SUM110N03-03P-E3

SUM110N03-03P Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID D D D D (A)a 0.0026 @ VGS = 10 V 110a 0.004 @ VGS = 4.5 V 110a TrenchFETr Power MOSFET 175_C Junction Temperature Optimized for Low-Side Synchronous Rectifier 100% Rg Tested APPLICATIONS D Desktop or Server CPU Core D TO-263 DRAIN connected to TAB G G D S Top View Ordering Information: SUM110N03-03P SUM110N03-03P-E3 (Lead Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 175_C) TC = 100_C Pulsed Drain Current Limit VDS 30 VGS "20 ID IDM Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Symbol L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d Operating Junction and Storage Temperature Range V 110a 110a 400 IAR 65 EAR 211 PD Unit 375c 3.75 A mJ W TJ, Tstg −55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d J Junction-to-Ambient ti t A bi t Junction-to-Case Free Air (TO-220AB) 40 RthJA RthJC 62.5 _C/W C/W 0.4 Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71964 S-32523—Rev. B, 08-Dec-03 www.vishay.com 1 SUM110N03-03P Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1 2 3 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) VDS = 30 V, VGS = 0 V, TJ = 125_C 50 VDS = 30 V, VGS = 0 V, TJ = 175_C 250 VDS w 5 V, VGS = 10 V 120 VGS = 10 V, ID = 30 A Drain Source On-State Drain-Source On State Resistancea rDS(on) Forward Transconductancea gfs 0.002 mA m 0.0026 0.004 VGS = 10 V, ID = 30 A, TJ = 175_C 0.005 VDS = 15 V, ID = 30 A nA A VGS = 10 V, ID = 30 A, TJ = 125_C 0.0031 VGS = 4.5 V, ID = 20 A V W 0.004 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1250 Total Gate Chargeb Qg 172 Gate-Source Chargeb Qgs 40 Gate-Drain Chargeb Qgd Gate Resistance Rg Turn-On Delay Timeb Rise Timeb Turn-Off Delay Timeb Fall Timeb 12100 VDS = 15 V,, VGS = 10 V,, ID = 110 A tr pF 250 nC 22 0.3 td(on) td(off) 1910 VGS = 0 V, VDS = 25 V, f = 1 MHz VDD = 15 V, RL = 0.18 W ID ^ 110 A, VGEN = 10 V, Rg = 2.5 W tf 1.3 1.9 20 35 20 35 90 140 25 40 W ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)c Continuous Current IS 85 Pulsed Current ISM 440 Forward Voltagea VSD Reverse Recovery Time IF = 110 A, VGS = 0 V trr Peak Reverse Recovery Current IRM Reverse Recovery Charge Qrr IF = 85 A, di/dt = 100 A/ms m A 1.1 1.5 V 60 120 ns 3.5 5 A 0.1 0.3 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71964 S-32523—Rev. B, 08-Dec-03 SUM110N03-03P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 Transfer Characteristics 200 VGS = 10 thru 5 V 160 150 I D − Drain Current (A) I D − Drain Current (A) 200 4V 100 50 120 80 TC = 125_C 40 25_C 3V 0 0 2 4 6 8 0 10 0 VDS − Drain-to-Source Voltage (V) 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 250 0.0060 r DS(on) − On-Resistance ( W ) 200 g fs − Transconductance (S) −55_C 25_C TC = −55_C 150 125_C 100 50 0 0.0045 VGS = 4.5 V 0.0030 VGS = 10 V 0.0015 0.0000 0 10 20 30 40 50 60 70 80 0 90 20 40 ID − Drain Current (A) 80 100 120 150 180 ID − Drain Current (A) Capacitance 15000 60 Gate Charge 10 V GS − Gate-to-Source Voltage (V) Ciss C − Capacitance (pF) 12000 9000 6000 Coss 3000 Crss 0 VDS = 15 V ID = 85 A 8 6 4 2 0 0 6 12 18 24 VDS − Drain-to-Source Voltage (V) Document Number: 71964 S-32523—Rev. B, 08-Dec-03 30 0 30 60 90 120 Qg − Total Gate Charge (nC) www.vishay.com 3 SUM110N03-03P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 30 A 1.2 0.8 0.4 0.0 −50 Source-Drain Diode Forward Voltage 100 I S − Source Current (A) r DS(on) − On-Resistance (W) (Normalized) 2.0 −25 0 25 50 75 100 125 150 TJ = 150_C 10 TJ = 25_C 1 0 175 0.3 TJ − Junction Temperature (_C) V(BR)DSS (V) 0.9 1.2 VSD − Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature 40 38 0.6 ID = 10 mA 36 34 32 30 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) www.vishay.com 4 Document Number: 71964 S-32523—Rev. B, 08-Dec-03 SUM110N03-03P Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 I D − Drain Current (A) I D − Drain Current (A) 100 80 60 40 0 10 ms 100 ms dc 10 1 TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) TC − Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 10 ms 100 ms Limited by rDS(on) 1 ms 20 1 Safe Operating Area 1000 120 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 Square Wave Pulse Duration (sec) Document Number: 71964 S-32523—Rev. B, 08-Dec-03 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1