SUG90090E
www.vishay.com
Vishay Siliconix
N-Channel 200 V (D-S) 175 °C MOSFET
FEATURES
TO-247
• ThunderFET® power MOSFET
• Low RDS - Qg figure-of-merit (FOM)
• Maximum 175 °C junction temperature
• 100 % Rg and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
S
APPLICATIONS
D
Top Vi
T
View
D
• Synchronous rectification
G
• Power supplies
• DC/AC inverter
PRODUCT SUMMARY
VDS (V)
• DC/DC converter
200
RDS(on) max. (Ω) at VGS = 10 V
0.0095
RDS(on) max. (Ω) at VGS = 7.5 V
0.0104
Qg typ. (nC)
G
• Solar micro inverter
• Motor drive switch
S
N-Channel MOSFET
86
d
ID (A)
100
Configuration
Single
ORDERING INFORMATION
Package
TO-247
Lead (Pb)-free and halogen-free
SUG90090E-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
200
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C
TC = 125 °C
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
Single pulse avalanche current a
L = 0.1 mH
Single pulse avalanche energy a
Maximum power dissipation
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
ID
77.6
300
IS
100 d
IAS
100
PD
TJ, Tstg
c
V
100 d
IDM
EAS
UNIT
500
395 b
132 b
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient (PCB mount) c
Maximum junction-to-case (drain)
Steady state
SYMBOL
MAXIMUM
RthJA
40
RthJC
0.38
UNIT
°C/W
Notes
a. Duty cycle ≤ 1 %
b. See SOA curve for voltage derating
c. When mounted on 1" square PCB (FR4 material)
d. Package limited
S17-1131-Rev. B, 17-Jul-17
Document Number: 75009
1
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SUG90090E
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
Static
Drain-source breakdown voltage
VDS
VGS = 0 V, ID = 250 μA
200
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
V
Gate-source leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
250
nA
VDS = 200 V, VGS = 0 V
-
-
1
Zero gate voltage drain current
IDSS
VDS = 200 V, VGS = 0 V, TJ = 125 °C
-
-
150
On-state drain current a
ID(on)
Gate-source threshold voltage
Drain-source on-state resistance a
Forward transconductance a
RDS(on)
gfs
μA
VDS = 200 V, VGS = 0 V, TJ = 175 °C
-
-
5
mA
VDS ≥ 10 V, VGS = 10 V
30
-
-
A
VGS = 10 V, ID = 20 A
-
0.0079
0.0095
VGS = 7.5 V, ID = 15 A
-
0.0083
0.0104
VDS = 15 V, ID = 20 A
-
54
-
-
5220
-
-
495
-
-
51
-
Ω
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Rg
VDS = 100 V, VGS = 0 V, f = 1 MHz
pF
-
86
129
VDS = 100 V, VGS =10 V, ID = 20 A
-
23
-
-
22.7
-
f = 1 MHz
0.6
3.2
14.4
-
18
27
-
44
66
-
60
90
tf
-
40
60
Pulse diode forward current (t = 100 μs)
ISM
-
-
100
Body diode voltage
VSD
-
0.85
1.5
V
-
146
220
ns
-
0.91
1.37
μC
-
115
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
VDD = 100 V, RL = 6.7 Ω, ID ≅ 15 A,
VGEN = 10 V, Rg = 1 Ω
nC
Ω
ns
Drain-Source Body Diode Characteristics
Body diode reverse recovery time
trr
IF = 15 A, VGS = 0 V
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
-
31
-
IRM(REC)
-
12
18
Body diode peak reverse recovery charge
IF = 15 A, di/dt = 100 A/μs
A
ns
A
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1131-Rev. B, 17-Jul-17
Document Number: 75009
2
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
100
10000
10000
VGS = 10 V thru 6 V
40
VGS = 5 V
100
1000
60
1st line
2nd line
1000
60
2nd line
ID - Drain Current (A)
80
1st line
2nd line
2nd line
ID - Drain Current (A)
80
TC = 25 °C
40
100
20
20
TC = 125 °C
0
1
2
3
4
5
10
0
2
4
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
1000
100
VGS = 10 V
2nd line
C - Capacitance (pF)
0.012
VGS = 7.5 V
10000
12 000
10000
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
8
VDS - Drain-to-Source Voltage (V)
2nd line
0.015
0.009
6
9000
1000
6000
1st line
2nd line
0
TC = -55 °C
0
10
Ciss
100
3000
0.006
Coss
Crss
0.003
0
10
20
40
60
80
10
0
100
20
40
80
ID - Drain Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
10000
ID = 20 A
2.8
1000
1st line
2nd line
6
VDS = 160 V
4
100
2
0
10
30
45
60
Qg - Total Gate Charge (nC)
2nd line
Gate Charge
S17-1131-Rev. B, 17-Jul-17
75
90
2nd line
RDS(on) - On-Resistance (Normalized)
VDS = 50 V
15
10000
VDS = 100 V
8
0
100
Axis Title
10
2nd line
VGS - Gate-to-Source Voltage (V)
60
VGS = 10 V, ID = 20 A
2.2
1000
1st line
2nd line
0
1.6
VGS = 7.5 V, ID = 15 A
100
1.0
0.4
-50 -25
0
25
50
75 100 125 150 17510
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
Document Number: 75009
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
0.05
10000
10000
TJ = 150 °C
1000
1
1st line
2nd line
TJ = 25 °C
0.1
100
0.01
0.001
0.04
1000
0.03
0.02
100
0.2
0.4
0.6
0.8
1.0
TJ = 25 °C
0.01
0
10
0
TJ = 150 °C
10
4
1.2
5
6
7
9
10
VSD - Source-to-Drain Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
Axis Title
75
10000
3.7
2nd line
gfs - Transconductance (S)
1000
1st line
2nd line
2.9
2.5
100
2.1
1.7
10
-50 -25
0
25
50
10000
TC = -55 °C
ID = 250 μA
3.3
2nd line
VGS(th) (V)
8
60
TC = 25 °C
1000
45
1st line
2nd line
2nd line
IS - Source Current (A)
10
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID = 20 A
TC = 125 °C
30
100
15
0
75 100 125 150 175
10
0
5
10
15
TJ - Temperature (°C)
2nd line
ID - Drain Current (A)
2nd line
Threshold Voltage
Transconductance
20
25
Axis Title
1000
ID limited
1000
1 ms
10
10 ms
Limited by RDS(on) (1)
DC, 10 s,
1 s, 100 ms
1
1st line
2nd line
100
2nd line
ID - Drain Current (A)
10000
IDM limited
100
0.1
TC = 25 °C
Single pulse
BVDSS limited
0.01
0.1
(1)
1
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S17-1131-Rev. B, 17-Jul-17
Document Number: 75009
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUG90090E
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
150
10000
1000
90
1st line
2nd line
2nd line
ID - Drain Current (A)
120
60
100
30
0
10
0
25
50
75
100
125
150
175
TC - Case Temperature (°C)
2nd line
Current Derating a
Axis Title
ID = 10 mA
235
1000
225
25 °C
2nd line
IDAV (A)
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
100
10000
245
150 °C
100
215
205
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
10
0.00001
0.0001
0.001
Time (s)
2nd line
IDAV vs. Time
Note
a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S17-1131-Rev. B, 17-Jul-17
Document Number: 75009
5
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUG90090E
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (sec)
10
100
1K
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.01
0.02
0.001
Single pulse
0.0001
0.00001
0.0001
0.001
0.01
Pulse Time (s)
0.1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75009.
S17-1131-Rev. B, 17-Jul-17
Document Number: 75009
6
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9
MILLIMETERS
DIM.
MIN.
MAX.
A
4.83
A1
2.29
MILLIMETERS
NOTES
DIM.
MIN.
MAX.
NOTES
5.21
D1
16.25
16.85
5
2.55
D2
0.56
0.76
A2
1.50
2.49
E
15.50
15.87
b
1.12
1.33
E1
13.46
14.16
5
b1
1.12
1.28
E2
4.52
5.49
3
b2
1.91
2.39
b3
1.91
2.34
b4
2.87
3.22
b5
2.87
3.18
c
0.55
0.69
c1
0.55
0.65
D
20.40
20.70
4
6
e
L
14.90
15.40
6, 8
L1
3.96
4.16
6
ØP
3.56
3.65
7
6
4
5.44 BSC
Ø P1
7.19 ref.
Q
5.31
5.69
S
5.54
5.74
Notes
(1) Package reference: JEDEC® TO247, variation AC
(2) All dimensions are in mm
(3) Slot required, notch may be rounded
(4) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the
outermost extremes of the plastic body
(5) Thermal pad contour optional with dimensions D1 and E1
(6) Lead finish uncontrolled in L1
(7) Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
(8) Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4
dimension at maximum material condition
Revision: 19-Oct-2020
Document Number: 91360
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
VERSION 2: FACILITY CODE = Y
A
A
4
E
B
3 R/2
E/2
7 ØP
Ø k M DBM
A2
S
(Datum B)
ØP1
A
D2
Q
4
4
2xR
(2)
D1
D
1
2
4
D
3
Thermal pad
5 L1
C
L
See view B
2 x b2
3xb
0.10 M C A M
4
E1
A
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Planting
Lead Assignments
1. Gate
2. Drain
3. Source
4. Drain
D DE
Base metal
E
C
(c)
C
c1
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
DIM.
MIN.
MAX.
A
4.58
5.31
MILLIMETERS
NOTES
DIM.
MIN.
MAX.
D2
0.51
1.30
15.87
A1
2.21
2.59
E
15.29
A2
1.17
2.49
E1
13.72
b
0.99
1.40
e
5.46 BSC
b1
0.99
1.35
Øk
b2
1.53
2.39
L
14.20
16.25
b3
1.65
2.37
L1
3.71
4.29
b4
2.42
3.43
ØP
3.51
3.66
b5
2.59
3.38
Ø P1
-
7.39
c
0.38
0.86
Q
5.31
5.69
4.52
c1
0.38
0.76
R
D
19.71
20.82
S
D1
13.08
-
NOTES
0.254
5.49
5.51 BSC
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 19-Oct-2020
Document Number: 91360
2
For technical questions, contact: hvm@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
VERSION 3: FACILITY CODE = N
A
E
R/2
D2
B
A
P
A2
D1
L1
D
D
K M D BM
R
S
Q
N
P1
b2
L
C
e
b
b4
C
E1
A1
0.01 M D B M
0.10 M C A M
b1, b3, b5
c
c1
Base metal
Plating
b, b2, b4
MILLIMETERS
MILLIMETERS
DIM.
MIN.
MAX.
DIM.
MIN.
A
4.65
5.31
D2
0.51
MAX.
1.35
A1
2.21
2.59
E
15.29
15.87
13.46
A2
1.17
1.37
E1
b
0.99
1.40
e
-
b1
0.99
1.35
k
b2
1.65
2.39
L
14.20
b3
1.65
2.34
L1
3.71
b4
2.59
3.43
N
b5
2.59
3.38
P
3.56
c
0.38
0.89
P1
-
7.39
c1
0.38
0.84
Q
5.31
5.69
D
19.71
20.70
R
4.52
D1
13.08
-
S
5.46 BSC
0.254
16.10
4.29
7.62 BSC
3.66
5.49
5.51 BSC
ECN: E20-0545-Rev. F, 19-Oct-2020
DWG: 5971
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Revision: 19-Oct-2020
Document Number: 91360
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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