SUG80050E-GE3

SUG80050E www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) 175 °C MOSFET FEATURES TO-247 • ThunderFET® power MOSFET • Low RDS - Qg figure-of-merit (FOM) • Maximum 175 °C junction temperature • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S APPLICATIONS D Top Vi T View D • Synchronous rectification G • Power supplies • DC/AC inverter PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V 0.0054 RDS(on) max. (Ω) at VGS = 7.5 V 0.0060 Qg typ. (nC) • DC/DC converter 150 G • Solar micro inverter • Motor drive switch N-Channel MOSFET 110 ID (A) 100 d Configuration Single S ORDERING INFORMATION Package TO-247 Lead (Pb)-free and halogen-free SUG80050E-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 150 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C TC = 125 °C Pulsed drain current (t = 100 μs) Continuous source-drain diode current Single pulse avalanche current a L = 0.1 mH Single pulse avalanche energy a Maximum power dissipation TC = 25 °C TC = 125 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) ID 100 d 300 IS 100 d IAS 100 PD TJ, Tstg c V 100 d IDM EAS UNIT 500 500 b 167 b -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient (PCB mount) c Maximum junction-to-case (drain) Steady state SYMBOL MAXIMUM RthJA 40 RthJC 0.3 UNIT °C/W Notes a. Duty cycle ≤ 1 % b. See SOA curve for voltage derating c. When mounted on 1" square PCB (FR4 material) d. Package limited S17-1206-Rev. B, 26-Jul-17 Document Number: 75186 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUG80050E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 150 - - VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - 250 nA VDS = 150 V, VGS = 0 V - - 1 Zero gate voltage drain current IDSS VDS = 150 V, VGS = 0 V, TJ = 125 °C - - 150 On-state drain current a ID(on) Gate-source threshold voltage Drain-source on-state resistance a Forward transconductance a RDS(on) gfs μA VDS = 150 V, VGS = 0 V, TJ = 175 °C - - 5 mA VDS ≥ 10 V, VGS = 10 V 30 - - A VGS = 10 V, ID = 20 A - 0.0045 0.0054 VGS = 7.5 V, ID = 15 A - 0.0050 0.0063 VDS = 15 V, ID = 20 A - 60 - - 6250 - - 1100 - - 65 - Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg VDS = 75 V, VGS = 0 V, f = 1 MHz pF - 110 165 VDS = 75 V, VGS =10 V, ID = 20 A - 33 - - 28 - f = 1 MHz 0.6 3.1 6.2 - 18 27 - 44 66 - 72 108 tf - 55 83 Pulse diode forward current (t = 100 μs) ISM - - 100 Body diode voltage VSD - 0.85 1.5 V - 130 195 ns - 0.71 1.07 μC - 97 - Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDD = 75 V, RL = 5 Ω, ID ≅ 15 A, VGEN = 10 V, Rg = 1 Ω nC Ω ns Drain-Source Body Diode Characteristics Body diode reverse recovery time trr IF = 15 A, VGS = 0 V Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb - 33 - IRM(REC) - 12 18 Body diode peak reverse recovery charge IF = 15 A, dI/dt = 100 A/μs A ns A Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1206-Rev. B, 26-Jul-17 Document Number: 75186 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUG80050E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 100 10000 10000 VGS = 10 V thru 6 V 40 VGS = 5 V 100 1000 60 1st line 2nd line 1000 60 2nd line ID - Drain Current (A) 80 1st line 2nd line 2nd line ID - Drain Current (A) 80 40 100 TC = 25 °C 20 20 TC = 125 °C 0 1 2 3 4 10 5 0 2 4 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title Axis Title 15 000 0.006 1000 1st line 2nd line VGS = 7.5 V 0.005 100 VGS = 10 V 2nd line C - Capacitance (pF) 10000 0.007 2nd line RDS(on) - On-Resistance (Ω) 6 10000 12 000 0.004 1000 9000 1st line 2nd line 0 TC = -55 °C 0 10 Ciss 6000 100 Coss 3000 Crss 0.003 10 20 40 60 80 0 10 0 100 40 60 80 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 10000 1000 1st line 2nd line 6 VDS = 120 V 4 100 2 0 10 0 30 60 90 Qg - Total Gate Charge (nC) 2nd line Gate Charge S17-1206-Rev. B, 26-Jul-17 120 2nd line RDS(on) - On-Resistance (Normalized) 8 VDS = 38 V 10000 2.4 VDS = 75 V ID = 20 A 100 Axis Title 10 2nd line VGS - Gate-to-Source Voltage (V) 20 VGS = 10 V, ID = 20 A 1.9 1000 1st line 2nd line 0 1.4 VGS = 7.5 V, ID = 15 A 100 0.9 0.4 -50 -25 0 25 50 75 100 125 150 17510 TJ - Junction Temperature (°C) 2nd line On-Resistance vs. Junction Temperature Document Number: 75186 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUG80050E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 0.020 10000 10000 TJ = 150 °C 1000 1 1st line 2nd line 2nd line IS - Source Current (A) 10 TJ = 25 °C 0.1 100 0.01 0.001 0.015 1000 0.010 0.2 0.4 0.6 0.8 1.0 TJ = 150 °C 100 TJ = 25 °C 0.005 0 10 0 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID = 20 A 1.2 10 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 3.6 10000 80 10000 TC = -55 °C 2.6 2.1 100 1.6 1.1 0 25 50 TC = 25 °C 1000 40 TC = 125 °C 100 20 0 10 -50 -25 60 1st line 2nd line 1000 1st line 2nd line 2nd line VGS(th) (V) 2nd line gfs - Transconductance (S) ID = 250 μA 3.1 75 100 125 150 175 10 0 5 10 15 TJ - Temperature (°C) 2nd line ID - Drain Current (A) 2nd line Threshold Voltage Transconductance 20 25 Axis Title 1000 10000 IDM limited 1000 1 ms 10 10 ms DC, 10 s, 1 s, 100 ms 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 Limited by RDS(on) (1) 100 0.1 TC = 25 °C Single pulse BVDSS limited 0.01 0.1 (1) 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-1206-Rev. B, 26-Jul-17 Document Number: 75186 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUG80050E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 165 1000 1st line 2nd line 2nd line ID - Drain Current (A) 220 110 100 55 0 10 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) 2nd line Current Derating a Axis Title ID = 10 mA 190 180 175 2nd line IDAV (A) 1000 185 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 1000 10000 195 100 25 °C 150 °C 100 170 165 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature 10 0.00001 0.0001 0.001 0.01 Time (s) 2nd line IDAV vs. Time Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S17-1206-Rev. B, 26-Jul-17 Document Number: 75186 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUG80050E www.vishay.com Vishay Siliconix Normalized Effective Transient Thermal Impedance TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Pulse Time (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75186. S17-1206-Rev. B, 26-Jul-17 Document Number: 75186 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-247AC (High Voltage) VERSION 1: FACILITY CODE = 9 MILLIMETERS DIM. MIN. MAX. A 4.83 A1 2.29 MILLIMETERS NOTES DIM. MIN. MAX. NOTES 5.21 D1 16.25 16.85 5 2.55 D2 0.56 0.76 A2 1.50 2.49 E 15.50 15.87 b 1.12 1.33 E1 13.46 14.16 5 b1 1.12 1.28 E2 4.52 5.49 3 b2 1.91 2.39 b3 1.91 2.34 b4 2.87 3.22 b5 2.87 3.18 c 0.55 0.69 c1 0.55 0.65 D 20.40 20.70 4 6 e L 14.90 15.40 6, 8 L1 3.96 4.16 6 ØP 3.56 3.65 7 6 4 5.44 BSC Ø P1 7.19 ref. Q 5.31 5.69 S 5.54 5.74 Notes (1) Package reference: JEDEC® TO247, variation AC (2) All dimensions are in mm (3) Slot required, notch may be rounded (4) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body (5) Thermal pad contour optional with dimensions D1 and E1 (6) Lead finish uncontrolled in L1 (7) Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm (8) Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition Revision: 19-Oct-2020 Document Number: 91360 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix VERSION 2: FACILITY CODE = Y A A 4 E B 3 R/2 E/2 7 ØP Ø k M DBM A2 S (Datum B) ØP1 A D2 Q 4 4 2xR (2) D1 D 1 2 4 D 3 Thermal pad 5 L1 C L See view B 2 x b2 3xb 0.10 M C A M 4 E1 A 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Planting Lead Assignments 1. Gate 2. Drain 3. Source 4. Drain D DE Base metal E C (c) C c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS DIM. MIN. MAX. A 4.58 5.31 MILLIMETERS NOTES DIM. MIN. MAX. D2 0.51 1.30 15.87 A1 2.21 2.59 E 15.29 A2 1.17 2.49 E1 13.72 b 0.99 1.40 e 5.46 BSC b1 0.99 1.35 Øk b2 1.53 2.39 L 14.20 16.25 b3 1.65 2.37 L1 3.71 4.29 b4 2.42 3.43 ØP 3.51 3.66 b5 2.59 3.38 Ø P1 - 7.39 c 0.38 0.86 Q 5.31 5.69 4.52 c1 0.38 0.76 R D 19.71 20.82 S D1 13.08 - NOTES 0.254 5.49 5.51 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 19-Oct-2020 Document Number: 91360 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix VERSION 3: FACILITY CODE = N A E R/2 D2 B A P A2 D1 L1 D D K M D BM R S Q N P1 b2 L C e b b4 C E1 A1 0.01 M D B M 0.10 M C A M b1, b3, b5 c c1 Base metal Plating b, b2, b4 MILLIMETERS MILLIMETERS DIM. MIN. MAX. DIM. MIN. A 4.65 5.31 D2 0.51 MAX. 1.35 A1 2.21 2.59 E 15.29 15.87 13.46 A2 1.17 1.37 E1 b 0.99 1.40 e - b1 0.99 1.35 k b2 1.65 2.39 L 14.20 b3 1.65 2.34 L1 3.71 b4 2.59 3.43 N b5 2.59 3.38 P 3.56 c 0.38 0.89 P1 - 7.39 c1 0.38 0.84 Q 5.31 5.69 D 19.71 20.70 R 4.52 D1 13.08 - S 5.46 BSC 0.254 16.10 4.29 7.62 BSC 3.66 5.49 5.51 BSC ECN: E20-0545-Rev. F, 19-Oct-2020 DWG: 5971 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") Revision: 19-Oct-2020 Document Number: 91360 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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