SUD50P10-43L-E3

SUD50P10-43L Vishay Siliconix P-Channel 100-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.043 at VGS = - 10 V - 37 0.048 at VGS = - 4.5 V - 35 VDS (V) - 100 • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 54 nC RoHS COMPLIANT TO-252 S G Drain Connected to Tab G D S Top View D P-Channel MOSFET Ordering Information: SUD50P10-43L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 100 Gate-Source Voltage VGS ± 20 TC = 125 °C TA = 25 °C - 31a ID - 9.2b, c - 7.7b, c TA = 125 °C IDM Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C - 50a IS - 6.9b, c IAS - 35 EAS 61 mJ 136 95 PD W 8.3b, c 5.8b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A - 40 TC = 25 °C Maximum Power Dissipation V - 37.1a TC = 25 °C Continuous Drain Current (TJ = 175 °C)b Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case (Drain) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 40 °C/W. Document Number: 73444 S09-1398-Rev. C, 20-Jul-09 Symbol t ≤ 10 s Steady State RthJA RthJC Typical Maximum Unit 15 40 0.85 18 50 1.1 °C/W www.vishay.com 1 SUD50P10-43L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 100 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V - 109 mV/°C 5.9 -1 -3 V ± 100 nA VDS = - 100 V, VGS = 0 V -1 VDS = - 100 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≥ 5 V, VGS = - 10 V - 40 µA A VGS = - 10 V, ID = - 9.2 A 0.036 0.043 VGS = - 4.5 V, ID = - 7.7 A 0.040 0.048 VDS = - 15 V, ID = - 9.2 A 38 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 4600 VDS = - 50 V, VGS = 0 V, f = 1 MHz VDS = - 50 V, VGS = - 10 V, ID = - 9.2 A VDS = - 50 V, VGS = - 4.5 V, ID = - 9.2 A td(off) f = 1 MHz VDD = - 50 V, RL = 6.5 Ω ID ≅ - 7.7 A, VGEN = - 10 V, Rg = 1 Ω tf td(on) tr td(off) 106 160 54 81 14 nC 26 td(on) tr pF 230 175 VDD = - 50 V, RL = 6.5 Ω ID ≅ - 7.7 A, VGEN = - 4.5 V, Rg = 1 Ω tf Ω 4 15 25 20 30 110 165 100 150 42 65 160 240 100 150 100 150 ns ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 50 - 40 IS = - 7.7 A IF = - 7.7 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 60 90 ns 150 225 nC 46 14 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73444 S09-1398-Rev. C, 20-Jul-09 SUD50P10-43L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 20 35 VGS = 10 V thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 30 25 20 15 12 8 TA = 125 °C 10 3V 4 25 °C 5 0 0.0 - 55 °C 2V 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.044 7000 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 6000 0.042 VGS = 4.5 V 0.040 0.038 VGS = 10 V 5000 Ciss 4000 3000 2000 0.036 1000 0.034 Coss Crss 0 0 5 10 15 20 25 30 35 0 10 ID - Drain Current (A) 20 40 50 60 70 80 125 150 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 2.3 ID = 9.2 A ID = 9.2 A 2.0 8 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 30 VDS = 50 V 6 VDS = 80 V 4 2 1.7 VGS = 10 V, 4.5 V 1.4 1.1 0.8 0 0 20 40 60 80 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73444 S09-1398-Rev. C, 20-Jul-09 100 120 0.5 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 SUD50P10-43L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.08 R DS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 40 TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.07 TA = 125 °C 0.06 0.05 0.04 TA = 25 °C 0.03 0.02 0.2 0.4 0.6 0.8 1.0 2 1.2 3 4 VSD - Source-to-Drain Voltage (V) 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.4 35 2.2 30 2.0 25 Power (W) VGS(th) (V) ID = 250 µA 1.8 1.6 1.4 15 10 1.2 5 1.0 0.8 - 50 20 - 25 0 25 50 75 100 125 150 0 0.01 175 0.1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 100 100 µs Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s DC 0.01 TA = 25 °C Single Pulse BVDSS Limited 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73444 S09-1398-Rev. C, 20-Jul-09 SUD50P10-43L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 140 50 120 100 30 Power ID - Drain Current (A) 40 20 80 60 40 10 20 0 0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Single Pulse Power, Junction-to-Ambient 175 IC - Peak Avalanche Current (A) 100 10 TA L IA BV - V DD 1 0.000001 0.00001 0.0001 0.001 0.01 TA - Time In Avalanche (s) Single Pulse Avalance Capability * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73444 S09-1398-Rev. C, 20-Jul-09 www.vishay.com 5 SUD50P10-43L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-2 4. Surface Mounted 10-1 1 10 Square Wave Pulse Duration (s) 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73444. www.vishay.com 6 Document Number: 73444 S09-1398-Rev. C, 20-Jul-09 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 Notes • Dimension L3 is for reference only. Revision: 16-May-16 Document Number: 71197 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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