-State Resistancea RDS(on) -3 0.025 VGS = - 10 V, ID = - 50 A, TJ = 150 °C 0.028 Forward Transconductance VDS = - 15 V, ID = - 17 A µA 0.015 VGS = - 10 V, ID = - 50 A, TJ = 125 °C gfs nA A 0.012 VGS = - 4.5 V, ID = - 14 A a V  0.020 61 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 405 Total Gate Chargec Qg 110 c 4950 VGS = 0 V, VDS = - 25 V, f = 1 MHz Gate-Source Charge Qgs Gate-Drain Chargec Qgd 28 Turn-On Delay Timec td(on) 15 Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) VDS = - 30 V, VGS = - 10 V, ID = - 50 A VDD = - 30 V, RL = 0.6  ID  - 50 A, VGEN = - 10 V, RG = 6  tf Source-Drain Diode Ratings and Characteristics TC = 25 pF 480 165 nC 19 23 70 105 175 260 175 260 ns °Cb IS - 50 Pulsed Current ISM - 80 Forward Voltagea VSD IF = - 50 A, VGS = 0 V -1 - 1.6 V trr IF = - 50 A, dI/dt = 100 A/µs 45 70 ns Continuous Current Reverse Recovery Time A Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.comm Document Number: 68940 S12-2439 Rev. C, 15-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD50P06-15 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 80 VGS = 10 thru 4 V 70 70 60 I D - Drain Current (A) I D - Drain Current (A) 60 50 40 30 3V 20 50 40 30 TC = 125 ° C 20 10 25 ° C 10 - 55 °C 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) Output Characteristics 2.0 2.5 3.0 3.5 4.0 70 80 0.025 R DS(on) - On-Resistance (Ω) 25 °C TC = - 55 °C 80 125 °C 60 40 20 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 0.005 0.000 0 0 10 20 30 40 50 0 60 10 20 VGS - Gate-to-Source Voltage (V) 30 40 50 60 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 8000 10 VGS - Gate-to-Source Voltage (V) 7000 6000 C - Capacitance (pF) 1.5 Transfer Characteristics 100 g fs - Transconductance (S) 1.0 VGS - Gate-to-Source Voltage (V) Ciss 5000 4000 3000 2000 Coss 1000 Crss 0 0 VDS = 30 V ID = 50 A 8 6 4 2 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) 50 60 0 20 40 80 100 120 Qg - Total Gate Charge (nC) Capacitance Document Number: 68940 S12-2439 Rev. C, 15-Oct-12 60 For technical questions, contact: pmostechsupport@vishay.comm Gate Charge www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD50P06-15 Vishay Siliconix TYPICAL CHARACTERISTICS 100 VGS = 10 V ID = 17 A 1.8 I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 2.0 1.6 1.4 1.2 1.0 TJ = 150 °C TJ = 25 °C 10 0.8 0.6 - 50 1 - 25 0 25 50 75 100 125 0.0 150 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) 1.5 Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature THERMAL RATINGS (25 °C, unless otherwise noted) 100 60 Limited by R DS(on)* P(t) = 0.0001 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 BVDSS Limited 10 P(t) = 0.001 10 TC = 25 °C Single Pulse 0 0 25 50 75 100 125 TC - Case Temperature (°C) 150 1 0.1 P(t) = 0.01 P(t) = 0.1 P(t) = 1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Drain Current vs. Case Temperature Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68940. www.vishay.com 4 For technical questions, contact: pmostechsupport@vishay.comm Document Number: 68940 S12-2439 Rev. C, 15-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 Notes • Dimension L3 is for reference only. Revision: 16-May-16 Document Number: 71197 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000