SUD50P10-43L
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Vishay Siliconix
P-Channel 100 V (D-S) 175 °C MOSFET
FEATURES
DPAK ((TO-252)
• TrenchFET® Power MOSFET
Drain connected to tab
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
D
S
G
Top View
PRODUCT SUMMARY
G
VDS (V)
-100
RDS(on) max. () at VGS = -10 V
0.043
RDS(on) max. () at VGS = -4.5 V
0.048
Qg typ. (nC)
ID (A) a
Configuration
D
P-Channel MOSFET
54
-37
Single
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and halogen-free
SUD50P10-43L-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
-100
Gate-source voltage
VGS
± 20
Continuous drain current (TJ = 175 °C) b
TA = 25 °C
-31 a
ID
-9.2 b, c
-7.7 b, c
TA = 125 °C
Pulsed drain current
Continuous source current (diode conduction)
Avalanche current
Single pulse avalanche energy
IDM
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 70 °C
TA = 25 °C
-50 a
IS
-6.9 b, c
IAS
-35
EAS
61
mJ
136
95
PD
W
8.3 b, c
5.8 b, c
TA = 70 °C
Operating junction and storage temperature range
A
-40
TC = 25 °C
Maximum power dissipation
V
-37.1 a
TC = 25 °C
TC = 125 °C
UNIT
TJ, Tstg
-55 to +175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient a
Junction-to-case (drain)
SYMBOL
t 10 s
Steady state
RthJA
RthJC
TYPICAL
MAXIMUM
15
18
40
50
0.85
1.1
UNIT
°C/W
Note
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. Maximum under steady state conditions is 40 °C/W
S09-1398-Rev. C, 20-July.2009
Document Number: 73444
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
VDS
VGS = 0 V, ID = -250 μA
-100
TYP.
MAX.
UNIT
V
Static
Drain-source breakdown voltage
VDS temperature coefficient
VDS/TJ
ID = -250 μA
-
-
-109
-
-
5.9
-
mV/°C
VGS(th) temperature coefficient
VGS(th)/TJ
Gate-source threshold voltage
VGS(th)
VDS = VGS, ID = -250 μA
-1
-
-3
V
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
VDS = -100 V, VGS = 0 V
-
-
-1
VDS = -100 V, VGS = 0 V, TJ = 55 °C
-
-
-10
Gate-source leakage
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
μA
VDS 5 V, VGS = -10 V
-40
-
-
A
VGS = -10 V, ID = -9.2 A
-
0.036
0.043
VGS = -4.5 V, ID = -7.7 A
-
0.040
0.048
VDS = -15 V, ID = -9.2 A
-
38
-
-
4600
-
-
230
-
-
175
-
-
106
160
-
54
81
-
14
-
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDS = -50 V, VGS = 0 V, f = 1 MHz
VDS = -50 V, VGS = -10 V, ID = -9.2 A
VDS = -50 V, VGS = -4.5 V, ID = -9.2 A
-
26
-
f = 1 MHz
-
4
-
-
15
25
VDD = -50 V, RL = 6.5
ID -7.7 A, VGEN = - 10 V, Rg = 1
-
20
30
-
110
165
tf
-
100
150
td(on)
-
42
65
-
160
240
-
100
150
-
100
150
td(on)
tr
td(off)
tr
td(off)
VDD = -50 V, RL = 6.5
ID -7.7 A, VGEN = -4.5 V, Rg = 1
tf
pF
nC
ns
ns
Drain-source body diode characteristics
Continuous source-drain diode current
IS
Pulse diode forward current a
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = - 7.7 A
IF = -7.7 A, dI/dt = 100 A/μs, TJ = 25 °C
-
-
-50
-
-
-40
-
-0.8
-1.2
V
-
60
90
ns
-
150
225
nC
-
46
-
-
14
-
A
ns
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S09-1398-Rev. C, 20-July.2009
Document Number: 73444
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For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50P10-43L
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
20
35
VGS = 10 V thru 4 V
16
I D - Drain Current (A)
I D - Drain Current (A)
30
25
20
15
12
8
TA = 125 °C
10
3V
4
25 °C
5
0
0.0
- 55 °C
2V
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
0
0.0
3.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
7000
0.044
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
6000
0.042
VGS = 4.5 V
0.040
0.038
VGS = 10 V
5000
Ciss
4000
3000
2000
0.036
1000
0.034
Coss
Crss
0
0
5
10
15
20
25
30
35
0
10
ID - Drain Current (A)
20
40
50
60
70
80
125
150
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
2.3
10
ID = 9.2 A
R DS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
30
VDS - Drain-to-Source Voltage (V)
8
VDS = 50 V
6
VDS = 80 V
4
2
0
0
20
40
60
80
Qg - Total Gate Charge (nC)
Gate Charge
S09-1398-Rev. C, 20-July.2009
100
120
ID = 9.2 A
2.0
1.7
VGS = 10 V, 4.5 V
1.4
1.1
0.8
0.5
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73444
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50P10-43L
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.08
R DS(on) - Drain-to-Source On-Resistance (Ω)
I S - Source Current (A)
40
TJ = 150 °C
10
TJ = 25 °C
0.07
TA = 125 °C
0.06
0.05
0.04
0.03
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
2
1.2
3
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.4
35
2.2
30
2.0
25
ID = 250 µA
1.8
Power (W)
VGS(th) (V)
TA = 25 °C
1.6
20
15
1.4
10
1.2
5
1.0
0.8
- 50
- 25
0
25
50
75
100
125
150
0
0.01
175
0.1
1
10
100
1000
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
100 µs
Limited by RDS(on)*
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
DC
0.01
TA = 25 °C
Single Pulse
BVDSS Limited
0.001
0.1
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S09-1398-Rev. C, 20-July.2009
Document Number: 73444
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50P10-43L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
IC - Peak Avalanche Current (A)
100
ID - Drain Current (A)
40
30
20
10
25
50
75
100
125
150
175
0.00001
0.0001
0.001
Current Derating a
Single Pulse Avalance Capability
100
Power
IA
TA - Time In Avalanche (s)
120
80
60
40
20
0
50
L
BV - V DD
TC - Case Temperature (°C)
140
25
TA
1
0.000001
0
0
10
75
100
125
150
175
TC - Case Temperature (°C)
0.01
Single Pulse Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S09-1398-Rev. C, 20-July.2009
Document Number: 73444
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUD50P10-43L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 65 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-2
4. Surface Mounted
10-1
1
10
Square Wave Pulse Duration (s)
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73444.
S09-1398-Rev. C, 20-July.2009
Document Number: 73444
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-252AA Case Outline
VERSION 1: FACILITY CODE = Y
E
A
C2
H
D
D1
L3
b3
e
b2
e1
L
gage plane height (0.5 mm)
L4
b
L5
E1
C
A1
MILLIMETERS
DIM.
MIN.
A
2.18
MAX.
2.38
A1
-
0.127
b
0.64
0.88
b2
0.76
1.14
b3
4.95
5.46
C
0.46
0.61
C2
0.46
0.89
D
5.97
6.22
D1
4.10
-
E
6.35
6.73
E1
4.32
-
H
9.40
10.41
e
2.28 BSC
e1
4.56 BSC
L
1.40
1.78
L3
0.89
1.27
L4
-
1.02
L5
1.01
1.52
Note
• Dimension L3 is for reference only
Revision: 03-Oct-2022
Document Number: 71197
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
VERSION 2: FACILITY CODE = N
E
e
A
b3
E1
E1/2
c2
θ
e
L4
L5
L6
H
D
L3
D1
θ
0.25
(3°)
DETAIL "B"
C A B
(3°)
DETAIL "B"
A1
C
L
(L1)
b1
SEATING
C
PLANE
θ
L2
GAUGE
PLANE
H
C
(b)
c1
3x b
2x e
c
2x b2
MILLIMETERS
MILLIMETERS
DIM.
A
MIN.
2.18
MAX.
DIM.
MIN.
2.39
L
1.50
A1
-
0.13
L1
b
0.65
0.89
L2
MAX.
1.78
2.74 ref.
0.51 BSC
b1
0.64
0.79
L3
b2
0.76
1.13
L4
-
1.02
b3
4.95
5.46
L5
1.14
1.49
c
0.46
0.61
L6
0.65
0.85
c1
0.41
0.56
0°
10°
1
0°
15°
2
25°
35°
c2
0.46
0.60
D
5.97
6.22
D1
5.21
-
E
6.35
6.73
E1
4.32
e
H
2.29 BSC
9.94
0.89
1.27
Notes
• Dimensioning and tolerance confirm to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
• Heat sink side flash is max. 0.8 mm
• Radius on terminal is optional
10.34
ECN: E22-0399-Rev. R, 03-Oct-2022
DWG: 5347
Revision: 03-Oct-2022
Document Number: 71197
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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Revision: 01-Jan-2022
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Document Number: 91000
