SUM09N20-270-E3

SUM09N20-270 Vishay Siliconix N-Channel 200 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.270 at VGS = 10 V 9 0.300 at VGS = 6 V 8.5 • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package • Compliant to RoHS Directive 2002/95/EC D TO-263 G G D S Top View S Ordering Information: SUM09N20-270-E3 (Lead (Pb) free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID IDM Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya L = 0.1 mH TC = 25 °C Maximum Power Dissipationa TA = 25 °Cc V 9 5.2 10 IAR 7 EAR 2.45 PD Unit 60b 3.75 A mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit Junction-to-Ambient (PCB Mount) RthJA 40 Junction-to-Case (Drain) RthJC 2.5 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter c °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 72158 S11-2308-Rev. B, 21-Nov-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM09N20-270 Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS 1 VDS = 160 V, VGS = 0 V, TJ = 125 °C 50 VDS = 160 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 5 A a Forward Transconductance ± 100 VDS = 160 V, VGS = 0 V ID(on) Drain-Source On-State Resistancea 4 RDS(on) gfs 10 V nA µA A 0.216 0.270 VGS = 10 V, ID = 5 A, TJ = 125 °C 0.54 VGS = 10 V, ID = 5 A, TJ = 175 °C 0.71 VGS = 6 V, ID = 5 A 0.240 VDS = 15 V, ID = 5 A 15 Ω 0.300 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg c 580 VGS = 0 V, VDS = 25 V, f = 1 MHz 30 11 Gate-Source Charge Qgs Gate-Drain Chargec Qgd 4 RG 4 Gate Resistance Turn-On Delay Time c Rise Timec Turn-Off Delay Timec Fall Timec VDS = 100 V, VGS = 10 V, ID = 10 A td(on) tr td(off) pF 75 VDD = 100 V, RL = 10 Ω ID ≅ 10 A, VGEN = 10 V, RG = 2.5 Ω tf 17 nC 2.7 Ω 10 15 35 55 25 40 40 60 ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b IS 9 Pulsed Current ISM 10 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge IF = 10 A, VGS = 0 V trr IRM(REC) Qrr IF = 10 A, dI/dt = 100 A/µs A 0.9 1.5 V 100 150 ns 5 8 A 0.25 0.6 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72158 S11-2308-Rev. B, 21-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM09N20-270 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless noted) 10 10 VGS = 10 thru 6 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 5V 6 4 2 6 4 TC = 125 °C 2 25 °C 4V - 55 °C 0 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 30 0.5 TC = - 55 °C RDS(on) - On-Resistance () g fs - Transconductance (S) 25 25 °C 20 125 °C 15 10 5 0 0.4 0.3 VGS = 6 V 0.2 VGS = 10 V 0.1 0.0 0 2 4 6 ID - Drain Current (A) 8 10 0 4 6 8 10 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 800 20 V GS - Gate-to-Source Voltage (V) 700 C - Capacitance (pF) 2 Ciss 600 500 400 300 200 Crss 100 Coss 0 VDS = 100 V ID = 10 A 16 12 8 4 0 0 40 80 120 160 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 72158 S11-2308-Rev. B, 21-Nov-11 200 0 4 8 12 16 Qg - Total Gate Charge (nC) 20 Gate Charge www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM09N20-270 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless noted) 100 2.5 VGS = 10 V ID = 5 A I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 3.0 2.0 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 0.6 0.9 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1.5 240 230 ID = 1.0 mA V DS (V) 220 210 200 190 180 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 Document Number: 72158 S11-2308-Rev. B, 21-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM09N20-270 Vishay Siliconix THERMAL RATINGS 100 10 I D - Drain Current (A) I D - Drain Current (A) 8 6 4 10 µs 10 100 µs Limited by R DS(on) * 1 ms 1 10 ms TC = 25 °C Single Pulse 2 DC, 100 ms 0 0 25 50 75 100 125 150 175 TC - Ambient Temperature (°C) 0.1 0.1 1 10 1000 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72158. Document Number: 72158 S11-2308-Rev. B, 21-Nov-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000